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http://dx.doi.org/10.9729/AM.2015.45.4.189

Cross-Sectional Transmission Electron Microscopy Specimen Preparation Technique by Backside Ar Ion Milling

Yoo, Jung Ho (Department of Measurement & Analysis, National Nanofab Center)
Yang, Jun-Mo (Department of Measurement & Analysis, National Nanofab Center)

Publication Information

Applied Microscopy / v.45, no.4, 2015 , pp. 189-194 More about this Journal

Abstract

Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$ ).

Keywords

Backside Ar ion milling; Curtaining effect; Transmission electron microscopy specimen preparation; Electron holography; Focused ion beam;

Citations & Related Records

Reference

1	Abrahams M S and Buiocchi C J (1974) Cross-sectional specimens for transmission electron microscopy. J. Appl. Phys. 45, 3315. DOI
2	Barna A, Pecz B, and Menyhard M (1999) TEM sample preparation by ion milling/ amorphization. Micron 30, 267-276. DOI
3	Chew N G and Cullis A G (1987) The preparation of transmission electron microscope specimens from compound semiconductors by ion milling. Ultramicroscopy 23, 175-198. DOI
4	Formanek P and Bugiel E (2006) Specimen preparation for electron holography of semiconductor devices. Ultramicroscopy 106, 365-375. DOI
5	Giannuzzi L A and Stevie F A (1999) A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197-204. DOI
6	John C B and Robert S (1984) The preparation of cross-section specimens for transmission electron microscopy. J. Electron Microsc. Tech. 1, 53-61. DOI
7	Midgley P A (2001) An introduction to off-axis electron holography. Micron 32, 167-184. DOI
8	Mkhoyan K A, Baston P E, Cha J, Schaff W J, and Silcox J (2006) Direct determination of local lattice polarity in crystals. Science 312, 1354, supplementary material. DOI
9	Okuno H, Takeguchi M, Mitsuishi K, Guo X J, and Furuya K (2008) Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis. J. Electron Microsc. 57, 1-5.
10	Orloff J, Utlaut M, and Swanson L (2003) High Resolution Focused Ion Beams: FIB and Its Applications (Kluwer Academic/Plenum Publishers, New York).
11	Preble E A, McLean H A, Kiesel S M, Miraglia P, Albrecht M, and Davis P F (2002) Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiC-based, cross-sectional TEM samples. Ultramicroscopy 92, 256-271.
12	Stevie F A, Shane T C, Kahora P M, Hull R, Bahnck D, Kannan V C, and David E (1995) Applications of focused ion beams in microelectronics production, design and development. Surf. Interface Anal. 23, 61-68. DOI
13	Traeholt C, Wen J G, Svetchnikov V, Delsing V, and Zandbergen H W (1993) A reliable method of TEM cross section specimen preparation of YBCO films on various substrates. Physica C 306, 318-328.
14	Yoo J H, Yang J M, Shaislamov U, Ahn C W, Hwang W J, Park J K, Park C M, Hong S B, Kim J J, and Shindo D (2008) Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside-ion milling. J. Electron Microsc. 57, 13-18.