• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.109-109
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• 2000

Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.69-75
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• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.504-509
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• 1999

In-situ cleaning and subsequent silicon epitaxial film growth were performed in a load-locked reactor equipped with Hg-grid UV lamp and PBN heater to obtain the smooth and contaminant-free underlying surface and develop low-temperature epitaxial film growth process. The removals of organic and native oxide were investigated using UV-excited $O_2$ and $NF_{3}/H_{2}$, and the effect of the surface condition was examined on the quality of silicon epitaxial film grown at temperature as low as $750^{\circ}C$. UV-excited gas phase cleaning was found to be effective in removing the organic and native oxide successfully providing a smooth surface with RMS roughness of 0.5$\AA$ at optimal condition. Crystalline quality of epitaxial film was determined by smoothness of cleaned surface and the presence of native oxide and impurity. Crystalline defects such as dislocation loops or voids due to the surface roughness were observed by XTEM.

• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.187-193
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• 2010

The solute carbon content in ferrite is one of the important factors to obtain good formability in low carbon steels. Although most of the carbons are consumed by the formation of grain boundary cementite during coiling after hot-rolling, the carbon content after coiling is normally observed much more than that of equilibrium. In this study, a classical nucleation and growth model is used to simulate the precipitation kinetics of the grain boundary cementite from coiling temperature (CT) to room temperature (RT). The predicted precipitation behaviors depending on the initial carbon content and the cooling rate are compared with the reported. As a result, the lateral growth of thickening of cementite is a major factor for the sluggish reaction of grain boundary cementite. The reduction of solute carbon content after coiling is divided into three regions: a) increase due to no cementite precipitation, b) decrease due to the fast length-wise growth of cementite, c) increase due to the slow thickness-wise growth of cementite.

• The Korean Journal of Mycology
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• v.40 no.4
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• pp.191-203
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• 2012

Mycelial growth of ectomycorrhizal fungi (27 strains of 8 species) collected from Korean forests was observed on various culture conditions (media, temperature, pHs). After 60 days of incubation, all strains grown on potato dextrose agar (PDA) and modified Melin-Norkran's agar (MMNA), whereas no mycelial growth was observed on malt extract agar (MEA) or sabouraud dextrose agar (SDA) in some strains including Tricholoma matsutake. Mycelial growth on PDA was poor at high temperature ($30^{\circ}C$) than the low temperature ($10^{\circ}C$). The optimal temperature on PDA and pH in potato dextrose broth (PDB) for mycelial growth in most strains were $20-25^{\circ}C$ and pH 4-5, respectively. All strains tested showed the carboxymethyl cellulase (CM-cellulase) activity and the maximal cellullase activity was expressed by the mycelium of T. matsutake (KFRI 1266) on the CMC agar plate with pH 5.0.

• Korean Journal of Agricultural and Forest Meteorology
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• v.16 no.4
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• pp.285-296
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• 2014

The impacts of high temperature and drought were studied on the seedlings of three families (superiorgangwon74, intermediate-gangwon77 and inferior-gangwon132) of P. densiflora which had been selected by the based on the growth indexes of 32-year-old. The seedlings were grown in controlled-environment growth chambers with combinations of four temperatures ($-3^{\circ}C$, $0^{\circ}C$, $+3^{\circ}C$ $+6^{\circ}C$; based on the monthly average for 30 years in Korea) and two water conditions (control, drought). The growth performance, photosynthetic parameters and photosynthetic pigment contents were measured at every 30 days under four temperatures and drought condition, and the end of each treatment. The superior family showed higher relative diameter at root collar growth rate and the dry weight than intermediate and inferior family in all treatments. Under elevated temperature and drought condition, growth rate was decreased, and seedlings showed lower growth rate than that of control in three families under low temperature. Photosynthetic rate, stomatal conductance and transpiration rate of three families decreased with the increase of temperature and drought condition, and that of seedlings under low temperature was lower than control. But under elevated temperature and drought condition, water use efficiency increased in three families. Photosynthetic pigment contents of leaves decreased under the increase of temperature and drought condition, but chlorophyll a/b ratio increased with the increase of temperature and drought condition in three families. The superior family showed higher total chlorophyll content than intermediate and inferior family in all treatments. In conclusion, P. densiflora is under changed temperature and drought condition, growth was decreased, seedlings more affected in elevated temperature than that of decreased temperature. The increase in monthly average temperature in Korea of more than $6^{\circ}C$, P. densiflora seedling growth in depending on region may decrease. In this study, the superior family(gangwon74) showed more excellent growth and physiological responses than intermediate (gangwon77) and inferior(gangwon132) family under changes temperature and drought.

• The Korean Journal of Malacology
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• v.26 no.4
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• pp.303-310
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• 2010

Rearing condition and species of microalgae on growth and survival of the sunray surf clam, Mactra chinensis larvae were investigated for artificial seedling production. The larvae of M. chinensis on higher temperature showed high growth and low survival and was grown over $230{\mu}m$ in shell length 14 days after hatching, but low growth as $151.1{\mu}m$ at $18^{\circ}C$. The larvae of M. chinensis on salinity showed highest daily growth and survival as $11.3{\mu}m$ and 65.8% at 30 psu, respectively. The optimum of water temperature and salinity for the larval rearing were $23^{\circ}C$ and 30-35 psu over 25 psu at least. The density of larval rearing was below 10 per 1 ml in rearing seawater for elevating the development rate from D-shaped to settled (metamorphosing) stage. The larvae fed the mixed diet of Isochrysis galbana, Pavlova lutheri, Isochrysis sp. (green), Chlorella ellipsoidea showed highest growth and survival. The larvae fed the single diet of I. galbana, Isochrysis sp. (green) showed high growth and survival. But the larvae fed the single diet of P. lutheri and C. ellipsoidea showed low growth and survival. The optimum diet of larvae of M. chinensis was over two species of microalgae included I. galbana, Isochrysis sp. (green) for elevating the high growth and survival.

• Journal of Bio-Environment Control
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• v.11 no.4
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• pp.163-167
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• 2002

This study was carried out to investigate the effect of minimum night temperature in the PE house on growth of seedlings of Pinus densiflora and Betula platyphylla in winter season. The experiment was performed with three minimum night temperature regimes,5~8$^{\circ}C$, 10~13$^{\circ}C$ and 15~18$^{\circ}C$. The temperature regimes were maintained for 8 weeks (to April 6) after germination peak, and then were broken by increasing natural temperature. The temperature did not affect the germination rate but delayed the germination by 10 days. Height, root collar diameter growth, and dry weight of two species were reduced by relatively low night temperature. The reduction was more obvious in the dry weight of above the ground measured at 8 weeks after germination. The seedlings grown for 8 weeks at 5~8$^{\circ}C$ showed the lowest T/R ratio. It was also observed that the height growth response in Betula platyphylla seedlings to relatively low temperature was more sensitive than Pinus densiflora.