• The KIPS Transactions:PartA
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• v.14A no.3 s.107
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• pp.147-150
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• 2007

This paper describes a new low-swing inverter for low power consumption. To reduce a power consumption, an output voltage swing is in the range from 0 to VDD-2VTH. This can be done by the inverter structure that allow a full swing or a swing on its input terminal without leakage current. Using this low-swing voltage technology, we proposed a low-power 16$\times$16 bit parallel multiplier. The proposed circuits are designed with Samsung 0.35$\mu$m standard CMOS process at a 3.3V supply voltage. The validity and effectiveness are verified through the HSPICE simulation.. Compared to the previous works, this circuit can reduce the power consumption rate of 17.3% and the power-delay product of 16.5%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.11
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• pp.1512-1516
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• 2018

The power system and control system constantly reveals surge voltage such as switching surge of lighting devices and power conversion devices, operating and stops surge of rotating devices, charge & discharge surge, opening & closing surge of circuit breakers and the like. Such a surge voltages can cause damage or malfunction of the element such as CPU, Memory, semiconductor etc. In the industry, in order to protect the system from the surge voltage, a surge protector with low discharge starting voltage, fast response time, and low capacitance is required, and technical development research for that is ongoing. In this paper, in order to solve the problem of the existing GDT discharge tube not discharging from the transient voltage which is higher than the commercial voltage and lower than the discharge voltage of the discharge element, we have developed a discharge element having the control electrode & control circuit. The discharge element having the control electrode and the control circuit can control the discharge voltage according to the needs of the consumer and can satisfy the requirement of the discharge element and the technology of the surge protector downsizing technology and the surge protection technology. It is judged to be effective for development.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.520-522
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• 2008

A novel two-switch active clamp forward converter suitable for high input voltage applications is proposed. The main advantage of the proposed converter, compared to the conventional active forward converters, is that circuit complexity is reduced and the voltage stress of the main switches is effectively clamped to either the input voltage or the clamping capacitor voltage by two clamping diodes without limiting the maximum duty ratio. Also, the clamping circuit does not include additional active switches, so a low cost can be achieved without degrading the efficiency. Therefore, the proposed converter can feature high efficiency and low cost for high input voltage applications. The operational principles, features, and design considerations of the proposed converter are presented in this paper. The validity of this study is confirmed by the experimental results from a prototype with 200W, 375V input, and 12V output.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.93-95
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• 2005

A new energy-recovery- sustain circuit suitable for a Plasma Display Panel(PDP) application is proposed. The proposed circuit features the low device voltage stresses, essential to design a power efficient and low cost PDP driver circuit. The proposed circuit is demonstrated experimentally for driving a 42 inches plasma display panel.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.1166-1169
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• 2005

This paper describes a new transient voltage suppressor(TVS) with a low insertion loss and a high cut-off frequency to protect antenna circuit from transient voltages. Conventional protection devices have some problems such as a low frequency bandwidth and a high insertion loss. In order to improve these limitations, a coaxal type TVS, which consists of a gas tube is developed. The performance of the proposed transient voltage suppressor is tested by using a combination surge generator specified in IEC 61000-4-5 standard and by using a network analyzer of 40 MHz ${\sim}$ 5 GHz bandwidth. From the experimental results, it is confirmed that the proposed TVS has an enough protection performance in a low insertion loss and a high cut-off frequency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.9
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• pp.59-64
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• 2015

IEC is an international standards which are used in many countries with Europe as the center. IEC standard is introduced in Korea according to WTO/TBT agreements, however until now there are no buildings in Korea which are designed applying IEC standard. Therefore, KEA(Korea Electric Association) is scheduled to construct Korean low voltage electrical installation integration test site which is designed applying IEC standard. In this paper, before being under construction of Korean low voltage electrical installation integration test site, power substation is modeled based on real design parameters and method to select circuit breakers and cables is presented applying IEC standard in the modeled power substation. EMTP(ElctroMagnetic Transient Program) is used for simulation program. EMTP which is power system analysis program is easy to model power system and power substation.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.257-260
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• 2017

In this paper, we present the design of a 4.5 V low dropout (LDO) voltage regulator implemented in the 130 nm CMOS process. The design uses a two-stage cascaded operational transconductance amplifier (OTA) as an error amplifier, with a body bias technique for reducing dropout voltages. PMOS is used as a pass transistor to ensure stable output voltages. The results show that the proposed LDO regulator has a dropout voltage of 32.06 mV when implemented in the130 nm CMOS process. The power dissipation is only 1.3593 mW and the proposed circuit operates under an input voltage of 5V with an active area of $703{\mu}m^2$, ensuring that the proposed circuit is suitable for low-power applications.

• Journal of IKEEE
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• v.19 no.4
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• pp.573-582
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• 2015

This paper presents the design of dual mode boost converter for energy harvesting. The designed converter boosts low voltage from energy harvester through a startup circuit. When the voltage goes above predefined value, supplied voltage to startup circuit is blocked by voltage detector. Boost controller makes the boosted voltage into $V_{OUT}$. The proposed circuit consists of oscillator for charge pump, charge pump, pulse generator, voltage detector, and boost controller. The proposed converter is designed and fabricated using a $0.18{\mu}m$ CMOS process. The designed circuit shows that minimum input voltage is 600mV, output is 3V and startup time is 20ms. The boost converter achieves 47% efficiency at a load current of 3mA.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.706-711
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• 2014

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82 mW with a single power supply of 1.2V and achieves 4.3 effective number of bits for input frequency up to 1 MHz at 500 MS/s. Therefore it results in 4.6 pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.