• Title/Summary/Keyword: internal memory

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Efficient External Memory Algorithm for Finding the Maximum Suffix of a String (스트링의 최대 서픽스를 계산하는 효율적인 외부 메모리 알고리즘)

  • Kim, Sung-Kwon;Kim, Soo-Cheol;Cho, Jung-Sik
    • The KIPS Transactions:PartA
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    • v.15A no.4
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    • pp.239-242
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    • 2008
  • We study the problem of finding the maximum suffix of a string on the external memory model of computation with one disk. In this model, we are primarily interested in designing algorithms that reduce the number of I/Os between the disk and the internal memory. A string of length N has N suffixes and among these, the lexicographically largest one is called the maximum suffix of the string. Finding the maximum suffix of a string plays a crucial role in solving some string problems. In this paper, we present an external memory algorithm for computing the maximum suffix of a string of length N. The algorithm uses four blocks in the internal memory and performs at most 4(N/L) disk I/Os, where L is the size of a block.

Implementation of JPEG 2000 Codec on ARM9 Processor Using Effective Memory Management (효율적인 메모리 관리를 이용한 ARM9 프로세서에서의 JPEG2000 코덱 구현)

  • Cho, Shi-Won;Lee, Dong-Wook
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.55 no.10
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    • pp.446-451
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    • 2006
  • In this paper, we propose an implementation of JPEG2000 codec on the ARM9 Processor which includes independent memory management facility. The codec and memory management facility together can control the encoding and the decoding process effectively within available memory area. Embedded appliances like cellular phones have very limited internal memory which can't be expanded easily. However, they should provide various applications and services using restricted memory resources. The proposed codec with memory management can provide image quality that is identical to the original image on embedded platform. The implemented codec has no memory conflict with other applications. It shows that the proposed codec can manage memory resources efficiently.

Face detect hardware implementation for embedded system (임베디드 시스템 적용을 위한 얼굴검출 하드웨어 설계)

  • Kim, Yoon-Gu;Jeong, Yong-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.9
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    • pp.40-47
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    • 2007
  • For image processing hardware, including a face detecting engine, efficient constitution of external and internal memories is a consequential point because huge memory is required to store various signal processing filters and incoming images. In this paper, we modified a face detect algerian of a general filter method for efficient hardware design. In the hardware, several memory design techniques are presented for efficient handling of image data : re-accessing avoidance with minimized internal memory usage, residing frequently accessed memory and sequence memory accessing. The hardware which can process 25 frame image data per one second with 40KB internal memory was verified by using ARM(S3C2440A) and Virtex4 FPGA and it is being fabricated as a ASIC chip using Samsung CMOS 0.18um technology.

Performance Improvement of Asynchronous Mass Memory Module Using Error Correction Code (에러 보정 코드를 이용한 비동기용 대용량 메모리 모듈의 성능 향상)

  • Ahn, Jae Hyun;Yang, Oh;Yeon, Jun Sang
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.3
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    • pp.112-117
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    • 2020
  • NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

Study on the improvement of Memory-device unification for Point-switch machine (선로전환기용 기억쇠 단일화 개선방안 연구)

  • Lee, Nam-Il;Ko, Yang-Ok;Jung, Ho-Hung
    • Proceedings of the KSR Conference
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    • 2011.05a
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    • pp.1440-1444
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    • 2011
  • Memory-device is one of the auxiliary components of point-switch machine; connecting front-rod and tongue-rail. The right side and left side of memory-device are different from each other. When there would be a derailing accident of rolling stock or motor-car, the memory-device properly bends and protects the internal of point-switch machine. Memory-device is one of the important site maintenance spare parts. Memory-device for each of right and left side should be secured so that they can be installed on correct side during an exchange work. This study suggests the development of memory-device with different left and right side and the performance test of it. The study intends to contribute in the convenience improvement of maintenance by improving the unification of memory-device.

