• Title/Summary/Keyword: memory process

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Research on User Data Leakage Prevention through Memory Initialization (메모리 초기화를 이용한 사용자 데이터 유출 방지에 관한 연구)

  • Yang, Dae-Yeop;Chung, Man-Hyun;Cho, Jae-Ik;Shon, Tae-Shik;Moon, Jong-Sub
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.49 no.7
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    • pp.71-79
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    • 2012
  • As advances in computer technology, dissemination of smartphones and tablet PCs has increased and digital media has become easily accessible. The performance of computer hardware is improved and the form of hardware is changed, but basically the change in mechanism was not occurred. Typically, the data used in the program is resident in memory during the operation because of the operating system efficiency. So, these data in memory is accessible through the memory dumps or real-time memory analysis. The user's personal information or confidential data may be leaked by exploiting data; thus, the countermeasures should be provided. In this paper, we proposed the method that minimizes user's data leakage through finding the physical memory address of the process using virtual memory address, and initializing memory data of the process.

A Case Study of a Navigator Optimization Process

  • Cho, Doosan
    • International journal of advanced smart convergence
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    • v.6 no.1
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    • pp.26-31
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    • 2017
  • When mobile navigator device accesses data randomly, the cache memory performance is rapidly deteriorated due to low memory access locality. For instance, GPS (General Positioning System) of navigator program for automobiles or drones, that are currently in common use, uses data from 32 satellites and computes current position of a receiver. This computation of positioning is the major part of GPS which accounts more than 50% computation in the program. In this computation task, the satellite signals are received in real time and stored in buffer memories. At this task, since necessary data cannot be sequentially stored, the data is read and used at random. This data accessing patterns are generated randomly, thus, memory system performance is worse by low data locality. As a result, it is difficult to process data in real time due to low data localization. Improving the low memory access locality inherited on the algorithms of conventional communication applications requires a certain optimization technique to solve this problem. In this study, we try to do optimizations with data and memory to improve the locality problem. In experiment, we show that our case study can improve processing speed of core computation and improve our overall system performance by 14%.

Implementation of the Shared Memory in the Dual Core System (Dual Core 시스템에서 Shared Memory 기능 구현)

  • Jang, Seung-Ju
    • The Journal of the Korea Contents Association
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    • v.8 no.9
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    • pp.27-33
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    • 2008
  • This paper designs Shared Memory on the Dual Core system so that it operates a general System V IPC on the Linux O.S. Shared Memory is the technique that many processes can access to identical memory area. We treat Shared Memory which is SVR in a kernel step. We design a share memory facility of Linux operating system on the Dual Core System. In this paper the suggesting of share memory facility design plan in Dual Core system is enhance the performance in existing an unity processor system as a dual core practical use. We attemp a performance enhance in each CPU for each process which uses a share memory.

WARP: Memory Subsystem Effective for Wrapping Bursts of a Cache

  • Jang, Wooyoung
    • ETRI Journal
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    • v.39 no.3
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    • pp.428-436
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    • 2017
  • State-of-the-art processors require increasingly complicated memory services for high performance and low power consumption. In particular, they request transfers within a burst in a wrap-around order to minimize the miss penalty of a cache. However, synchronous dynamic random access memories (SDRAMs) do not always generate transfers in the wrap-round order required by the processors. Thus, a memory subsystem rearranges the SDRAM transfers in the wrap-around order, but the rearrangement process may increase memory latency and waste the bandwidth of on-chip interconnects. In this paper, we present a memory subsystem that is effective for the wrapping bursts of a cache. The proposed memory subsystem makes SDRAMs generate transfers in an intermediate order, where the transfers are rearranged in the wrap-around order with minimal penalties. Then, the transfers are delivered with priority, depending on the program locality in space. Experimental results showed that the proposed memory subsystem minimizes the memory performance loss resulting from wrapping bursts and, thus, improves program execution time.

