• Title/Summary/Keyword: ion

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Ion Pump Design for Improved Pumping Speed at Low Pressure

  • Paolini, Chiara;Audi, Mauro;Denning, Mark
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.108-115
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    • 2016
  • Even if ion pumps are widely and mostly used in ultra-high vacuum (UHV) conditions, virtually every existing ion pump has its maximum pumping speed around 1E-6 mbar (1E-4 Pa). Discharge intensity in the ion pump Penning cell is defined as the current divided by pressure (I/P). This quantity reflects the rate of cathode bombardment by ions, which underlies all of the various pumping mechanisms that occur in ion pumps (chemisorption on sputtered material, ion burial, etc.), and therefore is an indication of pumping speed. A study has been performed to evaluate the influence of magnetic fields and cell dimensions on the ion pump discharge intensity and consequently on the pumping speed at different pressures. As a result, a combination of parameters has been developed in order to design and build an ion pump with the pumping speed peak shifted towards lower pressures. Experimental results with several different test set-ups are presented and a prototype of a new 200 l/s ion pump with the maximum pumping speed in the 1E-8 mbar (1E-6 Pa) is described. A model of the system has also been developed to provide a framework for understanding the experimental observations.

Preparation of Quaternary Ammonium Salt Derivatives Supported on Silica gel and Its Ion Exchange Characteristics (실리카겔에 담지된 4급암모늄염 유도체의 합성 및 이온교환 특성)

  • Ahn, Beom-Shu
    • Journal of the Korean Applied Science and Technology
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    • v.25 no.1
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    • pp.65-72
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    • 2008
  • The ion exchangers supported on silica gel containing primary, secondary, or tertiary amine groups show a behaviour that is weakly acidic, while the quaternary salts are strongly acidic. These properties change according to the hydrophilicities of the modifier functional groups. Ammonium salt derivatives supported on silica gel were prepared from silica modified with 3-Aminopropyltriethoxysiliane and N-3-(Trimethoxysilyl)propylehtylene diamine. The preparation and the ion exchange properties of two systems were discussed. Two systems have different hydrophilicities and contain ammonium chloride derivatives of 3-amminopropyltriethoxysilane and N-3-(triehtoxysilyl)propyl ethylene diamine supported on silica gel, $SA^+/Cl^-$ and $SA^+/Cl^-$, respectively. The high affinity to perchlorate ion presented by the $SA^+/Cl^-$ through the equilibrium studies of ion exchange led us to its application as an ion selective electrode for the perchlorate ion. The determination of the perchlorate ion in the presence of other anions and in complexes is very difficult. Few analytical methods are available and most of them are indirect. Both materials showed potential use as an ion exchanger; they are thermically stable, achieve equilibrium rapidly in the presence of suitable exchanger ions, and are easily recovered.

Extraction Equilibria and Solvent Sublation for Determination of Ultra Trace Bi(Ⅲ), In(Ⅲ) and TI(Ⅲ) in Water Samples by Ion-Pairs of Metal-2-Naphthoate Complexes and Tetrabutylammonium Ion

  • Kim, Young-Sang;Choi, Yoon-seok;Lee, Won
    • Bulletin of the Korean Chemical Society
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    • v.23 no.10
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    • pp.1381-1391
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    • 2002
  • The solvent sublation using ion pairs of metal-2-naphthoate(2-HNph) and tetrabutyl ammonium ($TBA^+$) ion has been studied for the concentration and determination of ultra trace Bi(III), In(III) and Tl(Ⅲ) ions in water samples. The partition coefficients ($K_p$) and the extraction percentages of 2-HNph and the ion pairs to methyl isobutyl ketone (MIBK) were obtained as basic data. After the ion pair $TBA^+$·M$(Nph)_4^-$ was formed in water samples, the analytes were concentrated by the solvent sublation and the elements were determined by GF-AAS. The pH of the sample solution, the amount of the ligand and counter ion added and stirring time were optimized for the efficient formation of the ion pair. The type and amount of optimum surfactant, bubbling time with nitrogen and the type of solvent were investigated for the solvent sublation as well. 10.0 mL of 0.1 M 2-HNph and 2.0 mL of 0.1 M $TBA^+$ were added to a 1.0 L sample solution at pH 5.0. After 2.0 mL of 0.2%(w/v) Triton X-100 was added, the ion pairs were extracted into 20.0 mL MIBK in a flotation cell by bubbling. The analytes were determined by a calibration curve method with measured absorbances in MIBK, and the recovery was 80-120%.

