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Femtosecond Laser Lithography for Maskless PR Patterning  

Sohn, Ik-Bu (Advanced Photonics Research Institute, GIST)
Ko, Myeong-Jin (Advanced Photonics Research Institute, GIST)
Kim, Young Seop (Advanced Photonics Research Institute, GIST)
Noh, Young-Chul (Advanced Photonics Research Institute, GIST)
Publication Information
Journal of the Korean Society for Precision Engineering / v.26, no.6, 2009 , pp. 36-40 More about this Journal
Abstract
Development of maskless lithography techniques can provide a potential solution for the photomask cost issue. Furthermore, it could open a market for small scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with sub-micrometer resolution, it is attractive to use this technique for maskless lithography. As a femtosecond laser has recently been developed, both of high power and high photon density are easily obtained. The high photon density results in photopolymerization of photoresist whose absorption spectrum is shorter than that of the femtosecond laser. The maskless lithography using the two-photon absorption (TPA) makes micro structures. In this paper, we present a femtosecond laser direct write lithography for submicron PR patterning, which show great potential for future application.
Keywords
Femtosecond Laser Ablation; Photoresist; PR Patterning; Maskless Lithography;
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Times Cited By KSCI : 2  (Citation Analysis)
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