Femtosecond Laser Lithography for Maskless PR Patterning

펨토초 레이저를 이용한 미세 PR 패터닝

  • 손익부 (광주과학기술원 고등광기술연구소) ;
  • 고명전 (광주과학기술원 고등광기술연구소) ;
  • 김영섭 (광주과학기술원 고등광기술연구소) ;
  • 노영철 (광주과학기술원 고등광기술연구소)
  • Published : 2009.06.01

Abstract

Development of maskless lithography techniques can provide a potential solution for the photomask cost issue. Furthermore, it could open a market for small scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with sub-micrometer resolution, it is attractive to use this technique for maskless lithography. As a femtosecond laser has recently been developed, both of high power and high photon density are easily obtained. The high photon density results in photopolymerization of photoresist whose absorption spectrum is shorter than that of the femtosecond laser. The maskless lithography using the two-photon absorption (TPA) makes micro structures. In this paper, we present a femtosecond laser direct write lithography for submicron PR patterning, which show great potential for future application.

Keywords

References

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