• JSTS:Journal of Semiconductor Technology and Science
• /
• 제10권4호
• /
• pp.260-264
• /
• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• 대한전자공학회논문지
• /
• 제25권8호
• /
• pp.959-965
• /
• 1988

Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

• 전자공학회논문지D
• /
• 제36D권1호
• /
• pp.83-89
• /
• 1999

알파 입자의 입사에 의하여 생성된 전하중 접합으로 수집되는 전하량을 예측할 수 있는 통합 모델을 개발하였다. 이 모델은 funneling과 diffusion에 의한 전하 수집 현상을 모두 고려함으로써 접합 면적, 접합 전압 알파 입자의 입사 에너지, 입사 각도, 입사점의 위치, 그리고 접합간 격리에 사용되는 트랜치 산화막 깊이의 변화에 따른 수집전하량의 변화를 정확하게 예측할 수 있다.

• 전자공학회논문지A
• /
• 제32A권6호
• /
• pp.51-58
• /
• 1995

Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.

• 전자공학회논문지D
• /
• 제34D권11호
• /
• pp.37-47
• /
• 1997

Utilizing 2-dimensional device simulations incorporating lattic eheating models, we analyzed in detail the DC breakdown characterisics of NMOS trasistors with different structures, which are commonly used as ESD protection transistors. The mechanism leading to device failure resulting from electrostatic discharge was explained by analyzing the 1st and 2nd breakdown characteristics of LDD devices. Also a criteria for more robust designs of NMOS transistor structures against ESD was suggested by examining the characteristics changes with changes in structural parameters such as the LDD doping concentration, the drain junction depth, the distance between source/drain contacts, and the source junction area.

• 한국초전도ㆍ저온공학회논문지
• /
• 제4권1호
• /
• pp.1-3
• /
• 2002

Single Josephson junctions, which are of cross type, of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated under several oxidation conditions to Investigate controllabilities of critical current density (Jc) with the standard KRISS processes. Considering that the self-field effect suppresses the observed critical current (Ice) at high Jc region, we could reasonably estimate Jc values from I-V observations. The dependence of the obtained Jc as a function of exposure, which is equal to pressure (P) times time (t), was well fitted to a curve of Jc ~ (Pt)-0.34. The maximum Jc value at the controllability margin was found to be 3 kA/cm$^2$with the current equipment set up.

• 전기학회논문지
• /
• 제57권12호
• /
• pp.2234-2237
• /
• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

• 한국표면공학회지
• /
• 제47권5호
• /
• pp.227-232
• /
• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 한국터널지하공간학회 논문집
• /
• 제21권1호
• /
• pp.115-126
• /
• 2019

최근 도심지 차량 정체 해소와 주변환경을 개선하기 위하여 도심지 지하공간을 활용하는 대심도 복층터널 설계 및 시공 기술개발 연구가 진행되고 있으며, 네트워크형 복층터널은 단면이 작고, 평지 하부에 시공됨에 따라 입 출구의 경사가 가파른 특징이 있는 교차로 형태를 가지며 화재발생시 화재연기가 매우 빠르게 전파되어 인명피해 발생이 우려된다. 따라서 본 연구에서는 교차로에 화재연기 확산지연장치를 설치한 경우와 미설치된 경우에 대하여 화재연기 확산지연효과를 분석하였다. 화재연기 확산지연장치를 교차로에 설치하였을 시 화재발생 후 270초까지 화재연기가 지연되었으며, 화재연기 확산지연장치의 차단면적이 커질수록 인명피해 예방에 도움이 될 것으로 분석되었다.

• 설비공학논문집
• /
• 제28권11호
• /
• pp.444-449
• /
• 2016

The main objective of this work is to experimentally investigate the effect of angle variation and intrusion depth of channels on the distribution of two-phase flow at header-channel junctions. The dimensions of the header and the channels in cross-section were fixed at $16mm{\times}16mm$ and $12mm{\times}1.8mm$, respectively. Air and water were used as the test fluids. Two different header-channel positions were tested : a vertical header with horizontal channels (case VM-HC) and a horizontal header with horizontal channels (case HM-HC). In all cases, the intrusion depths of the channels are 0 mm, 2 mm, and 4 mm. For the case of the intrusion depth of VM-HC, the flow distribution became more uniform. However, the intrusion depth negatively affected the flow distribution for the case of HM-HC because liquid separation delay occurred.