한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
- /
- Pages.1263-1265
- /
- 2007
Channel Orientation Dependent Electrical Characteristics of Low Temperature Poly-Si Thin-film Transistor Using Sequential Lateral Solidification Laser Crystallization
- Lai, Benjamin Chih-ming (Display Technology Center, Industrial Technology Research Institute) ;
- Yeh, Yung-Hui (Display Technology Center, Industrial Technology Research Institute) ;
- Liu, Bo-Lin (Display Technology Center, Industrial Technology Research Institute)
- 발행 : 2007.08.27
초록
The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements