Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.07d
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- Pages.1925-1927
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- 1999
Effects of hydrogen gas addition on insulator thin film of Al/AlN/GaAs MIS system fabricated by sputtering method
스퍼터링법으로 저작한 Al/AlN/GaAs MIS 구조에서 절연박막에 수소가스첨가가 미치는 영향
- Kwon, Jung-Youl (Dep. of Electrical Eng. Myongji University) ;
- Kim, Min-Suk (Dep. of Electrical Eng. Myongji University) ;
- Kim, Jee-Gyun (Dep. of Electrical Eng. Myongji University) ;
- Lee, Hwan-Chul (Dep. of Material Science & Eng Daejin University) ;
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Lee, Heon-Yong
(Dep. of Electrical Eng. Myongji University)
- Published : 1999.07.19
Abstract
At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has
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