• 멤브레인
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• 제30권2호
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• pp.97-110
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• 2020

이산화탄소 포집 및 저장기술(CCS)은 인류발생적 요인에 의한 이산화탄소 배출 증가와 그로 인한 기후변화를 완화시킬 수 있는 기술 중 하나이다. 그 중, 매체 순환식 연소(chemical looping combustion, CLC)와 칼슘루핑(calcium looping) 기술은 현재 아민 스크러빙(amine scrubbing)을 대체할 수 있는 유망한 기술로 주목받고 있다. 두 방법 모두 금속 산화물을 이용한 연속적인 순환 사이클 반응에 의한 것이다. 전체적인 이산화탄소 포집 및 저장 성능의 향상을 위해서는 사이클을 거듭하며 발생하는 소결(sintering)로 인한 안정성 저하 문제를 해결하고 금속 산화물의 구조 또한 최적화해야 한다. 금속 산화물 표면에 얇은 박막을 형성하는 것은 소결로 인한 손상을 막을 수 있는 방법이다. 이러한 박막 제조 기술로 잘 알려진 기술에는 화학기상증착법(chemical vapor deposition)과 원자층증착기술(atomic layer deposition)이 있다. 본 총설에서는 CVD, ALD 기술을 비롯하여 효과적인 반응 안정성 향상을 위한 안정제 첨가 방법, 금속 산화물 구조 개선에 대한 다양한 최근 기술들을 다루었다.

• Current Photovoltaic Research
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• 제7권4호
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• pp.103-110
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• 2019

Cu(In,Ga)₃Se₅ (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu_1.05(In_0.59,Ga_0.41)3Se_y, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na₂S post deposition treatment. Our results indicate that Na₂S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.

• 한국산학기술학회논문지
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• 제16권12호
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• pp.8679-8683
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• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

• Korean Chemical Engineering Research
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• 제47권2호
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• pp.141-149
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• 2009

초고속 연산용 CMOS(complementary Metal Oxide Semiconductor) 배선재료로 사용되고 있는 구리(Cu)가, 기가급 메모리 소자용 금속 배선 물질에도 사용이 시작되면서 구리 박막에 대한 재료 및 공정이 새로운 조명을 받고 있다. 반도체 금속 배선에 사용하는 수 nm 두께의 구리 박막의 형성에 전해도금(electrodeposition)과 무전해 도금(electroless deposition) 같은 전기화학적 방법을 이용하게 되어서 표면 처리, 전해액 조성과 같은 중요한 요소에 대한 최신 연구 동향을 요약하였다. 구리 박막에서 구리 배선을 제작하여야 하므로 새로운 패턴 기술인 상감기법이 도입되어, 구리도금과 상감기법과의 공정 일치성 관점에서 전해도금과 무전해 도금의 요소 기술에 대해 기술하였다. 구리보다 비저항이 낮아 차세대 소자용 배선에 있어서 적용이 예상되는 은(Ag)을 전기화학적 방법으로 금속 배선에 적용하는 최신 연구에 대하여도 소개하였다.

• Progress in Superconductivity
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• 제11권2호
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• pp.100-105
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• 2010

Reel-to-reel deposition of $Y_2O_3$ has been performed on Ni-5%W metal substrates using the RF-sputtering method. The epitaxial orientation of $Y_2O_3$ buffer layers to the base bi-axially textured substrate was well identified using ${\theta}-2{\theta}$, out-of-plane ($\omega$), and in-plane ($\phi$) scans in X-ray diffraction analysis. The optimization of $Y_2O_3$ seed layers in reel-to-reel fashion were investigated varying the deposition temperature, sputtering power, and pressure for its significant roles for the following buffer stacks and superconducting layers. $Y_2O_3$ were all grown epitaxially on bi-axially textured metal substrates at 380 watts and 5 mTorr in the temperature range of $600-740^{\circ}C$ with higher $Y_2O_3$ (400) intensities at ${\sim}710^{\circ}C$. It was found that the $\Delta\omega$ values were $1-2^{\circ}$ lower but the $\Delta\phi$ values were above $1^{\circ}$ higher than that of Ni-W substrates. As the sputtering power increased from 340 to 380 watts, $\Delta\omega$ and $\Delta\phi$ values showed decreased tendency. Even in the small window of deposition pressure of 3-7 mTorr, the $Y_2O_3$ (400) intensities increased and $\Delta\omega$ and $\Delta\phi$ values were reduced as sputtering pressure increased.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.93-93
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• 2013

In recent years, multifunctional ternary nitride thin films have received extenstive attention due to its versatility in many applications. In particular, noble metal based ternary nitride thin films showed a promising properties in the application of Multifunctional heating resistor films because its good electrical properties and excellent resistance against oxidation and corrosion. In this study, we prepared multifunctional noble metal based ternary nitride thin films by atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) method. ALD and PEALD techniques were used due to their inherent merits such as a precise composition control and large area uniformity, which is very attractive for preparing multicomponent thin films on large area substrate. Here, we will demonstrate the design concept of multifunctional noble metal based ternary thin films. And, the relationship between microstructural evolution and electrical resistivity in noble metal based ternary thin films will be systemically presented. The useful properties of noble metal based ternary thin films including anti-corrosion and anti-oxidation will be discussed in terms of hybrid functionality.

