• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.332-335
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• 2008

PMMA light guiding plate with nano pattern was fabricated by nano imprint lithography method. A silicon mold for electroplating of nickel was fabricated by conventional photolithography process. A nickel stamp for nano imprint lithography was fabricated by electroplating process using silicon mold. The nano imprint lithography was performed on PMMA plate at $140^{\circ}C$ under pressure of 20kN. The nano pattern on PMMA plate was investigated using FE-SEM. It is shown that the patterns were well transferred for several steps and the nano imprint lithography method could be applied for fabricating patterns of light guiding plate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.196-198
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• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.269-274
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• 1999

As the semiconductor industry enters the next century, we are facing to the technological changes and challenges. Optical lithography has driven by the miniaturisation of semiconductor devices and has been accompanied by an increase in wafer productivity and performance through the reduction of the IC image geometries. In the last decade, DRAM(Dynamic Random Access Memories) have been quadrupoling in level of integration every two years. Korean chip makers have been produced the memory devices, mainly DRAM, which are the driving force of IC＇s(Integrated Circuits) development and are the technology indicator for advanced manufacturing. Therefore, Korean chip makers have an important position to predict and lead the patterning technology. In this paper, we will be discussed the limitations of the optical lithography, such as KrF and ArF. And, post optical lithography technology, such as E-beam lithography, EUV and E-beam Projection Lithography shall be introduced.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.36-40
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• 2009

Development of maskless lithography techniques can provide a potential solution for the photomask cost issue. Furthermore, it could open a market for small scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with sub-micrometer resolution, it is attractive to use this technique for maskless lithography. As a femtosecond laser has recently been developed, both of high power and high photon density are easily obtained. The high photon density results in photopolymerization of photoresist whose absorption spectrum is shorter than that of the femtosecond laser. The maskless lithography using the two-photon absorption (TPA) makes micro structures. In this paper, we present a femtosecond laser direct write lithography for submicron PR patterning, which show great potential for future application.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1160-1163
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• 1999

In this study, we developed FE-tip lithography system that could apply to multi-tip system and did lithography using FE-tip. The software that control FE-tip lithography system, was proposed for acquiring more adaptive data to compensate the effect of fluctuation. We found that the fluctuation effect was reduced. The minimum line width was related to applied voltage and we observed a movement of Z-axis piezo stage to correct the error of this system. When FE current was 5nA, scanning speed was $3{\mu}m/sec$ and applied voltage was 200V, we made a line pattern which had minimum line width of 614 nm. If we reduce applied voltage to several decades and increase scanning speed to $20{\mu}m/sec$, it is possible to set the minimum line width of 100 nm. The proposed system can be easily applied to multi FE-tip lithography system.

• Journal of Biomedical Engineering Research
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• v.30 no.6
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• pp.453-460
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• 2009

In this review paper, concepts in optofluidics are applied to an advanced manufacturing technology based on self-assembled microparts. The "optical" aspect of optofluidics will be described in the context of photolithography, and the "fluidic" aspect will be discussed in the context of self-assembly. First, optofluidic maskless lithography will be introduced as a dynamic fabrication method to generate microparticles in microfluidic channels. Next, the history and application of optofluidic lithography will be presented.

• Journal of the Optical Society of Korea
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• v.14 no.3
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• pp.266-276
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• 2010

In the present study, an optical system is proposed for maskless lithography using a digital micromirror device (DMD). The system consists of an illumination optical system, a DMD, and a projection lens system. The illumination optical system, developed for 95% uniformity, is composed of fly's eye lens plates, a 405 nm narrow band pass filter (NBPF), condensing lenses, a field lens and a 250W halogen lamp. The projection lens system, composed of 8 optical elements, is developed for 4 ${\mu}m$ resolution. The proposed system plays a role of an optical engine for PCB and/or FPD maskless lithography. Furthermore, many problems arising from the presence of masks in a conventional lithography system, such as expense and time in fabricating the masks, contamination by masks, disposal of masks, and the alignment of masks, may be solved by the proposed system. The proposed system is verified by lithography experiments which produce a line pattern with the resolution of 4 ${\mu}m$ line width.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.330-333
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• 2005

The fabrication of mold fur nano imprint lithography (NIL) is experimentally reported using the scanning probe lithography (SPL) technique, instead of the conventional I-beam lithography technique. The nanometer scale patterning structure is fabricated by the localized generation of oxide patterning on the silicon (100) wafer surface with a thin oxide layer, The fabrication method is based on the contact mode of scanning probe microscope (SPM) in air, The precision cleaning process is also performed to reach the low roughness value of $R_{rms}=0.084 nm$, which is important to increase the reproducibility of patterning. The height and width of the oxide dot are generated to be 15.667 nm and 209.5 nm, respectively, by applying 17 V during 350 ms.

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.109-114
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• 1991

좋은(sub=micron) 분해능을 갖는 Photoresist film의 방법에 의한 Micro-Lithography의 발달은 반도체, Electro-Optic 등의 첨단산업에 큰 기여를 하였다. 본 내용은 이러한 PR을 이용한 Lithography System의 광학적인 원리에 대해 소개하고자 한다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.633-636
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• 2005

Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. As with other nanoimprint methods, ultraviolet-nanoimprint lithography (UV-NIL) resolution appears to be limited only by template resolution, and offers a significant cost of ownership reduction when compared to other next generation lithography (NGL) methods such as EUVL and 157 nm lithography. The purpose of this paper is to suggest optimum values of control parameters of Imprio 100 manufactured by Molecular Imprint, Inc., which is the first commercially available UV-NIL tool, for sound nanoimprint. UV-NIL experiments were performed on Imprio 100 to find dispensing recipe for avoiding air entrapment. Dispensing recipe related to residual layer thickness and uniformity was optimized and 40 nm thick residual layer was achieved.