Continuous ion-exchange membrane electrodialysis of mother liquid discharged from a salt-manufacturing plant and transport of Cl- ions and SO42- ions

  • Tanaka, Yoshinobu;Uchino, Hazime;Murakami, Masayoshi
    • Membrane and Water Treatment
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    • v.3 no.1
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    • pp.63-76
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    • 2012
  • Mother liquid discharged from a salt-manufacturing plant was electrodialyzed at 25 and $40^{\circ}C$ in a continuous process integrated with $SO_4{^{2-}}$ ion low-permeable anion-exchange membranes to remove $Na_2SO_4$ and recover NaCl in the mother liquid. Performance of electrodialysis was evaluated by measuring ion concentration in a concentrated solution, permselectivity coefficient of $SO_4{^{2-}}$ ions against $Cl^-$ ions, current efficiency, cell voltage, energy consumption to obtain one ton of NaCl and membrane pair characteristics. The permselectivity coefficient of $SO_4{^{2-}}$ ions against $Cl^-$ ions was low enough particularly at $40^{\circ}C$ and $SO_4{^{2-}}$ transport across anion-exchange membranes was prevented successfully. Applying the overall mass transport equation, $Cl^-$ ion and $SO_4{^{2-}}$ ion transport across anion-exchange membranes is evaluated. $SO_4{^{2-}}$ ion transport number is decreased due to the decrease of electro-migration of $SO_4{^{2-}}$ ions across the anion-exchange membranes. $SO_4{^{2-}}$ ion concentration in desalting cells becomes higher than that in concentration cells and $SO_4{^{2-}}$ ion diffusion is accelerated across the anion-exchange membranes from desalting cells toward concentrating cells.

Study of ion beam shaping of an anode-type ion source coupled with a Whenelt mask

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.4
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    • pp.70-74
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    • 2018
  • We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.

Characteristics of Critical Pressure for a Beam Shape of the Anode Type ion Beam Source

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.4
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    • pp.65-69
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    • 2018
  • We studied the critical pressure characteristics of an anode type ion beam source driven by both charge repulsion and diffusion mechanism. The critical pressure $P_{crit}$ of the diffusion type ion beam source was linearly decreased from 2.5 mTorr to 0.5 mTorr when the gas injection was varied in 3~10 sccm, while the $P_{crit}$ of the charge repulsion ion beam source was remained at 3.5 mTorr. At the gas injection of 10 sccm, the range of having normal beam shape in the charge repulsion ion beam source was about 6.4 times wider than that in the diffusion type ion beam source. An impurity of Fe 2p (KE = 776.68 eV) of 12.88 at. % was observed from the glass surface treated with the abnormal beam of the charge repulsion type ion beam source. The body temperature of the diffusion type ion beam source was observed to increase rapidly at the rate of $1.9^{\circ}C/min$ for 30 minutes and to vary slowly at the rate of $0.1^{\circ}C/min$ for 200 minutes for an abnormal beam and normal beam, respectively.

Performance Analysis and Modifications of Axi-Symmetric Electrostatic Lens for Sub-Micron Ion Beam System (Sub-micron의 이온빔 직경을 가지는 축대칭 정전렌즈의 성능 해석 및 개선)

  • 이종현;배남진;김보우
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.9
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    • pp.1348-1358
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    • 1989
  • We analyzed electrostatic lens with axi-symmetic configurations using the analytic equation for a single apertured lens. The developed computer code afforded to estimate ion optical properties such as ion trajectories, aberrations and ion beam diameters, and was found to have advantages of a shorter calculation time. The calculated ion optical properties for several types of electrostatic lens were in good agreement with Burghard's ones and it was seem that 20% reduction of ion beam diameter could be obtained by the change of aperture diameters.

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Analysis of Time-Dependent Behavior of Plasma Sheath using Ion Fluid Model (이온유체방정식을 이용한 Plasma Sheath 시변 해석)

  • Lee, Ho-Jun;Lee, Hae-June
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2173-2178
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    • 2007
  • Dynamics of plasma sheath was analyzed using simple ion fluid model with poison equation. Incident ion current, energy, potential distribution and space charge density profile were calculated as a function of time. The effects of initial floating sheath on the evolution of biased sheath were compared with ideal matrix sheath. The effects of finite rising time of pulse bias voltage on the ion current and energy was studied. The influence of surface charging on the evolution of sheath was also investigated

Cross-Sectional Transmission Electron Microscopy Specimen Preparation Technique by Backside Ar Ion Milling

  • Yoo, Jung Ho;Yang, Jun-Mo
    • Applied Microscopy
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    • v.45 no.4
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    • pp.189-194
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    • 2015
  • Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

Localization of Ultra-Low Frequency Waves in Multi-Ion Plasmas of the Planetary Magnetosphere

  • Kim, Eun-Hwa;Johnson, Jay R.;Lee, Dong-Hun
    • Journal of Astronomy and Space Sciences
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    • v.32 no.4
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    • pp.289-295
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    • 2015
  • By adopting a 2D time-dependent wave code, we investigate how mode-converted waves at the Ion-Ion Hybrid (IIH) resonance and compressional waves propagate in 2D density structures with a wide range of field-aligned wavenumbers to background magnetic fields. The simulation results show that the mode-converted waves have continuous bands across the field line consistent with previous numerical studies. These waves also have harmonic structures in frequency domain and are localized in the field-aligned heavy ion density well. Our results thus emphasize the importance of a field-aligned heavy ion density structure for ultra-low frequency wave propagation, and suggest that IIH waves can be localized in different locations along the field line.