• Journal of Welding and Joining
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• 제33권2호
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• pp.23-31
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• 2015

Stainless steel is used in automobile muffler and exhaust systems. However, in comparison with other steels it has a high thermal expansion rate and low thermal conductivity, and undergoes excessive thermal deformation after welding. To address this problem, we evaluated the use of arc brazing in place of welding for the processing of an exhaust system, and investigated the parameters that affect the joint characteristics. Muffler parts STS439 and hot-dipped Al coated steel were used as test specimens, and CuAl brazing wire was used as the filler metal for the cold metal transfer (CMT) welding machine, which is a low heat input arc welder. In addition, a Box-Behnken design of experiment was used, which is a response surface methodology. The main process parameters (current, speed, and torch angle) were used to determine the appropriate welding quality and the mechanical properties of the brazing part was evaluated at the optimal welding condition. The optimal processing condition for arc brazing was 135A current, 51cm/min speed and $74^{\circ}$ torch angle. The process was applied to an actual exhaust system muffler and the prototype was validated by thermal fatigue, thermal shock, and endurance limit tests.

• 한국재료학회지
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• 제16권9호
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• pp.571-577
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• 2006

We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.53.2-53.2
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• 2010

In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below $250^{\circ}C$) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

• 한국재료학회지
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• 제22권10호
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• pp.562-568
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• 2012

Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

• 태양에너지
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• 제19권4호
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• pp.33-43
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• 1999

The study on ice thermal storage system is to improve total system performance and increase the economical efficiency in actual all-conditioning facilities. To obtain the high charging and discharging efficiencies in ice thermal storage system, the improvement of thermal stratification is essential, therefore the process flow must be piston flow in the cylindrical type. With the relation of the aspect ratio(H/D) in the storage tank, the stratification is formed better as inlet flow rate is smaller. If the inlet and the outlet port are settled at the upside and downside of the storage tank, higher storage rate could be obtainable. In case that the flow directions inside the thermal storage tank are the upward flow in charging and the downward in discharging, thermal stratification is improved because the thermocline thickness is maitained thin and the degree of stratification increases respectively. In the charging process, in case of inlet flow rate the thermal stratification has a tendency to be improved with the lower flow rate and smaller temperature gradient in case of inlet temperature, the large temperature difference between inflowing water and storage water are influenced from the thermal conduction. The effect of the reference temperature difference is seen differently in comparison with the former study for chilled and hot water. In the discharging process, the thermal stratification is improved by the effect of the thermal stratification of the charging process.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• 한국정밀공학회지
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• 제13권3호
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• pp.110-122
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• 1996

Finite element analysis tool was developed to analyze the casting process. Generally, casting process consists of mold filling and solidification. Both filling and solidication process were simulated simultaneously to investigate the effects of process variables and to predict the defect. At filling process, thermal coupling was especially considered to investigate thermal history of material during the filling stage. And thermal condition at the final stage of filling is used as the initial conditions in a solidification process for the exact simullation of the actual casting processes. At mold filling process, Lagragian-type finite element method with automatic remeshing scheme was used to find the material flow. A perturbation method with artificial viscosity is adopted to avoid numerical instability in low viscous fluid. At solidification process, enthalpy-based finite element method was used to solove the heat transfer problem with phase change. And elastic stress analysis has been performed to predict the thermal residual stress. Through the FE analysis, solidification time, position of solidus line, liquidus line and thermal residual stress are found. Through the study, the importance of combined analysis has been emphasized. Finite element tools developed in this study will be used process design of casting process and may be basic structure for total CAE system of castings which will be constructed afterward.

• 한국표면공학회지
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• 제55권6호
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• pp.308-318
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• 2022

The surface modification and treatment using thermal plasma were reviewed in academic fields. In general, thermal plasma is generated by direct current (DC) and radiofrequency (RF) power sources. Thermal spray coating, a typical commercial process using thermal plasma, is performed by DC thermal plasma, whereas other promising surface modifications have been reported and developed using RF thermal plasma. Beyond the thermal spray coating, physical and chemical surface modifications were attempted widely. Superhydrophobic surface treatment has a very high industrial demand particularly. Besides, RF thermal plasma system for large-area film surface treatment is being developed. Thermal plasma is especially suitable for the surface modification of low-dimensional nanomaterial (e.g., nanotubes) by utilizing high temperature and rapid quenching. It is able to synthesize and modify nanomaterials simultaneously in a one-pot process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1974-1976
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• 2005

The feasibility of a midgap metal gate is investigated for 32nm MOSFET low power applications. The midgap metal gate MOSFET is found to deliver a driving current as high as a bandedge gate one for the low power applications if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in ITRS roadmap. In addition, a process simulation is run using halo implants and thermal processes to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. From the thermal budget point of view, the bandedge metal gate MOSFET is more vulnerable to the following thermal process than the midgap metal gate MOSFET since it requires a steeper retrograde doping profile. Based on the results, a guideline for the gate workfunction and the channel profile in the 32 nm MOSFET is proposed.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.365-369
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• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.