Change in Electrical Properties of Al2O3/GaN MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature |
Kwak, No-Won
(청주대학교 전자공학과)
Lee, Woo-Seok (청주대학교 전자공학과) Kim, Ka-Lam (청주대학교 전자공학과) Kim, Hyun-Jun (청주대학교 전자공학과) Kim, Kwang-Ho (청주대학교 전자공학과) |
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