References
- Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 12 (1997). https://doi.org/10.1109/55.644085
- Y. H. Tak, K. B. Kim, H. G. Park, K. H. Lee, and J. R. Lee, Thin Solid Films 411, 12 (2002). https://doi.org/10.1016/S0040-6090(02)00165-7
- D. Wohrle and D. Meissner, Adv. Mater. 3, 3 (1991).
- Y. J. Kim, J. H. Baek, S. I. Kang, and J. S. Choi, J. Korean Vacuum Soc. 13, 3 (2004).
- L. Briseno, R. J. Tseng, and M. M. Ling, L. Adv. Mater. 18, 2320 (2006). https://doi.org/10.1002/adma.200600634
- D. S. Kim, Y. S. Lee, J. H. Park, J. S. Choi, and D. Y. Kang, J. Korean Vacuum Soc. 9, 4 (2004).
- H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Electron Device Lett. 46, 6 (1999). https://doi.org/10.1109/16.766895
- S. C. Lim, S. H. Kim, J. H. Lee, M. K. Kim, D. J. Kim, and T. Zyung, Synthetic Metals 148, 75 (2005). https://doi.org/10.1016/j.synthmet.2004.08.034
- J. C. Scott, J. Vac. Sci. Technol. 3, A21, (2003).
- C. H. Jonda, A. B. R. Mayer, U. Stolz, A. Elschner, and A. Karbach, J. Mater. Sci. 35, 5645 (2000). https://doi.org/10.1023/A:1004842004640
- I. M. Hutching, Tribology (Edward Arnold, London, 1992), pp.323-352
- Y. Kim and D. Jeon, J. Appl. Phys. 108, 016101 (2010). https://doi.org/10.1063/1.3445268
- J. H. Cho, D. H. Kim, Y. Jang, W. H. Lee, K. Ihm, J. H. Han, S. Chung, and K. Cho, Appl. Phys. Lett. 89, 132101 (2006). https://doi.org/10.1063/1.2357155
- A. C. Durr, F. Schreiber, M. Kelsch, H. D. Carstanjen, and H. Dosch, Adv. Mater. 14, 13 (2002). https://doi.org/10.1002/1521-4095(20020104)14:1<13::AID-ADMA13>3.0.CO;2-W
- C. H. Kim and D. Jeon, Appl. Phys. Lett. 95, 153302 (2009). https://doi.org/10.1063/1.3247891
- Y. -J. Lin, F. -M. Yang, C. -Y. Huang, W. -Y. Chou, J. Chang, and Y. -C. Lien, Appl. Phys. Lett. 91, 092127 (2007). https://doi.org/10.1063/1.2777147
- P. G. Schroeder, C. B. France, J. B. Park, and B. A. Parkinson, J. Appl. Phys. 91, 3010 (2002). https://doi.org/10.1063/1.1445286
- W. Li and D. Y. Li, J. Chem. Phys. 122, 064708 (2005). https://doi.org/10.1063/1.1849135
- S. M. Sze, Physics of Semiconductor Devices (John Wiley and Sons, New Jersey, 1981), pp.155-221
- S. D. Ha, Y. Qi, and A. Kahn, Chem. Phys. Lett. 495, 212 (2010). https://doi.org/10.1016/j.cplett.2010.06.085
- R. Schlaf, P. G. Schroeder, M. W. Nelson, B. A. Parkinson, P. A. Lee, K. W. Nebesny, and N. R. Armstrong, J. Appl. Phys. 86, 1499 (1999). https://doi.org/10.1063/1.370920
- C. Kim and D. Jeon, J. Korean Phys. Soc. 53, 1464 (2008). https://doi.org/10.3938/jkps.53.1464
- J. Cornil, J. Calbert, and J. L. Breadas, J. Am. Chem. Soc. 123, 1250 (2001). https://doi.org/10.1021/ja005700i
- W. Kim and D. Jeon, to be published.