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Electrochemical Metallization Processes for Copper and Silver Metal Interconnection  

Kwon, Oh Joong (Department of Mechanical Engineering, University of Incheon)
Cho, Sung Ki (School of Chemical and Biological Engineering, Seoul National University)
Kim, Jae Jeong (School of Chemical and Biological Engineering, Seoul National University)
Publication Information
Korean Chemical Engineering Research / v.47, no.2, 2009 , pp. 141-149 More about this Journal
Abstract
The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.
Keywords
Copper; Silver; Electrodeposition; Electroless Deposition; Interconnection;
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