Browse > Article

A study on the pinch-off characteristics for Double Cate MOSFET in nuo structure  

고석웅 (군산대학교 전자정보공학부)
정학기 (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.6, no.7, 2002 , pp. 1074-1078 More about this Journal
Abstract
In this paper, we designed double gate(DG) MOSFET structure which has main gate(MG) and two side gates(SG). We have simulated using TCAD simulator U .WOSFET have the main gate length of %m and the side gate length of 70nm. Then, u'e have investigated the pinch-off characteristics, drain voltage is changed from 0V to 1.5V at VMG=1.5V and VSG=3.0V. In spite of the LMG is very small, we have obtained a very good pinch-off characteristics. Therefore, we know that the DG structure is very useful at nano scale.
Keywords
double gate; main gate; side gate; TCAD simulator; pinch-of;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Byung Yong Choi, Suk Kang Sung, Byung Gook Park, and Jung Duk Lee, '70㎚ NMOSFET Fabrication with 12㎚ n+-p Junction Using As+2 LOW Energy Implantation',Jpn. 40., pp.2607-2610, 2001
2 Sangyeun Han , Sungil Chang, Jongho Lee, and Hyungcheol Shin, '50㎚ MOSFET With Electrically Induced Source/Drain (S/D)Extensions', IEEE Trans. Electron Dev. 48, pp. 2058-2064, 2001   DOI   ScienceOn
3 J. M Early, Effects of space-charge layer widening in junction transistors, Proc. IRE. 40, pp. 1401-1406, 1952   DOI   ScienceOn