• Proceedings of the IEEK Conference
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• 2003.07d
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• pp.1283-1286
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• 2003

Human can update the memory with new information not forgetting acquired information in the memory. ART(Adaptive Resonance Theory) does not need to change all information. The methodology of ART is followed. The ART updates the memory with the new information that is unknown if it is similar with the memorized information. On the other hand, if it is unknown information the ART adds it to the memory not updating the memory with the new one. This paper shows that ART is able to classify sensory information of a certain object. When ART receives new information of the object as an input, it searches for the nearest thing among the acquired information in the memory. If it is revealed that new information of the object has similarity with the acquired object, the model is updated to reflect new information to the memory. When new object does not have similarity with the acquired object, the model register the object into new memory

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Korean Journal of Adult Nursing
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• v.18 no.3
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• pp.468-478
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• 2006

Purpose: The purpose of this study were to find out the degree of memory decline and to confirm its correlated factors in old adults. Method: The subjects consisted of 68 old adults over the age 65 who living in Busan. Data were collected by the interview method, using a structured questionnaire and the testing method on the memory performance. Results: The old adults' memory performances declined in tasks of immediately word recall, delayed word recall, and face recognition and increased slightly in word recognition over 2 years. However, there was only significant difference in delayed word recall task. The significant variables to predict memory decline were age, literacy, depression, locus, and strategy. Conclusion: The memory decline of old adults wasn't more serious problem than the perceived one. There needs to be some intervention programs to prevent memory decline for the elderly.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.5
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• pp.261-268
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• 2018

Phase Change Memory(PCM) with low power consumption and high integration attracts attention as a next generation nonvolatile memory replacing DRAM. However, there is a problem that PCM has long latency and high energy consumption due to the writing operation. The PCM & DRAM hybrid memory structure is a fruitful structure that can overcome the disadvantages of such PCM. However, the page replacement algorithm is important, because these structures use two memory of different characteristics. The purpose of this document is to effectively manage pages that can be referenced in memory, taking into account the characteristics of DRAM and PCM. In order to manage these pages, this paper proposes an page replacement algorithm based on frequently accessed and recently paged. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the energy-delay product by around 10%, compared with Clock-DWF and CLOCK-HM.

• International Journal of Internet, Broadcasting and Communication
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• v.9 no.1
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• pp.29-34
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• 2017

Over the past several decades, embedded system and flight control computer technologies have been evolved to meet the diverse needs of the mobile device market. Current embedded systems are at the heart of technologies that can take advantage of small-sized specialized hardware while still providing high-efficiency performance at low cost. One of these key technologies is multiple memory banks. For example, a dual memory bank can provide two times more memory bandwidth in the same memory space. This benefit take lower cost to provide the same bandwidth. However, there is still few software technologies to support the efficient use of multiple memory banks. In this study, we present a technique to efficiently exploit multiple memory banks by software support. Specifically, our technique use an interference graph to optimally allocate data to different memory banks by an optimizing compiler. As a result, the execution time can be improved upto 7% with the proposed technique.

• Proceedings of the KSR Conference
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• 2010.06a
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• pp.1068-1074
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• 2010

In high speed railway, event recorder is essential system for analyzing the cause of train accident. It stores train operation sent by train control system in safe memory unit. Crash protected memory, the safe memory unit for event recorder, keeps the stored contents from severe environment. For crash protected memory, we have designed the architecture of concrete enclosure and controller board. Proposed system provides large volume of memory capacity and fault tolerance architecture. For checking the characteristics of proposed crash protected memory specification, the simulation is executed. Simulation results shows the designed crash protected memory meets all requirements.

• IEMEK Journal of Embedded Systems and Applications
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• v.11 no.2
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• pp.57-65
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• 2016

In this paper, we propose a system for efficient use of shared memory between CPU and GPU. The system, called Fusion Architecture, assures consistency of the shared memory and minimizes cache misses that frequently occurs on Heterogeneous System Architecture or Unified Virtual Memory based systems. It also maximizes the performance for memory intensive jobs by efficient allocation of GPU cores. To test between architectures on various scenarios, we introduce the Fusion Architecture Analyzer, which compares OpenMP, OpenCL, CUDA, and the proposed architecture in terms of memory overhead and process time. As a result, Proposed fusion architectures show that the Fusion Architecture runs benchmarks 55% faster and reduces memory overheads by 220% in average.

• IEMEK Journal of Embedded Systems and Applications
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• v.5 no.2
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• pp.77-83
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• 2010

In this paper, we propose an efficient memory architecture for coeff_token encoding in H.264/AVC standard. The VLCTs used to encode the coeff_token syntax element are implemented with the memory. In general, the size of memory must be reduced because it affects the cost and operation speed of the system. Based on the analysis for the codewords in VLCTs, new memory architecture is designed in this paper. The proposed memory architecture results in about 24% memory saving, compared to the conventional memory architecture.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.