• Title/Summary/Keyword: logic gates

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Low Cost Circuit Design for a Sentence Speech Recognition (저가의 단 문장 음성 인식회로 설계)

  • 최지혁;홍광석
    • Proceedings of the IEEK Conference
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    • 2002.06d
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    • pp.365-368
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    • 2002
  • In this paper, we present a low cost circuit design for a sentence speech recognition. The basic circuit of the designed sentence speech recognizer is composed of resistor, capacitance, OP Amp, counter and logic gates. Through a sentence recognition experiment, we can find the effectiveness of the designed sentence recognition circuit

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Energy Efficient Processing Engine in LDPC Application with High-Speed Charge Recovery Logic

  • Zhang, Yimeng;Huang, Mengshu;Wang, Nan;Goto, Satoshi;Yoshihara, Tsutomu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.3
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    • pp.341-352
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    • 2012
  • This paper presents a Processing Engine (PE) which is used in Low Density Parity Codec (LDPC) application with a novel charge-recovery logic called pseudo-NMOS boost logic (pNBL), to achieve high-speed and low power dissipation. pNBL is a high-overdriven and low area consuming charge recovery logic, which belongs to boost logic family. Proposed Processing Engine is used in LDPC circuit to reduce operating power dissipation and increase the processing speed. To demonstrate the performance of proposed PE, a test chip is designed and fabricated with 0.18 2m CMOS technology. Simulation results indicate that proposed PE with pNBL dissipates only 1 pJ/cycle when working at the frequency of 403 MHz, which is only 36% of PE with the conventional static CMOS gates. The measurement results show that the test chip can work as high as 609 MHz with the energy dissipation of 2.1 pJ/cycle.

New Parity-Preserving Reversible Logic Gate (새로운 패리티 보존형 가역 논리게이트)

  • Kim, Sung-Kyoung;Kim, Tae-Hyun;Han, Dong-Guk;Hong, Seok-Hie
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.47 no.1
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    • pp.29-34
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    • 2010
  • This paper proposes a new parity-preserving reversible logic gate. It is a parity-preserving reversible logic gate, that is, the party of the outputs matches that of the inputs. In recent year, reversible logic gate has emerged as one of the important approaches for power optimization with its application in low CMOS design, quantum computing and nono-technology. We show that our proposed parity-preserving reversible logic gate is much better in terms of number of reversible logic gates, number of garbage-outputs and hardware complexity with compared ti the exiting counterpart.

Investigation into Electrical Characteristics of Logic Circuit Consisting of Modularized Monolithic 3D Inverter Unit Cell

  • Lee, Geun Jae;Ahn, Tae Jun;Lim, Sung Kyu;Yu, Yun Seop
    • Journal of information and communication convergence engineering
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    • v.20 no.2
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    • pp.137-142
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    • 2022
  • Monolithic three-dimensional (M3D) logics such as M3D-NAND, M3D-NOR, M3D-buffer, M3D 2×1 multiplexer, and M3D D flip-flop, consisting of modularized M3D inverters (M3D-INVs), have been proposed. In the previous M3D logic, each M3D logic had to be designed separately for a standard cell library. The proposed M3D logic is designed by placing modularized M3D-INVs and connecting interconnects such as metal lines or monolithic inter-tier-vias between M3D-INVs. The electrical characteristics of the previous and proposed M3D logics were simulated using the technology computer-aided design and Simulation Program with Integrated Circuit Emphasis with the extracted parameters of the previously developed LETI-UTSOI MOSFET model for n- and p-type MOSFETs and the extracted external capacitances. The area, propagation delay, falling/rising times, and dynamic power consumption of the proposed M3D logic are lower than those of previous versions. Despite the larger space and lower performance of the proposed M3D logic in comparison to the previous versions, it can be easily designed with a single modularized M3D-INV and without having to design all layouts of the logic gates separately.

Dynamics of All-Optical Switching in Bacteriorhodopsin and its Application to Optical Computing

  • Singh, C.P.;Roy, Sukhdev
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.317-319
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    • 2002
  • All-optical switching has been demonstrated in bacteriorhodopsin (bR) based on nonlinear intensity induced excited state absorption. The transmission of a cw probe laser beam at 410 nm corresponding to the peak absorption of M state through a bR film is switched by a pulsed pump laser beam at 570 nm that corresponds to the maximum initial 8 state absorption. The switching characteristics have been analyzed using the rate equation approach considering all the six intermediate states (B, K, L, M, N and 0) in the bR photocycle. The switching characteristics are shown to be sensitive to life time of the M state, absorption cross-section of the 8 state at probe wavelength ($\sigma$ $\_$Bp/) and peak pump intensity. It has been shown that the probe laser beam can be completely switched off (100 % modulation) by the pump laser beam at relatively low pump powers, for $\sigma$$\_$Bp/ = O. The switching characteristics have been used to design all-optical NOT, OR, AND and the universal NOR and NAND logic gates for optical computing with two pulsed pump laser beams.

