• 제목/요약/키워드: low pressure plasma

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Surface Treatment of a Titanium Implant using a low Temperature Atmospheric Pressure Plasma Jet

  • Lee, Hyun-Young;Ok, Jung-Woo;Lee, Ho-Jun;Kim, Gyoo Cheon;Lee, Hae June
    • Applied Science and Convergence Technology
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    • v.25 no.3
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    • pp.51-55
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    • 2016
  • The surface treatment of a titanium implant is investigated with a non-thermal atmospheric pressure plasma jet. The plasma jet is generated by the injection of He and $O_2$ gas mixture with a sinusoidal driving voltage of 3 kV or more and with a driving frequency of 20 kHz. The generated plasma plume has a length up to 35 mm from the jet outlet. The wettability of 4 different titanium surfaces with plasma treatments was measured by the contact angle analysis. The water contact angles were significantly reduced especially for $O_2/He$ mixture plasma, which was explained with the optical emission spectroscopy. Consequently, plasma treatment enhances wettability of the titanium surface significantly within the operation time of tens of seconds, which is practically helpful for tooth implantation.

Luminescence Properties of Argon and Neon Gas Using an Inductively Coupled Plasma (유도결합형 Ar, Ne 가스에서의 플라즈마 발광 특성)

  • Her, In-Sung;Lee, Young-Hwan;Lee, Jong-Chan;Choi, Yong-Sung;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.220-223
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    • 2004
  • Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10[mTorr] to 300[mTorr] or 500[mTorr] and the RF power was varied from 10[W] to 200[W]. It was found that the luminance tends to be decreased when argon and neon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon and neon pressure is low and when the RF power is in the range of $30[W]{\sim}40[W]$ or 10[W].

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Atmospheric Plasma and Its Applications (대기압 플라즈마와 응용)

  • Uhm Han-Sup
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.117-138
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    • 2006
  • Plasmas can be made by electrical discharge on earth. Most of the plasmas on earth have been generated in low pressure environments where the pressure is less than one millionth of the atmospheric pressure. However, there are many plasma applications which require high pressure plasmas. Therefore, scientists start research on plasma generation at high pressure to avoid use of expensive vacuum equipments. Large-volume inexpensive plasmas are needed in the areas of material processing, environmental protection and improvement, efficient energy source and applications, etc. We therefore developed new methods of plasma generations at high pressure and carried out research of applying these plasmas to high tech industries representing 21 century. These research fields will play pivotal roles in material, environmental and energy science and technology in future.

The Effect of Habitual Calcium and Sodium Intakes on Blood Pressure Regulating Hormone in Free-Liveing Hypertensive Women (정상생활을 하는 고혈압 여성에 있어서 일상적인 나트륨, 칼슘 섭취습관이 혈압조절 관련 호르몬에 미치는 영향)

  • 박정아;윤진숙
    • Journal of Nutrition and Health
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    • v.34 no.4
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    • pp.409-416
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    • 2001
  • In order to evaluate the effect of habitual Na and Ca intake on blood pressure regulation, we measured the habitual dietary intakes of Na and Ca, urinary excretion of Ca, Na and K, and plasma level of renin activity, aldosterone, and indices of Ca metabolism in 27 untreated hypertensive women and 30 age-matched normal women on a free diet. Hypertensive and total subjects were divided into four groups according to habitual dietary intakes of Na and Ca as low Na-low Ca(LNLC), low Na-high Ca(LNHC), high Na-low Ca(HNLC), and high Na-high Ca(HNHC). HNLC hypertensive group showed the lowest level of plasma renin activity, 25-(OH) Vit D$_3$, calcitonin and serum total Ca, and presented the highest level of PTH and urinary excretions of Na/K and Ca/Cr. There were no significant difference in plasma level of aldosterone and urinary excretion of Na and K among four hypertensive groups. When all subjects were divided into four groups according to the same method, HNLC group showed the highest level of blood pressure with no statistical significance and the lowest level of calcitonin and total serum Ca. The above results indicated that renin-aldosterone system and Ca regulating hormone has a mutual relationship in hypertension. Na and Ca may interact each other, rather than affecting independently blood pressure control. As a result, considering the fact that daily balance of Na and Ca intakes affects Na and Ca regulating hormones and urinary excretion of Na and Ca, it may be involved in blood pressure control. These results suggest that maintaining an adequate intake of Ca with less intake of Na may prevent from the risk of hypertension. (Korean J Nutrition 34(4) : 409~416, 2001)

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A Two-dimensional Steady State Simulation Study on the Radio Frequency Inductively Coupled Argon Plasma

  • Lee, Ho-Jun;Kim, Dong-Hyun;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.246-252
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    • 2002
  • Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

Generation of Low Temperature Plasma and Its Application (저온 플라즈마 발생과 응용)

  • Lee, Bong-Ju
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.9
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    • pp.413-416
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    • 2002
  • It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.

Dry etching of tin oxide thin films using an atmospheric pressure cold plasma (대기압 저온 플라스마에 의한 산화 주석 박막의 식각)

  • 이봉주;히데오미코이누마
    • Journal of the Korean Vacuum Society
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    • v.10 no.4
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    • pp.411-415
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    • 2001
  • Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of tin oxide $(SnO_2)$ thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the cathode material by an analysis with optical emission spectroscopy as well as by the plasma impedance. The etching ability of this plasma was evaluated by an emission intensity as well as by the evaluation of impedance using a plasma I-V curve.

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Low frequency plasma disinfectant effect in seawater and three major fish bacterial disease pathogens (저온 대기압 플라즈마를 이용한 해수 및 어류 병원성 세균 3종에 대한 살균소독효과)

  • Kim, Soo-Jin;Park, Shin-hoo;Jee, Bo-young;Kim, Yong-jae;Gwon, Mun-Gyoeng
    • Journal of fish pathology
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    • v.33 no.1
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    • pp.91-95
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    • 2020
  • Fish bacterial diseases have spread and caused serious problem for cultured marine fish in Korea. The important bacterial disease affecting mariculture such as olive flounder (Paralichthys olivaceus) are caused by Edwardsiella tarda, Vibrio scophthalmi and Streptococcus parauberis. For the bacterial disease protection in aquaculture industry, the water treatment is needed in aquaculture system. During the last decades atmospheric pressure non-thermal plasma in contact with liquids have received a lot of attention of environmental and medical application. In this study, we determined the disinfectant effect in seawater and three major fish bacterial disease pathogens by using low frequency plasma treatment. Three fish bacteria (E. tarda, V. schophthalmi, S. parauberis) were not detected within 16 min, 150 min and 270 min of 20 L, 500 L and 1 ton seawater post low frequency plasma treatment, respectively. Three major fish bacterial disease pathogens were not detected within 2 min after the low frequency plasma treatment, suggesting that the low frequency plasma possess disinfectant effectiveness.

Analysis of Electrical Properties of Ar Gas According to Input Pressure for Inductively Coupled Plasma (유도결합형 플라즈마에서 압력에 따른 Ar Gas의 전기적 특성분석)

  • Jo, Ju-Ung;Lee, Y.H.;Her, In-Sung;Kim, Kwang-Soo;Choi, Yong-Sung;Park, Dea-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1176-1179
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    • 2003
  • Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

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Analysis of Factors Impacting Atmospheric Pressure Plasma Polishing

  • Zhang, Ju-Fan;Wang, Bo;Dong, Shen
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.2
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    • pp.39-43
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    • 2008
  • Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.