• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.61-68
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• 2017

In this paper, we propose an improved magnetic field shielding structure to reducing the magnetic field generated in the wireless power transfer system operating at a low frequency band. The proposed structure consists of the magnetic material and the conductive material, magnetic field cancelling effect for power transfer is minimized while improving the leakage magnetic field cancelling effect by optimizing the various design parameters in the proposed structure. We analyzed and verified the efficiency of the wireless power transfer system and the reduction effect of the leakage magnetic field through computer simulation and measurement. Analysis results show that power transfer efficiency of the wireless power transfer system utilizing the proposed structure is 77 %, which is maintained at the conventional power transfer efficiency. In addition, compared with the structure maintaining high power transfer efficiency, leakage magnetic field strength is reduced to 29~37 % at the nearest point.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.31-37
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• 2000

In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was located either in or out of the channel region of the TFT. By removing the MILC boundary from channel region, on current, subthreshold slope and leakage current properties could be improved. When MILC boundary was located in the channel region, leakage current was reduced with electrical stress biasing. The amount of reduction increased as the channel width increased, but it was independent of the channel length.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.635-640
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• 2016

This paper dealt with the deterioration characteristics and an on-line diagnosis equipment for SPDs (surge protective devices). An accelerated aging test was carried out using a $8/20{\mu}s$ standard lightning impulse current to analyze the changes of electrical characteristics and to propose the diagnostic parameters and the criterion for deterioration of ZnO varistor which is the core component of SPDs. Based on the experimental results, an on-line diagnosis equipment for SPD was fabricated, which can measure the total leakage current, reference and clamping voltage. The leakage current measurement circuit was designed using a low-noise amplifier and a clamp type ZCT. A linear controller, the leakage current measurement part and a HVDC were used in the measurement of reference voltage. The measurement circuit of clamping voltage consisted of a surge generator and a coupling circuit. In a calibration process, measurement error of the prototype equipment was less than 3%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1646-1649
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• 2012

The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.

• Restorative Dentistry and Endodontics
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• v.23 no.2
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• pp.682-689
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• 1998

The purpose of this study was to evaluate the sealing ability of the Microseal$^{(R)}$, which was new obturation system made by Tycom company, U.S.A. Forty-five extracted single-rooted human teeth were resected at cemento-enamel junction and divided three groups. All canals were prepared using Profile system, and then each group was obturated by lateral condensation technique (group 1), vertical condensation technique (group 2) and Microseal$^{(R)}$ condensation technique (group 3) with root canal sealer. Teeth were immersed in resorcinol-formaldehyde resin for 5 days at $4^{\circ}C$ and the resin was allowed to polymerize completely for 4 days at room temperature. Teeth were resected horizontally at 1 mm (level I), 2 mm (level II), 3 mm (level III) from the anatomical root apex using low speed microtome and examined with Image analyzer (IBASR, Zeiss co., Germany.) at ${\times}25$ magnification. The gab between the canal wall and the filling material, which was filled with the resin, was measured at each of the three levels. Each ratio of leakage was expressed percentage by calculating the ratio of the area of the resin to the total area of the canal and was analyzed statistically (one-way ANOVA). The results were as follows; 1. The mean ratio of leakage (%) was 6.46% at group 1, 3.06% at group 2, 11.27% at group 3. 2. When evaluating the ratio of leakage at the three levels, there was level I> level II> level III in all groups. Especially, the difference between level I and level III was statistically significant (p<0.05). 3. When evaluating the ratio of leakage at the three groups, there was group 3> group 1> group 2 at all levels. Especially the difference between group 2 and group 3 was statistically significant (p<0.05).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• Restorative Dentistry and Endodontics
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• v.26 no.2
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• pp.153-161
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• 2001

The purpose of this study was to evaluate microleakage of six current dentin bonding systems. In this in vitro study, class V cavities were prepared on buccal and lingual surfaces of thirty extracted human molars. Each margin was on enamel and dentin/cementum. Experimental teeth were randomly divided into six groups of 5 each. Group 1 : Scotchbond Multi-Purpose; Group 2 : Single Bond; Group 3 : Prime&Bond NT ; Group 4 : Clearfil Liner Bond 2 ; Group 5 : MAC Bond II ; Group 6 : One-up Bond F. The bonding agent and composite resin were applied to class V cavities according to manufacturer's directions. After thermocycling, the specimens were immersed in 0.5% basic fuchsin dye solution for 6 hours and sectioned longitudinally through the center of the restoration with a low speed diamond saw. The degree of microleakage was measured as the extent of dye penetration under the stereomicroscope at $\times$20. The data were analyzed using one way ANOVA. When significant differences found. multiple comparisons were made using Duncan's Multiple Range Test. The results of this study were as follows: 1. In all groups, leakage value seen at the enamel margin was significantly lower than that seen at the dentin margin(P<0.001). 2. At the enamel margin, none of the dentin bonding systems used in this study showed statistically significant difference in leakage values(P<0.05). 3. At the cementum margin, group 3 showed the highest leakage value, and others were decreased as group 5, 6, 4 in that order, and group 1, 2 showed the lowest leakage value. There was statistically significant difference between group 3 and the other groups except for group 5(P<0.05).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Restorative Dentistry and Endodontics
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• v.25 no.2
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• pp.202-211
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• 2000

The aim of this study was to compare the apical sealing ability of a new thermoplasticized gutta-percha filling technique, the Easy Filling and the Quick Obturation system with lateral condensation technique and Thermafil system to evaluate their clinical acceptabilities. Fifty-two extracted single-rooted teeth were instrumented to #35 using the .04 taper ProFile system. Four groups of 12 teeth were obturated by lateral condensation technique. Thermafil system and two new thermoplasticized gutta-percha techniques, the Easy Filling system and Quick Obturation system (Meta Dental co. Ltd. Korea), respectively. Four teeth served as controls. After the teeth were immersed in 2% methylene blue dye for 48 hours, they were resected horizontally at 1mm to 5mm level from the anatomical apex using a low-speed microtome. Each section was examined under a stereomicroscope at ${\times40}$ magnification and photographed. After each image was scanned, the leakage area was measured at each level using Brain 3 (Nosdia Tech., Korea) software. Leakage ratio was calculated for each group and was analyzed statistically to come up with the following results: 1. At 1mm level, the Quick Obturation system had the largest amount of apical leakage and it was statistically significant when compared with the lateral condensation group and the Thermafil group (p<0.05). 2. At 2mm and 3mm level, there were no significant difference of apical leakage among all four groups (p>0.05), and from 4mm level, no apical dye penetration was observed in all the groups. In conclusion, the apical seal produced by Easy Filling system and the Quick Obturation system was comparable to lateral condensation technique and Thermafil system except for the 1mm level. More improvement of the apical seal can be expected as the operator becomes skillful with the new techniques.