Regular File Access of Embedded System Using Flash Memory as a Storage (플래시 메모리를 저장매체로 사용하는 임베디드 시스템에서의 정규파일 접근)

  • 이은주;박현주
    • Journal of Information Technology Applications and Management
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    • v.11 no.1
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    • pp.189-200
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    • 2004
  • Recently Flash Memory which is small and low-powered is widely used as a storage of embedded system, because an embedded system requests portability and a fast response. To resolve a difference of access time between a storage and RAM, Linux is using disk caching which copies a part of file on disk into RAM. It is not also an exception on embedded system. A READ access-time of flash memory is similar to RAMs. So, when a process on an embedded system reads data, it is similar to the time to access cached data in RAM and to access directly data on a flash memory. On the embedded system using limited memory, using a disk cache is that wastes much time and memory spaces to manage it and can not reflects the characteristic of a flash memory. This paper proposes the regular file access of limited using a page cache in the file system based on a flash memory and reflects the characteristic of a flash memory. The proposed algorithm minimizes power consumption because access numbers of the RAM are reduced and doesn't waste a memory space because it accesses directly to a flash memory Therefore, the performance improvement of the system applying the proposed algorithm is expected.

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A Low Power Multi Level Oscillator Fabricated in $0.35{\mu}m$ Standard CMOS Process ($0.35{\mu}m$ 표준 CMOS 공정에서 제작된 저전력 다중 발진기)

  • Chai Yong-Yoong;Yoon Kwang-Yeol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.8
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    • pp.399-403
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    • 2006
  • An accurate constant output voltage provided by the analog memory cell may be used by the low power oscillator to generate an accurate low frequency output signal. This accurate low frequency output signal may be used to maintain long-term timing accuracy in host devices during sleep modes of operation when an external crystal is not available to provide a clock signal. Further, incorporation of the analog memory cell in the low power oscillator is fully implementable in a 0.35um Samsung standard CMOS process. Therefore, the analog memory cell incorporated into the low power oscillator avoids the previous problems in a oscillator by providing a temperature-stable, low power consumption, size-efficient method for generating an accurate reference clock signal that can be used to support long sleep mode operation.

Micro Electrochemical Machining Characteristics and Shape Memory Effect in Ni-Ti SMA (Ni-Ti SMA의 미세 전해가공특성과 형상기억효과)

  • 김동환;박규열
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.1
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    • pp.43-49
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    • 2003
  • In this study, micro electrochemical machining method was introduced for accomplishment the fabrication technology of functional parts and smart structures using the Ni-Ti shape memory alloy. From the experimental result, the micro part which has very fine surface could be achieved by use of micro electrochemical process with point electrode method. Concretely, the optimal performance of micro electrochemical process in Ni-Ti SMA was obtained at the condition of approximately 100% of current efficiency and high frequency pulse current. That is, much finer surface integrity and shape memory effect can be obtained at the same condition mentioned above.

A study on the programming conditions suppressing the lateral diffusion of charges for the SONOS two-bit memory (SONOS two-bit 메모리의 측면확산에 영향을 주는 programming 조건 연구)

  • Lee, Myung-Shik;An, Ho-Myung;Seo, Kwang-Yell;Koh, Jung-Hyuk;Kim, Byung-Cheul;Kim, Joo-Yeon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.117-120
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    • 2005
  • The SONOS devices have been fabricated by the conventional $0.35{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with NOR array. Two-bit operation using conventional process achieve the high density memory compare with other two-bit memory. Lateral diffusion phenomenon in the two-bit operation cause soft error in the memory. In this study, the programming conditions arc investigated in order to reduce lateral diffusion for two-bit operation of CSL-NOR type SONOS flash cell.

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Implementation of Impedance Matching Circuit for ATE (고속 ATE 시스템을 위한 임피던스 정합회로 구현)

  • Kim, Jong-Won;Seo, Yong-Bae;Lee, Yong-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.4 s.17
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    • pp.17-22
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    • 2006
  • In the manufacturing processes of semiconductor, test process is important for quality of products. In the manufacturing process of dynamic memory, memory test is more important. So, automatic test equipment(ATE) is used necessarily. But, according to increase of speed of dynamic memory operation, the rapid test equipment is needed. Impedance matching between ATE and dynamic memory is expected to be an important problem for making a rapid test equipment over 1Gbps. According to increase of speed, inner impedance of ATE also works on important parameter for test. This paper is about the method that is for impedance matching of inner impedance and coaxial cable occurring in manufacturing of ATE. We proved effects of inner impedance by electric theory and verified the method of impedance matching using computer simulation.

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Characteristics of Programming on Analog Memory Cell Fabricated in a 0.35$\mu{m}$Single Poly Standard CMOS Process (0.35$\mu{m}$ 싱글폴리 표준 CMOS 공정에서 제작된 아날로그 메모리 셀의 프로그래밍 특성)

  • 채용웅;정동진
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.53 no.6
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    • pp.425-432
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    • 2004
  • In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.