• Journal of Welding and Joining
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• 제34권4호
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• pp.23-27
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• 2016

A 3D printed metal part and thermal plastic polymer part were joined by direct laser irradiation. The 3D metal part was fabricated by using DED(Direct Energy Deposition) with STS316 material. The experiment was carried out through no patterned metal surface, 3D metal printed surface and micro laser patterned surface. The most secure joining quality was obtained at the laser micro patterned surface specimen and the counterparts of polymers were PLA and PE based thermo plastics. The applied laser power was 350Watt and the distance of patterns was maintained at $150{\mu}m$. The laser line width was optimized at $450{\mu}m$ and the laser micro pattern depth was $180{\mu}m$ for the best joining quality. Based on the result analysis, the possibility of laser material joining for metal to polymer was proposed and multi-material joining will be possible in 3D laser direct material fabrication.

• 한국환경보건학회:학술대회논문집
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• 한국환경보건학회 2004년도 International Conference Global Environmental Problems and their Health Consequences
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• pp.92-106
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• 2004

Elemental dry deposition fluxes were measured using dry deposition plates from March to June 1998 in Seoul, Korea. During this spring sampling period several yellow sand events characterized by long-range transport from China and Mongolia impacted the area. Understanding the impact of yellow-sand events on atmospheric dry deposition is critical to managing the heavy metal levels in the environment in Korea. In this study, the measured flux of a primarily crustal metal, Al and an anthropogenic metal, Pb was used with two hybrid receptor models, potential source contribution function (PSCF) and residence time weighted concentration (RTWC) for locating sources of heavy metals associated with atmospheric dry deposition fluxes during the yellow-sand events in Seoul, Korea. The PSCF using a criterion value of the 75th percentile of the measured dry deposition fluxes and RTWC results using the measured elemental dry deposition fluxes agreed well and consistently showed that there were large potential source areas in the Gobi Desert in China and Mongolia and industrial areas near Tianjin, Tangshan, and Shenyang in China. Major industrial areas of Shenyang, Fushun, and Anshan, the Central China loess plateau, the Gobi Desert, and the Alaskan semi-desert in China were identified to be major source areas for the measured Pb flux in Seoul, Korea. For Al, the main industrial areas of Tangshan, Tianjin and Beijing, the Gobi Desert, the Alashan semi-desert, and the Central China loess plateau were found to be the major source areas. These results indicate that both anthropogenic sources such as industrial areas and natural sources such as deserts contribute to the high dry deposition fluxes of both Pb and Al in Seoul, Korea during yellow-sand events. RTWC resolved several high potential source areas. Modeling results indicated that the long-range transport of Al and Pb from China during yellow-sand events as well as non yellow-sand spring daytimes increased atmospheric dry deposition of heavy metals in Korea.

• 전기화학회지
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• 제19권3호
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• pp.57-62
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• 2016

The over-discharging phenomena in sodium-nickel chloride batteries were investigated in relation to decomposition of molten salt electrolyte and consequent metal co-deposition. From XRD analysis, the material deposited on graphite cathode current collector was revealed to be by-product of molten salt electrolyte decomposition. In particular, the result showed that the Ni-Al alloys ($Al_3Ni_2$, $Ni_3Al$ and $Al_3Ni$) were electrochemically deposited on graphite current collectors in line with over-discharging behaviors. It is assumed that the $NiCl_2$ solubility in molten salt electrolytes leads to the co-deposition of Ni-Al alloys by increasing metal deposition potential above 1.6 V (vs. $Na/Na^+$). The cell tests have revealed that the composition of molten salt electrolytes modified by various additives makes a decisive influence on the over-discharging behaviors of the cells. It was revealed that NaOCN addition to molten salt electrolytes was advantageous to suppress over-discharge reactions by modifying the characteristics of molten salt electrolytes. NaOCN addition into molten salt electrolytes seems to suppress Ni solubility by maintaining basic melts. The cell using modified molten salt electrolyte with NaOCN (Cell D) showed relatively less cell degradation compared with other cells for long cycles.