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Fully Programmable Memory BIST for Commodity DRAMs

  • Kim, Ilwoong;Jeong, Woosik;Kang, Dongho;Kang, Sungho
    • ETRI Journal
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    • v.37 no.4
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    • pp.787-792
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    • 2015
  • To accomplish a high-speed test on low-speed automatic test equipment (ATE), a new instruction-based fully programmable memory built-in self-test (BIST) is proposed. The proposed memory BIST generates a highspeed internal clock signal by multiplying an external low-speed clock signal from an ATE by a clock multiplier embedded in a DRAM. For maximum programmability and small area overhead, the proposed memory BIST stores the unique sets of instructions and corresponding test sequences that are implicit within the test algorithms that it receives from an external ATE. The proposed memory BIST is managed by an external ATE on-the-fly to perform complicated and hard-to-implement functions, such as loop operations and refresh-interrupts. Therefore, the proposed memory BIST has a simple hardware structure compared to conventional memory BIST schemes. The proposed memory BIST is a practical test solution for reducing the overall test cost for the mass production of commodity DDRx SDRAMs.

An Energy-Efficient Matching Accelerator Using Matching Prediction for Mobile Object Recognition

  • Choi, Seongrim;Lee, Hwanyong;Nam, Byeong-Gyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.251-254
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    • 2016
  • An energy-efficient object matching accelerator is proposed for mobile object recognition based on matching prediction scheme. Conventionally, vocabulary tree has been used to save the external memory bandwidth in object matching process but involved massive internal memory transactions to examine each object in a database. In this paper, a novel object matching accelerator is proposed based on matching predictions to reduce unnecessary internal memory transactions by mitigating non-target object examinations, thereby improving the energy-efficiency. Experimental results show a 26% reduction in power-delay product compared to the prior art.

Implementation of a Speaker-independent Speech Recognizer Using the TMS320F28335 DSP (TMS320F28335 DSP를 이용한 화자독립 음성인식기 구현)

  • Chung, Ik-Joo
    • Journal of Industrial Technology
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    • v.29 no.A
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    • pp.95-100
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    • 2009
  • In this paper, we implemented a speaker-independent speech recognizer using the TMS320F28335 DSP which is optimized for control applications. For this implementation, we used a small-sized commercial DSP module and developed a peripheral board including a codec, signal conditioning circuits and I/O interfaces. The speech signal digitized by the TLV320AIC23 codec is analyzed based on MFCC feature extraction methed and recognized using the continuous-density HMM. Thanks to the internal SRAM and flash memory on the TMS320F28335 DSP, we did not need any external memory devices. The internal flash memory contains ADPCM data for voice response as well as HMM data. Since the TMS320F28335 DSP is optimized for control applications, the recognizer may play a good role in the voice-activated control areas in aspect that it can integrate speech recognition capability and inherent control functions into the single DSP.

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Design and Implementation of a Main-Memory Database System for Real-time Mobile GIS Application (실시간 모바일 GIS 응용 구축을 위한 주기억장치 데이터베이스 시스템 설계 및 구현)

  • Kang, Eun-Ho;Yun, Suk-Woo;Kim, Kyung-Chang
    • The KIPS Transactions:PartD
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    • v.11D no.1
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    • pp.11-22
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    • 2004
  • As random access memory chip gets cheaper, it becomes affordable to realize main memory-based database systems. Consequently, reducing cache misses emerges as the most important issue in current main memory databases, in which CPU speeds have been increasing at 60% per year, compared to the memory speeds at 10% per you. In this paper, we design and implement a main-memory database system for real-time mobile GIS. Our system is composed of 5 modules: the interface manager provides the interface for PDA users; the memory data manager controls spatial and non-spatial data in main-memory using virtual memory techniques; the query manager processes spatial and non-spatial query : the index manager manages the MR-tree index for spatial data and the T-tree index for non-spatial index : the GIS server interface provides the interface with disk-based GIS. The MR-tree proposed propagates node splits upward only if one of the internal nodes on the insertion path has empty space. Thus, the internal nodes of the MR-tree are almost 100% full. Our experimental study shows that the two-dimensional MR-tree performs search up to 2.4 times faster than the ordinary R-tree. To use virtual memory techniques, the memory data manager uses page tables for spatial data, non- spatial data, T-tree and MR-tree. And, it uses indirect addressing techniques for fast reloading from disk.

Design of Zero-Layer FTP Memory IP (PMIC용 Zero Layer FTP Memory IP 설계)

  • Ha, Yoongyu;Jin, Hongzhou;Ha, Panbong;Kim, Younghee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.6
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    • pp.742-750
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    • 2018
  • In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).