IEMEK Journal of Embedded Systems and Applications (대한임베디드공학회논문지)

Institute of Embedded Engineering of Korea (대한임베디드공학회)
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Active Page Replacement Policy for DRAM & PCM Hybrid Memory System

DRAM&PCM 하이브리드 메모리 시스템을 위한 능동적 페이지 교체 정책

  • Received : 2018.07.31
  • Accepted : 2018.10.02
  • Published : 2018.10.31
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Abstract

Phase Change Memory(PCM) with low power consumption and high integration attracts attention as a next generation nonvolatile memory replacing DRAM. However, there is a problem that PCM has long latency and high energy consumption due to the writing operation. The PCM & DRAM hybrid memory structure is a fruitful structure that can overcome the disadvantages of such PCM. However, the page replacement algorithm is important, because these structures use two memory of different characteristics. The purpose of this document is to effectively manage pages that can be referenced in memory, taking into account the characteristics of DRAM and PCM. In order to manage these pages, this paper proposes an page replacement algorithm based on frequently accessed and recently paged. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the energy-delay product by around 10%, compared with Clock-DWF and CLOCK-HM.

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References

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