• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.93-99
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• 2011

We investigated how the surface roughness of electrode affects the charge injection at the pentacene/Au interface. After depositing Au film on the Si substrate by sputtering, we annealed the sample to control the Au surface roughness. Pentacene and Au top electrode were subsequently deposited to complete the sample. The nucleation density of pentacene was slightly higher on the rougher Au electrode, but surface morphologies of thick pentacene films were similar on both the as-prepared and the roughened Au electrodes. The current-voltage curves obtained from the Au/pentacene/Au structure measured as a function of temperature indicated that the interface barrier was higher for the rougher Au bottom-electrode. We propose that the higher barrier was caused by the lower work function of rougher electrode surface and the higher trap density at the interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.432.1-432.1
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• 2016

We demonstrated that the power conversion efficiency (PCE) of bilayer solar cell was significantly enhanced by inserting interfacial layer between the organic bilayer film and the Al electrode. Moreover, the water contact angle shows that the bilayer solar cells suffer from the undesirable surface component which limits the charge transport to the Al electrode. The AFM measurement has revealed that the pre- and post-thermal annealing treatments results in different morphologies of the interfacial layer which is critical for the higher PCE of the bilayer solar cells. Furthermore we have investigated the electrical properties of the bilayer solar cells and obtained insights into the detailed device mechanisms. The transient photovoltage measurements suggests that the significantly enhanced Voc is caused by reducing the recombination at the interface between the organic films and the Al electrode. By inserting the TiO2 layer between the bilayer film and Al electrode, the open circuit voltage (Voc) was increased from 0.37 to 0.66V. Consequently, the power conversion efficiency (PCE) of bilayer solar cells was significantly enhanced from 1.23% to 3.71%. As the results, the TiO2 interfacial layer can be used to form an ohmic contact layer, serveing as a blocking layer to prevent the penetration of the Al, and to reduce the recombination at the interface.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.106-113
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• 2000

Single crystallization behavior ad high temperature tensile properties of TLP bonded joints of Ni-base single crystal superalloy, CMSX-2 were investigated using MBF-80 and F-24 insert metals. CMSX-2 was bonded at 1523~1548K for 1.5~1.8ks in vacuum. The (100) orientation of bonded specimen was aligned perpendicular to the joint interface. Crystallographic orientation analyzed points over the bonded region possessed the almost same orientation across the joint interface and misorientation $\Delta^{\theta}$ was negligibly small in as-bonded and post-bond heat-treated situations. It was confirmed that single crystallization could be readily achieved during TLP bonding. The tensile strengths of all joints at elevated temperatures were equal to or greater than those of base metal the range of testing temperature between 923K and 1173K. The elongation and reduction of area in values were almost the same as those of base metal. SEM observation of the fracture surfaces of joints after tensile test revealed that the fracture surface indicated the similar morphologies each other, and that the fracture of joints occurred in the base metal in any cases.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.221-228
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• 2017

Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu ($0.1{\mu}m$ and $7{\mu}m$) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at $75^{\circ}C$. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from $0.1{\mu}m$ Cu particles increased by 192.5 % and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.5
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• pp.213-213
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• 2003

We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.5
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• pp.213-218
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• 2003

We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

• Journal of Surface Science and Engineering
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• v.49 no.2
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• pp.135-140
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• 2016

In this study, we prepared magnesium ion containing oxide films formed on the Ti-6Al-4V using plasma electrolytic oxidation (PEO) treatment. Ti-6Al-4V surface was treated using PEO in Mg containing electrolytes at 270V for 5 min. The phase, composition and morphology of the Mg ion containing oxide films were evaluated with X-ray diffraction (XRD), Attenuated total reflectance Fourier transform infrared (ATR-FTIR) and filed-emission scanning electron microscopy (FE-SEM) with energy dispersive X-ray spectrometer (EDS). The biocompatibility of Mg ion containing oxide films was evaluated by immersing in simulated body fluid (SBF). According to surface properties of PEO films, the optimum condition was formed when the applied was 270 V. The PEO films formed in the condition contained the properties of porosity, anatase phase, and near 1.7 Ca(Mg)/P ratio in the oxide film. Our experimental results demonstrate that Mg ion containing oxide promotes bone like apatite nucleation and growth from SBF. The phase and morphologies of bone like apatite were influenced by the Mg ion concentration.

• Journal of Electrochemical Science and Technology
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• v.15 no.2
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• pp.220-241
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• 2024

Due to its unique advantages, electrochemical machining (ECM) is playing an increasingly significant role in the manufacture of difficult-to-machine materials. Most of the current ECM research is conducted at room temperature, with studies on ECM in a cryogenic environment not having been reported to date. This study is focused on the electrochemical dissolution characteristics of typical iron and nickel base alloys in NaNO₃ solution at low temperature (-10℃). The polarization behaviors and passive film properties were studied by various electrochemical test methods. The results indicated that a higher voltage is required for decomposition and more pronounced pitting of their structures occurs in the passive zone in a cryogenic environment. A more in-depth study of the composition and structure of the passive films by X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy showed that the passive films of the alloys are modified at low temperature, and their capacitance characteristics are more prominent, which makes corrosion of the alloys more likely to occur uniformly. These modified passive films have a huge impact on the surface morphologies of the alloys, with non-uniform corrosion suppressed and an improvement in their surface finish, indicating that lowering the temperature improves the localization of ECM. Together with the cryogenic impact of electron energy state compression, the accuracy of ECM can be further improved.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.3.1-3.1
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• 2011

Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.