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Approximate Equations and Sensitivity for Breakdown Voltages of Cylindrical PN Junctions in Power Semiconductor Devices  

Yun, Jun-Ho (아주대학 전자공학과)
Kim, Hae-Mi (아주대학 전자공학과)
Seo, Hyeon-Seok (아주대학 전자공학과)
Jo, Jung-Yol (아주대학 전자공학과)
Choi, Yearn-Ik (아주대학 전자공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.57, no.12, 2008 , pp. 2234-2237 More about this Journal
Abstract
Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.
Keywords
Breakdown Voltage; Cylindrical PN Junction; Sensitivity; Junction Depth; Power Semiconductor Devices;
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