Open-Tube에서 Zn확산을 이용한 GaAs에의 $p^+$층 형성

Formation of $P^+-Layer$ in GaAs Using the Open-Tube Diffusion of Zn

Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.