• 한국해양학회지
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• 제17권2호
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• pp.51-58
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• 1982

1965년 부터 1979년 까지 한국 동해에서 관측된 온도 및 염분 자료를 이용하여 밀도역전 현상을 조사하였다.그 결과 밀도역전 여름보다 겨울에 많은 것으로 나타났다.겨울에는 동해 전 해역의 절반정도에서 역전층이 형성되며,여름에는 대한해엽의 일부해협에서만 일어난다.또한 역전층의 깊이는 보통 표층에서 수십 m까지이다.이와같은 역전현상은 표층 Ekman수송에 의한 냉수의 이류로 설명 할 수 있다. 즉,겨울에는 북서 계절풍에 의한 표층 냉수의 남하로 인하여 생기며,여름에는 남서퓽에 의해서 연안 근처에서 용승된 저층 냉수가 대한해협 쪽으로 공급되어 일어난다고 생각된다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.201-206
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• 2004

We have performed computer simulation and experiment to obtain electro-optic characteristics of reflective hybrid aligned nematic (R-HAN) cell driven by fringe field, in which the cell consists of polarizer, optical compensation film, LC layer and reflector. Conventional R-HAN cell driven by fringe field using only the LC layer shows high wavelength dispersion at dark-state and thus viewing angle characteristic is strongly wavelength-dependent. In order to improve this demerit, we added one optical compensation film to conventional R-HAN cell. The display with optimized cell parameters shows low wavelength dispersion at dark-state and exhibits a wide viewing angle without the occurrence of grey scale inversion over a wide range of viewing angles and the contrast ratio greater than 5 over exists about 120$^{\circ}$ in vortical direction and 160$^{\circ}$in horizontal direction. Experimental results show good agreements with theoretical results and fast response time.

• 대한전자공학회논문지
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• 제27권11호
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• pp.49-54
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• 1990

본 논문에서는 LDD(lightly doped drain)구조를 갖는 짧은 채널 MOSFET에서의 기생저항의 게이트 전압 의존도에 대한 모형을 제시하였다. 게이트 전극 밑에 위치한 LDD 영역에서는 게이트 전압에 의해 준 이차원적인 축적층(quasi two-dimensional accumulation layer)이 형성된다. 소오스 측 LDD 기생저항을 축적층의 저항과 벌크 LDD 저항의 병렬 연결로 취급하였으며 별크 LDD 저항은 채널의 반전층 끝으로부터 ${n^+}$영역의 경계까지 퍼짐 저항으로 근사하였다. 그리고 접합에서의 도우핑 농도 구배가 LDD 저항에 미치는 영향이 토의하였다. 본 모형의 결과로 선형 영역에서는 LDD 저항이 게이트 전압의 증가에 따라 감소하고, 포화영역에서는 채널과 LDD에서 속도포화를 고려한 결과, 게이트 전압에 대해 준 일차적으로 증가하는 것으나 나타나 발표된 실험결과들과 일치하였다.

• 자원환경지질
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• 제18권2호
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• pp.151-157
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• 1985

Events detected by the KIER microearthquake network operated in the Southern Part of Korea for 265 days in 1982~1984 were reviewed, and some of them were identified to be a dynamite explosion from several construction sites. The purpose of the present work is to determine the crustal structure of the Southern Korea using the time-destance data obtained from such explosion seismic records. The time·distance data can be well explained by a crustal model composed of four horizontal layers of which thickness, p and s-wave velocity ($V_p$ and $V_s$) are characterized as follows. 1st layer (surface) ; 0~2km, $V_p=5.5km/sec$, $V_s=3.3km/sec$ 2nd layer (upper crust) ; 2~15km, $V_p=6.0km/sec$, $V_s=3.5km/sec$ 3rd layer (lower crust) ; 15~29km, $V_p=6.6km/sec$, $V_s=3.7km/sec$ 4th layer (upper mantle) ; 29km~ , $V_p=7.7km/sec$, $V_s=4.3km/sec$ The relatively shallow crust·mantle boundary and low $P_n$ velocity compared with the mean values for stable intraplate region are noteworthy. Supposedely, it is responsible for the high heat flow in the South-eastern Korea or an anomalous subterranean mantle. The mean $V_p/V_s$ ratio calculated from the relation between p-wave arrival and s-p arrival times appears to be 1.735 which is nearly equivalent to the elastic medium of ${\lambda}={\mu}$. However, the ratio tends to be slightly larger with the depth. The ratio is rather high compared with that of the adjacent Japanese Island, and the fact suggests that the underlying crust and upper mantle in this region are more ductile and hence the earthquake occurrences are apt to be interrupted. As an alternative curstal model, a seismic velocity structure in which velocities are successively increased with the depth is also proposed by the inversion of the time·distance data. With the velocity profile, it is possible to calculate a travel time table which is appropriate to determine the earthquake parameters for the local events.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1925-1927
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• 1999

At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

• 한국산업정보학회논문지
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• 제6권3호
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• pp.123-127
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• 2001

CMOS 트랜지스터의 등가회로모델 파라미터 $C_{gs}$ 의 예측방법이 CMOS 트랜지스의 반전층내의 유동전하량 계산과 전하유도 특성에 의해 제안되었다. 이 $C_{gs}$ 파라미터는 MOS 트랜지스터의 RF대역의 차단주파수를 결정하고 또한 입력과 출력을 커플링 시키는 중요한 파라미터이다. 이 제안된 방법은 등가회로 모델에서 파라미터 값을 예측하고 파라미터 값을 추출하는 소프트웨어 개발에 기여할 것이다.

• 대한전기학회논문지
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• 제36권6호
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• pp.424-429
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• 1987

It has been observed that the reduction rate of the inversion layer carrier mobility due to the increase of the longitudinal electric field(drain to source direction) decreases as the transverse electric field increases. The effects of this physicar phenomenon to the I-V characteristics of the short channel NMOSFET are studied. It is shown that these effects increase the drain Current in the saturatio region, which agrees with the genarally observed decrepancy between the experimental I-V charateristics and the I-V modeling which dose not include this physical phenomenon. Also it is shown that this effect becomes more important when the device channel length decreases and the device operates in the high electric field range.

• 한국재료학회지
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• 제26권10호
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.188-188
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• 2006

We demonstrate two very simple and fast routes to fabricating ordered micro/nanopatterns of polymers over large areas on various substrates using controlled dewetting. The first method is based on utilizing microimprinting to induce the local thickness variation of an initially inverted bilayer which allows the controlled dewetting and partial layer inversion upon subsequent thermal annealing. In the second method, the self assembly of block copolymer was controlled on a chemically micropatterned surface produced by microcontact printing, being combined with its solvent vapor treatment. The kinetically driven, non-lithographical nanopattern structures were easily fabricated over large area by these approaches.