Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Performance Improvement of Asynchronous Mass Memory Module Using Error Correction Code

에러 보정 코드를 이용한 비동기용 대용량 메모리 모듈의 성능 향상

  • Ahn, Jae Hyun (Semiconductor Engineering of Cheongju University) ;
  • Yang, Oh (Semiconductor Engineering of Cheongju University) ;
  • Yeon, Jun Sang (WOOJIN Industrial System Co. Ltd.)
  • 안재현 (청주대학교 반도체공학과) ;
  • 양오 (청주대학교 반도체공학과) ;
  • 연준상 (우진산전(주))
  • Received : 2020.09.17
  • Accepted : 2020.09.23
  • Published : 2020.09.30
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Abstract

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

Keywords

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