• 한국세라믹학회지
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• 제56권4호
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• pp.412-420
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• 2019

In this study, the dielectric and polarization properties of manganese (Mn% = 0.0, 0.1, 0.2, 0.5) doped (Pb_0.93La_0.07)(Zr_0.82Ti_0.18)O₃ (PLZT 7/82/18) anti-ferroelectric ceramics were studied for energy storage capacitor and pyroelectric applications. A systematic investigation demonstrated that the electric properties of PLZT 7/82/18 ceramics are affected significantly by the Mn-doping content. A maximum dielectric constant of ~ 2,128 at 1 kHz was found for 0.1% Mn-doped PLZT ceramics with a low dielectric loss of 0.018. The bipolar polarization versus electric field (P-E) hysteresis loops were traced for all compositions showing a typical anti-ferroelectric nature. The breakdown field was found to decrease with Mn-doping. The energy storage density and efficiency were found to be 460 J/㎤ and ~ 63%, respectively, for 0.2% Mn-doped PLZT ceramics. The pyroelectric coefficient of PLZT ceramics shows an increase based on the amount of Mn-doping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

• 한국세라믹학회지
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• 제34권8호
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3박막을 RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/SiO2/Si(100) 기판에 증착하였다 .누설전류에 영향을 주는 것으로 알려진 열처리 조건, dopant 효과 등을 평가하고자 이온반경이Ti와 유사하고 대부분이 Ti 자리를 치환하는 것으로 알려진 Nb와 Al을 각각 danor와 acceptor로 선택하여 BST 박막에 첨가한 후 누설전류를 측정하였다. 고온에서 in-situ 증착된 BST 박막은 거친 표면 형상을 보이며 낮은 전압에서 파괴가 발생하고, Nb 첨가로 누설전류가 증가하였다. 삼온 증착후 후열처리된 박막은 표면 형상도 평할도가 증가하였으며 in-situ로 제조된 박막에 비해 높은 파괴전압과 낮은 누설전류를 나타내었다. 특히 Al이 첨가된 BST 박막의 누설전류밀도는 ~10A/cm2로 도핑을 하지 않은 박막이나 Nb가 첨가된 박막에 비해 매우 낮은 누설전류밀도를 나타내었으며, 이는 산화로 인한 산소공공의 감소, 이동 가능한 hole의 감소와 후열처리과정중 계면 및 입계의 산화로 Schottky 장벽에 높아진 결과로 판단된다.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 한국재료학회지
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• 제29권3호
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• pp.150-154
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• 2019

This study investigates the effect of MnO2 and CuO as acceptor additives on the microstructure and piezoelectric properties of $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$, which has a rhombohedral-tetragonal phase boundary composition. $MnO_2$ and CuO-added $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$ ceramics sintered at a relatively low temperature of $1020^{\circ}C$ show a pure perovskite phase with no secondary phase. As the addition of $MnO_2$ and CuO increases, the sintered density and grain size of the resulting ceramics increases. Due to the difference in the amount of oxygen vacancies produced by B-site substitution, Cu ion doping is more effective for uniform grain growth than Mn ion doping. The formation of oxygen vacancies due to B-site substitution of Cu or Mn ions results in a hardening effect via ferroelectric domain pinning, leading to a reduction in the piezoelectric charge coefficient and improvement of the mechanical quality factor. For the same amount of additive, the addition of CuO is more advantageous for obtaining a high mechanical quality factor than the addition of $MnO_2$.

• 한국재료학회지
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• 제32권3호
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• pp.132-138
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• 2022

Zintl phase Mg₃Sb₂ is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg₃Sb₂ has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg₃Sb₂ was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg₃Sb₂ was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg_3.8Sb_2-xSn_x (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg_3.8Sb_1.994Sn_0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

• Journal of Electrical Engineering and Technology
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• 제1권2호
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• pp.237-240
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• 2006

The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.166-170
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• 1991

An advanced on-resistance model of VDMOS devices in the low voltage regime is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping. It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for all ranges of cell spacings and breakdown voltages.