1 |
K.-Y. Wong, W. Chen, and K. J. Chen, "Integrated Voltage Reference Generator for GaN Smart Power Chip Technology", IEEE Trans. Electron Devices, vol. 57, no. 4, April, 2010
|
2 |
P. N. Chyurlia, F. Semond, T. Lester, J. A. Bardwell, S. Rolfe, H. Tang, and N. G. Tarr, "Monolithic integration of AlGaN/GaN HFET with MOS on silicon <111> substrates, Electron. Lett., vol. 46, no. 3, Feb., 2010
|
3 |
Y.-M. Hsin, T.-Y. Ke, G.-Y. Lee, and J.-I. Chyi, "A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time", Phys. Status Solidi C, vol. 9, no. 3-4, pp. 949-952, Feb., 2012
DOI
ScienceOn
|
4 |
M.-W. Ha, M.-K. Han, and C.-K. Hahn, "Oxidation Process of GaN Schottky Diode for High-Voltage Applications", Trans. KIEE, vol. 60, no. 12, pp. 2265-2269, Dec., 2011
|
5 |
Y.-J. Lin, Y.-L. Chu, W.-X. Lin, F.-T. Chien, and C.-S. Lee, "Induced changes in surface band bending of n-type and p-type AlGaN by oxidation and wet chemical treatments", J. Appl. Phys., vol. 99, no. 7, April, 2006
|
6 |
M.-W. Ha, H. Woo, C. H. Roh, H. J. Song, J. H. Lee, O. Seok, W. Ahn, M.-K. Han, C.-K. Hahn, "1.5 kV-AlGaN/GaN Schottky Barrier Diode on a Si Substrate", Proc. 2012 Spring Symp. of KIEE Soc. Electrophys. Appl. pp. 57, 2012
|
7 |
N. Ikeda, Y. Niiyama, H. Kambayashi, Y. Sato, T. Nomura, S. Kato, and S. Yoshida, "GaN power transistors on Si substrates for switching applications", Proc. IEEE, vol. 98, no. 7, pp. 1151-1161, July, 2010
|
8 |
T. Paskova, D. A. Hanser, and K. R. Evans, "GaN Substrates for III-Nitride Devices", Proc. IEEE, vol. 98, no. 7, pp. 1324-1338, July, 2010
|
9 |
http://www.imec.be
|