• Title/Summary/Keyword: metal foil substrate

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Fabrication of ZnO Nanorod based Robust Nanogenerator Metal Substrate (금속 기판적용을 통한 ZnO 나노로드기반 나노제너레이터 제조)

  • Baek, Seong-Ho;Park, Il-Kyu
    • Journal of Powder Materials
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    • v.22 no.5
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    • pp.331-336
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    • 2015
  • We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

The thermal annealing effect on electrical performances of a-Si:H TFT fabricated on a metal foil substrate

  • Han, Chang-Wook;Nam, Woo-Jin;Kim, Chang-Dong;Kim, Ki-Yong;Kang, In-Byeong;Chung, In-Jae;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.745-748
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    • 2007
  • Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were fabricated on a flexible metal substrate at $150\;^{\circ}C$. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at $230\;^{\circ}C$. The field effect mobility was reduced because of the strain in a- Si:H TFT under thermal annealing.

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Flexible Low Power Consumption Active-Matrix OLED Displays

  • Hack, Mike;Chwang, Anna;Hewitt, Richard;Brown, Julie;Lu, JengPing;Shih, ChinWen;Ho, JackSon;Street, R.A.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.609-613
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    • 2005
  • Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. In this paper we will outline our progress towards developing such a low power consumption active-matrix flexible OLED ($FOLED^{TM}$) display. Our work in this area is focused on three critical enabling technologies. The first is the development of a high efficiency long-lived phosphorescent OLED ($PHOLED{TM}$) device technology, which has now proven itself to be capable of meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active matrix backplanes, and for this our team are employing poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing. We also present progress in operational lifetime of encapsulated T-PHOLED pixels on planarized metal foil and discuss PHOLED encapsulation strategy.

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A substrate bias effect on the stability of a-Si:H TFT fabricated on a flexible metal substrate

  • Han, Chang-Wook;Nam, Woo-Jin;Kim, Chang-Dong;Kim, Ki-Yong;Kang, In-Byeong;Chung, In-Jae;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.257-260
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    • 2007
  • Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

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Silicon Thin-film Transistors on Flexible Foil Substrates

  • Wagner, Sigurd;Gleskova, Helena
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.263-267
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    • 2002
  • We are standing at the beginning of the industrialization of flexible thin-film transistor backplanes. An important group of candidates is based on silicon thin films made on metal or plastic foils. The main features of amorphous, nanocrystalline and microcrystalline silicon films for TFTs are summarized, and their compatibility with foil substrate materials is discussed.

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A study on burr generation of laser micro-hole drilling for copper foil (Copper 박막의 레이저 미세홀 가공이 버 생성에 관한 연구)

  • Oh J.Y.;Shin B.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.873-877
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    • 2005
  • The burr of micro drilling and micro cutting on thin metal film is a major obstacle to mass production for micro PCB boards in micro technologies of personal computing and telecom explosion. As the burr affects on the assembling process, it is necessary to study continuously on control or elimination of the burr. In order to get higher valued products, it is also needed to competitive techniques with the high resolution. In this paper, we studied experimentally the burr generation that when it is processed on the copper foil by laser in micro-hole machining. Unlike mechanical machining the burr produced on substrate is a resultants of melt and re-solidification of a melten metal which was heated and treated by laser. And higher laser energy increases the size of burr. Therefor in micro-drilling with laser, it is difficult to reduce the effects of burr for very thin metal sheets. We investigated the stale of the burr and analyzed the laser ablation Cu micro machining with respect to laser intensity and processing time.

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Full Color Top Emission AMOLED Displays on Flexible Metal Foil

  • Hack, Michael;Hewitt, Richard;Urbanik, Ken;Chwang, Anna;Brown, Julie J.;Lu, Jeng Ping;Shih, Chinwen;Ho, Jackson;Street, Bob;Ramos, Teresa;Rutherford, Nicole;Tognoni, Keith;Anderson, Bob;Huffman, Dave
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.305-308
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    • 2006
  • Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

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Improvement of PDMS graphene transfer method through surface modification of target substrate (폴리디메틸실록산(PDMS)을 이용한 그래핀 전사법 개선을 위한 계면처리 연구)

  • Han, Jae-Hyung;Choi, Mu-Han
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.2
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    • pp.232-239
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    • 2015
  • In this paper, we study the dry transfer technology utilizing PDMS (Polydimethylsiloxane) stamp of a large single-layer graphene grown on Cu-foil as catalytic metal by using Chemical Vapor Deposition (CVD). By changing the surface property of the target substrate through $UV/O_3$ treatment, we can transfer the graphene on the target substrate while minimizing mechanical damages of graphene layer. Multi-layer (1~4 layers) graphene was stacked on $SiO_2/Si$ wafer successfully by repeating thetransfer method/process and then optical transmittance and sheet resistance of graphene layers have been measured as a quality assessment.

Origin of Tearing Paths in Transferred Graphene by H2 Bubbling Process and Improved Transfer of Tear-Free Graphene Films U sing a Heat Press

  • Jinsung Kwak
    • Korean Journal of Materials Research
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    • v.32 no.12
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    • pp.522-527
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    • 2022
  • Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H2 bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H2 bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.