• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.260-264
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• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.959-965
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• 1988

Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.83-89
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• 1999

A Unified model for the alpha-particle-induced charge collection has been developed. By accounting for funneling and diffusion charges separately, new model accurately describes the dependence of collected charge on junction size, junction bias, injection energy, injection angle, injection point, and trench oxide depth.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.51-58
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• 1995

Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.37-47
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• 1997

Utilizing 2-dimensional device simulations incorporating lattic eheating models, we analyzed in detail the DC breakdown characterisics of NMOS trasistors with different structures, which are commonly used as ESD protection transistors. The mechanism leading to device failure resulting from electrostatic discharge was explained by analyzing the 1st and 2nd breakdown characteristics of LDD devices. Also a criteria for more robust designs of NMOS transistor structures against ESD was suggested by examining the characteristics changes with changes in structural parameters such as the LDD doping concentration, the drain junction depth, the distance between source/drain contacts, and the source junction area.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.1-3
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• 2002

Single Josephson junctions, which are of cross type, of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated under several oxidation conditions to Investigate controllabilities of critical current density (Jc) with the standard KRISS processes. Considering that the self-field effect suppresses the observed critical current (Ice) at high Jc region, we could reasonably estimate Jc values from I-V observations. The dependence of the obtained Jc as a function of exposure, which is equal to pressure (P) times time (t), was well fitted to a curve of Jc ~ (Pt)-0.34. The maximum Jc value at the controllability margin was found to be 3 kA/cm$^2$with the current equipment set up.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2234-2237
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• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• Journal of Korean Tunnelling and Underground Space Association
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• v.21 no.1
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• pp.115-126
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• 2019

Recently, in order to solve the traffic congestion in urban areas and to improve the peripheral environment, research on the design and construction technology development of great depth underground double-deck tunnel is under way by using the underground space in the urban area. The network type double-deck tunnel is in the form of an intersection with a small cross section and a steep slope as per construction at the base of a flatland, so that the fire smoke spreads rapidly in case of fire, which is expected to cause damage of human life. Therefore, this study is analyzed the delay effect of fire smoke diffusion according to the installation and non - installation of delay system for fire smoke diffusion at the intersection. Fire fumes were delayed up to 270 seconds when the delay system for fire smoke diffusion was installed at the intersection and it is analyzed that the greater the operating area of the delay system for fire smoke diffusion, the more preventable the damage of human life of the intersection.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.11
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• pp.444-449
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• 2016

The main objective of this work is to experimentally investigate the effect of angle variation and intrusion depth of channels on the distribution of two-phase flow at header-channel junctions. The dimensions of the header and the channels in cross-section were fixed at $16mm{\times}16mm$ and $12mm{\times}1.8mm$, respectively. Air and water were used as the test fluids. Two different header-channel positions were tested : a vertical header with horizontal channels (case VM-HC) and a horizontal header with horizontal channels (case HM-HC). In all cases, the intrusion depths of the channels are 0 mm, 2 mm, and 4 mm. For the case of the intrusion depth of VM-HC, the flow distribution became more uniform. However, the intrusion depth negatively affected the flow distribution for the case of HM-HC because liquid separation delay occurred.