• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.76-83
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• 2007

This paper describes a low power ROM using single charge-sharing capacitor and hierarchical bit line (SCSC-ROM). The SCSC-ROM reduces the power consumption in bit lines. It lowers the swing voltage of bit lines to a very small voltage by using a charge-sharing technique with a single capacitor. It implements the capacitor with dummy bit lines to improve noise immunity and make easy to design. The hierarchical bit line further saves the power by reducing the capacitance in bit lines. The SCSC-ROM also reduces the power consumption in control unit and predecoder by using the hierarchical word line decoder. The simulation result shows that the SCSC-ROM with $4K{\times}32bits$consumes only 37% power of a conventional ROM. A SCSC-ROM chip is fabricated in a $0.25{\mu}m$ CMOS process. It consumes 8.2mW at 240MHz with 2.5V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.375-378
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• 2013

A reference voltage generator which is insensitive to PVT (process-voltage-temperature) variation necessary for NVM memory IPs such as EEPROM and MTP memories is designed in this paper. The designed BGR (bandgap reference voltage) circuit based on MagnaChip's $0.18{\mu}m$ EEPROM process uses a low-voltage bandgap reference voltage generator of cascode current-mirror type with a wide swing and shows a reference voltage characteristic insensitive to PVT variation. The minimum operating voltage is 1.43V and the VREF sensitivity against VDD variation is 0.064mV/V. Also, the VREF sensitivity against temperature variation is $20.5ppm/^{\circ}C$. The VREF voltage has a mean of 1.181V and its three sigma ($3{\sigma}$) value is 71.7mV.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.979-982
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• 2003

Due to the differential transmission technique and low voltage swing, LVDS has been widely used for high speed transmission with low power consumption. This paper presents the design and implementation of interface circuits for 1.5Gb/s operation in 0.35um CMOS technology. The interface circuit ate fully compatible with the low-voltage differential signaling(LVDS) standard. The LVDS proposed in this paper utilizes a sense amplifiers instead of the conventional differential pre-amplifier, which provides a 1.5Gb/s transmission speed with further reduced driver output voltage. Furthermore, the reduced driver output voltage results in reducing the power consumption.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.

• Journal of Environmental Science International
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• v.23 no.5
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• pp.943-962
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• 2014

Industrial gas drying, dilute gas mixtures purification, air fractionation, hydrogen production from steam reformers and petroleum refinery off-gases, etc are conducted by using adsorptive separation technology. The pressure swing adsorption (PSA) has certain advantages over the other methods, such as absorption and membrane, that are a low energy requirement and cost-effectiveness. A key component of PSA systems is adsorbents that should be highly selective to a gas being separated from its mixture streams and have isotherms suitable for the operation principle. The six standard types of isotherms have been examined in this review, and among them the best behavior in the adsorption of $CO_2$ as a function of pressure was proposed in aspects of maximizing a working capacity upon excursion between adsorption and desorption cycles. Zeolites and molecular sieves are historically typical adsorbents for such PSA applications in gas and related industries, and their physicochemical features, e.g., framework, channel structure, pore size, Si-to-Al ratio (SAR), and specific surface area, are strongly associated with the extent of $CO_2$ adsorption at given conditions and those points have been extensively described with literature data. A great body of data of $CO_2$ adsorption on the nanoporous zeolitic materials have been collected according to pressure ranges adsorbed, and these isotherms have been discussed to get an insight into a better $CO_2$ adsorbent for PSA processes.

• Journal of Biomedical Engineering Research
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• v.31 no.3
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• pp.227-233
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• 2010

This study analyzed performance according to kick point and stiffness of Soft-$golf^{TM}$ shaft. This research team developed soft-$golf^{TM}$ as a new fusion sports with similar motions with golf and it can be learned safely for all age groups in 2002. The head of Soft-$golf^{TM}$ club is made of zinc alloy and has a mesh or a grid structure, and shaft uses carbon graphite to reduce the total weight of the club. To improve carry distance and to assure consistency of a ball during Soft-$golf^{TM}$ swing, this study manufactured shaft with various kick points (low, middle and high) and stiffness (stiff, regular, lady, morelady) and analyzed a swing motion with characteristics of each shaft presented in a dynamic condition such as a ball's speed, a head's torsion angle and a ball's deviation with ProAnalyst program through a high-speed camera taking pictures using a swing machine robot system(Robo-7). From all of the results, this study determined an appropriate shaft of Soft-$golf^{TM}$.

• Journal of Convergence for Information Technology
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• v.11 no.7
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• pp.104-110
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• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.451-454
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• 2015

This paper introduces 3 type of OTAs with $0.35-{\mu}m$ standard CMOS technology for Low-Power, Low-Voltage. The first type is a two-stage OTA designed to operate with a 1-V VDD and it has $1.774{\mu}W$ low power consumption. All transistors are operating in strong inversion. It takes Gm-Enhancement techniques to compensate gm, which is lowered by Bulk-Driven technique and has an Wide swing current mirror for low voltage operation and a Class-A output. The second type is a Two-stage OTA designed to operate with a 0.8-V VDD and It has 52nW low power consumption and 112dB high gain. The current mirror uses Composite Transistor binding Gates of two MOSFET to raise Rout which is similar with cascode structure. The third type is a Two-stage OTA designed to operate with a 0.6-V VDD and It has 160nW low power consumption and 72dB high gain. It takes Level Shift technique by Common Gate structure to amplify signals without additional bias voltage at second stage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.739-742
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• 1997

A remote drum grappling device coupled to the anti-swing crane has been developed by KAERI to cope with problems involved in manually treating low level waste drums. In order for this grappling device to be operated effectively, multi-sensors including CCD camera were employed. As an activity representation scheme of the device, Extended State Machine (ESM) was used to descibe its operation sequences. The performance testing of the device was conducted successfully, and consequently its application could be extendable to industrial operation environment.

• Proceedings of the KIEE Conference
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• 1998.11b
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• pp.621-623
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• 1998

We implemented PanelLlnk digital flat panel display transmitter supporting SXGA($1280{\times}1024$) resolution. It can transmit data through 10m cable at XGA($1024{\times}768$) resolution and through 7m cable at SXGA($1280{\times}1024$). We also found resistor value to get stable display image by low voltage differential signal swing control.