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The Results Comparison of Measurement and Simulations in ISL(Integrated Schottky Logic) Gate (ISL 게이트에서 측정과 시뮬레이션의 결과 비교)

  • 이용재
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.1
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    • pp.157-165
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    • 2001
  • We analyzed the electrical characteristics of platinum silicide schottky junction to develope the voltage swing in Integrated Schottky Logic gates, and simulated the characteristics with the programs in this junctions. Simulation programs for analytic characteristics are the Medichi tool for device structure, Matlab for modeling and SUPREM V for fabrication process. The silicide junctions consist of PtSi and variable silicon substrate concentrations in ISL gates. Input parameters for simulation characteristics were the same conditions as process steps of the device farications process. The analitic electrical characteristics were the turn-on voltage, saturation current, ideality factor in forward bias, and has shown the results of breakdown voltage between actual characteristics and simulation characteristics in reverse bias. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height were decreased but saturation current and ideality factor were increased by substrates increased concentration variations.

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An I/O Interface Circuit Using CTR Code to Reduce Number of I/O Pins (CTR 코드를 사용한 I/O 핀 수를 감소 시킬 수 있는 인터페이스 회로)

  • Kim, Jun-Bae;Kwon, Oh-Kyong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.1
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    • pp.47-56
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    • 1999
  • As the density of logic gates of VLSI chips has rapidly increased, more number of I/O pins has been required. This results in bigger package size and higher packager cost. The package cost is higher than the cost of bare chips for high I/O count VLSI chips. As the density of logic gates increases, the reduction method of the number of I/O pins for a given complexity of logic gates is required. In this paper, we propose the novel I/O interface circuit using CTR (Constant-Transition-Rate) code to reduce 50% of the number of I/O pins. The rising and falling edges of the symbol pulse of CTR codes contain 2-bit digital data, respectively. Since each symbol of the proposed CTR codes contains 4-bit digital data, the symbol rate can be reduced by the factor of 2 compared with the conventional I/O interface circuit. Also, the simultaneous switching noise(SSN) can be reduced because the transition rate is constant and the transition point of the symbols is widely distributed. The channel encoder is implemented only logic circuits and the circuit of the channel decoder is designed using the over-sampling method. The proper operation of the designed I/O interface circuit was verified using. HSPICE simulation with 0.6 m CMOS SPICE parameters. The simulation results indicate that the data transmission rate of the proposed circuit using 0.6 m CMOS technology is more than 200 Mbps/pin. We implemented the proposed circuit using Altera's FPGA and confimed the operation with the data transfer rate of 22.5 Mbps/pin.

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A Simple Static Noise Margin Model of MOS CML Gate in CMOS Processes

  • Jeong, Hocheol;Kang, Jaehyun;Lee, Kang-Yoon;Lee, Minjae
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.370-377
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    • 2017
  • This paper presents a simple noise margin (NM) model of MOS current mode logic (MCML) gates especially in CMOS processes where a large device mismatch deteriorates logic reliability. Trade-offs between speed and logic reliability are discussed, and a simple yet accurate NM equation to capture process-dependent degradation is proposed. The proposed NM equation is verified for 130-nm, 110-nm, 65-nm, and 40-nm CMOS processes and has errors less than 4% for all cases.

Logic Circuit Fault Models Detectable by Neural Network Diagnosis

  • Tatsumi, Hisayuki;Murai, Yasuyuki;Tsuji, Hiroyuki;Tokumasu, Shinji;Miyakawa, Masahiro
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2003.09a
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    • pp.154-157
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    • 2003
  • In order for testing faults of combinatorial logic circuit, the authors have developed a new diagnosis method: "Neural Network (NN) fault diagnosis", based on fm error back propagation functions. This method has proved the capability to test gate faults of wider range including so called SSA (single stuck-at) faults, without assuming neither any set of test data nor diagnosis dictionaries. In this paper, it is further shown that what kind of fault models can be detected in the NN fault diagnosis, and the simply modified one can extend to test delay faults, e.g. logic hazard as long as the delays are confined to those due to gates, not to signal lines.

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