• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.658-660
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• 2004

In this paper, we have investigated electrical characteristics about doble gate MOSFET with changed oxide layer thickness of nam Sate and side gate, main gate and Si-substrate. We have known that optimum thickness of nam gate and side gate at 4nm, gate and Si-substrate at 3nm. We have applied for side gate voltage 3V, and drain voltage 1.5V. finally, we have known that importance of oxide layer thickness between main gate and Si-substrate better than main gate and side Sate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.777-779
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• 2003

In this paper, we have investigated Characteristics of C-V for Double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated characteristics of C-V and main gate voltage is changed from -5V to ＋5V. Also we have investigated characteristics of C-V for DG MOSFET when the side gate length is changed from 40nm to 90nm. As the side gate length is reduced, the transconductance is increased and the capacitance is reduced. When the side gate voltage is 3V, we know that C-V curves are bending at near the main gate voltage of 1.8V. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.490-493
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• 2002

In this study, we have investigated optimum value for side gate length and side gate voltage of double gate (DG) MOSFET with main gate and side gate. We know that optimum side gate voltage for each side length is about 3V. Also, we know that optimum side gate length for each main gate length is about 70nm. We have presented the transconductance and subthreshold slope for each side gate length. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.661-663
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• 2004

In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.693-695
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• 2003

In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.263-268
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• 2003

In this paper, we have investigated double gate (DG) MOSFET structure, which has main gate (NG) and two side gates (SG). We know that optimum side gate voltage for each side gate length is about 3V in the main gate 50nm. Also, we know that optimum side gate length for each for main gate length is about 70nm. DG MOSFET shows a small threshold voltage roll-off. From the I-V characteristics, we obtained IDsat=550$mutextrm{A}$/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V for DG MOSFET with the main gate length of 50nm and the side gate length of 70nm. The subthreshold slope is 86.2㎷/decade, transconductance is 114$mutextrm{A}$/${\mu}{\textrm}{m}$ and DIBL (Drain Induced Barrier Lowering) is 43.37㎷. Then, we have investigated the advantage of this structure for the application to multi-input NAND gate logic. Then, we have obtained very high cut-off frequency of 41.4GHz in the DG MOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.498-501
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• 2002

In this paper, we designed double gate(DG) MOSFET structure which has main gate(MG) and two side gates(SG). We have simulated using TCAD simulator. DG MOSFET have the main gate length of nm and the side gate length of 70nm. Then, we have investigated the pinch-off characteristics, drain voltage is changed from 0V to 1.5V at VMG=1.5V and VSG=3.0V. In spite of the LMG is very small, we have obtained a very good pinch-off characteristics. Therefore, we know that the DG structure is very useful at nino scale.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.7
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• pp.1074-1078
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• 2002

In this paper, we designed double gate(DG) MOSFET structure which has main gate(MG) and two side gates(SG). We have simulated using TCAD simulator U .WOSFET have the main gate length of %m and the side gate length of 70nm. Then, u'e have investigated the pinch-off characteristics, drain voltage is changed from 0V to 1.5V at VMG=1.5V and VSG=3.0V. In spite of the LMG is very small, we have obtained a very good pinch-off characteristics. Therefore, we know that the DG structure is very useful at nano scale.

• Korean Journal of Human Ecology
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• v.3 no.2
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• pp.39-46
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• 2000

This research was to identify housing identity expressed on entrance features In Korean single detached houses. The data were collected from field study and content analysis method of 45 houses in Chonju city. The methods of observation, of measuring the size, of sketching. and of Photos of entrance feature in the single detached houses were used for this study. Results of this study were as follows. First. the height and the form both of main gate and of wall tended to be closed. In particular. the size of main gate tended to be shown off rather than having practical funtion. whereas the form of main gate were semi-opened and thus could not guaranteed privacy of the residents very well. Second, 53.3% of the direction of main entrance were found to be at right-an91e0 with main gate, which reflected the control needs of private life. Third. the balance of main gate and exterior was homogeneous, which expressed the increase of aethetic concern of exterior Finally. most of entrance approach were made of stones and bricks. This result indicated that the practical funtion of entrance approach was emphasized the emotional environment was not considered in building the entrance approach.

• Proceeding of Spring/Autumn Annual Conference of KHA
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• 2003.11a
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• pp.301-306
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• 2003

The main gate of university is a symbolic role to grasp the its activities within a limited area. The form or shape is various at its circumstances such as activity type, region, etc. The study aimed at offering the information to grasp the fixed quantity to an university gate plan which analyzed a psychological judgment criteria according to form or shape characteristics of the university main gate. It selected ten universities through a classification of the types. The twenty adjective phrases were extracted by review of the further research. After then, it extracted to draw high adjective in observers visual image formation. This study analyzed the preference, symbolized representation of the university main gate. The results are summarized as follows : 1. The symbol and representation of form has a high correlation. In other words, the symbolic scale would be high positively when the representation scale be high. 2. Eight items among the twenty adjective items appeared to explain the university main gates. The twelve items of them wouldn't be related to grasp the main gate