• Journal of Power Electronics
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• v.18 no.4
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• pp.965-974
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• 2018

A new zero-voltage-switching (ZVS) push-pull pulse-width modulation (PWM) converter is proposed in this paper. The wide ZVS condition for all of the switches is obtained by utilizing the energy stored in the output inductor and magnetizing inductance. As a result, the switching losses can be dramatically reduced. A simple auxiliary circuit including two small diodes and one capacitor is added at the secondary side of a high frequency (HF) transformer to reset the primary current during the circulating stage and to clamp the voltage spike across the rectifier diodes, which enables the use of low-voltage and low-cost diodes to reduce the conducting and reverse recovery losses. In addition, there are no active devices or resistors in the auxiliary circuit, which can be realized easily. A detailed steady operation analysis, characteristics, design considerations, experimental results and a loss breakdown are presented for the proposed converter. A 500 W prototype has been constructed to verify the effectiveness of the proposed concept.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.707-710
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• 1998

This paper presents a new voltage down converter(VDC) for low power, high speed DRAM. This VDC Consists of RVG(Reference Voltage Generator) and Driver Circuit. And it is independent of temperature variation, and Supply Voltage. Using weak inversion region, this RVG dissipates low power. Internal Voltage Source of this VDC is stable in spite of high speed operation of memory array. This circuit is designed with a $0.65\mu\textrm{m}$ nwell CMOS technology. In HSPICE simulation results, Temperature dependency of this RVG is $20\muV/^{\circ}C,$ supply voltage dependency is $\pm0.17%,$ $VCC=3.3V\pm0.3V,$ and current dissipation is $5.22\muA.$ Internal voltage source bouncing of this VDC is smaller than conventional VDC.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.2
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• pp.80-86
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• 2011

This paper presents an integrated variable amplitude high voltage pulse generation circuit with low power and small size for driving industrial piezoelectric printer heads. To solve the problems of large size and power overhead of conventional pulse generators that usually assembled with multiple high-cost discrete ICs on a PCB board, we have designed a new integrated circuit (IC) chip. Since all the functions are integrated on to a single-chip it can achieve low cost and control the high-voltage output pulse with variable amplitudes as well. It can also digitally control the rising and falling times of an output high voltage pulse by using programmable RC time control of the output buffer. The proposed circuit has been designed and simulatedd in a 180[nm] Bipolar-CMOS-DMOS (BCD) technology using HSPICE and Cadence Virtuoso Tools. The proposed single-chip pulse generation circuit is suitable for use in industrial printer heads requiring a variable high voltage driving capability.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.723-727
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• 2004

A new high-performance and low cost single switch energy recovery display driver for an AC plasma display panel (PDP) is proposed. Since it is composed of only one auxiliary power switch, two small inductors, and eight diodes compared with the conventional circuit consisting of four auxiliary power switches, two small inductors, eight power diodes, and two external capacitors, it features a much simpler structure and lower cost. Nevertheless, since the rootmean-square (RMS) value of the inductor current is very small, it also has very desirable advantages such as n low conduction loss and high efficiency. Furthermore, there are no serious voltage-drops caused by the large gas-discharge current with the aid of the discharge current compensation, which can also greatly reduce the current flowing through power switches and maintain the panel to light at n lower sustaining voltage. In addition, all main power switches are turned on under the zero-voltage switching (ZVS) and thus, the proposed circuit has a improved EMI, increased reliability, and high efficiency. Therefore, the proposed circuit will be well suited to the wall hanging PDP TV. To confirm the validity of the proposed circuit, circuit operations, features,and design considerations are presented and verified experimentally on a 6-inch PDP, 50kHz-switching frequency, and sustaining voltage 141V based prototype.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.336-339
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• 2009

In this paper, such as battery power or solar energy and fuel cells generated from Renewable energy sources, high voltage to low voltage DC-DC Converter for converting the design of the study. System consists of low voltage ($24{\sim}28$ [VDC]) and Boosts the voltage (270 [VDC]) for a 3 [kW] DC-DC converter and control circuit is configured as, Power switch the ST Tomson's Automotive low voltage high current MOSFET switches STE250NS10S (temperature 250A) was applied to the two parallel. Also, Controller's processor used ATMEGA128, and Gate Drive applies and composed Photo Coupler TLP250. development. Input voltage (24V) and output voltage (270V) for Conversion in the H-bridge converter topology of the circuit output side power and voltage to control the implementation of the Phase shift angle control applied. And, 3kW of power to pass appropriate specification of the secondary side as interpreted by the high frequency transformer, and the experimental production and analysis of the experiment

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.419-422
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• 2004

A sensing scheme for current-mode magneto-resistance random access memory (MRAM) with a 1T1MTJ cell structure is proposed. Magnetic tunnel junction (MTJ) resistance, which is HIGH or LOW, is converted to different cell currents during READ operation. The cell current is then amplified to be evaluated by the reference cell current. In this scheme, conventional bit line sense amplifiers are not required and the operation is less sensitive to voltage noise than that of voltage-mode circuit is. It has been confirmed with HSPICE simulations using a 0.35-${\mu}m$ 2-poly 4-metal CMOS technology.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.919-922
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• 2003

This paper presents a novel low power driving circuit for passive matrix organic lighting emitting diodes (OLED) displays. The proposed driving method for a low power OLED driving circuit which reduce large parasitic capacitance in OLED panel only use current driving method, instead of mixed mode driving method which uses voltage pre-charge technique. The driving circuit is implemented to one chip using 0.35${\mu}{\textrm}{m}$ CMOS process with 18V high voltage devices and it is applicable to 96(R.G.B)X64, 65K color OLED displays for mobile phone application. The maximum switching power dissipation of driving power dissipation is 5.7mW and it is 4% of that of the conventional driving circuit.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.304-309
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• 2005

This paper presents an electronic ballast using a step down converter, a low frequency inverter for high intensity short-arc discharge lamp. The proposed ballast is composed of a full-wave rectifier, a step down converter operated as a current source with power regulation and a low frequency inverter with external ignition circuit. The ignition circuit generates high voltage pulse of $3{\sim}5[kV]$ peak, 130[Hz] periodically. Moreover, it is able to reignite at regular intervals by protective circuit. As experimental results on the test, acoustic resonance phenomenon is eliminated by operating the low frequency square wave voltage and current. Lamp voltage, current and consumption power are measured 123.8[V], 8.1[A] and 1,002[W], respectively. It was confirmed that the designed ballast operate the lamp with a constant power.