• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.1-9
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• 2013

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

• The Transactions of the Korea Information Processing Society
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• v.7 no.4
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• pp.1082-1091
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• 2000

In Distributed Shared Memory systems, false sharing occurs when two different data items, not shared but accessed by two different processors, are allocated to a single block and is an important factor in degrading system performance. The paper first analyzes shared memory allocation and reference patterns in parallel applications that allocate memory for shared data objects using a dynamic memory allocator. The shared objects are sequentially allocated and generally show different reference patterns. If the objects with the same size are requested successively as many times as the number of processors, each object is referenced by only a particular processor. If the objects with the same size are requested successively much more than the number of processors, two or more successive objects are referenced by only particular processors. On the basis of these analyses, we propose a memory allocation scheme which allocates each object requested by different processors to different pages and evaluate the existing memory allocation techniques for reducing false sharing faults. Our allocation scheme reduces a considerable amount of false sharing faults for some applications with a little additional memory space.

• Proceedings of the Korean Information Science Society Conference
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• 2003.10a
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• pp.196-198
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• 2003

Virtually every digital signal processors(DSPs) support on-chip multi- memory banks that allow the processor to access multiple words of data from memory in a single instruction cycle. Also, all existing fixed-point DSPs have irregular architecture of heterogeneous register which contains multiple register files that are distributed and dedicated to different sets of instructions. Although there have been several studies conducted to efficiently assign data to multi-memory banks, most of them assumed processors with relatively simple, homogeneous general-purpose resisters. Therefore, several vendor-provided compilers fer DSPs were unable to efficiently assign data to multiple data memory banks. thereby often failing to generate highly optimized code fer their machines. This paper presents an algorithm that helps the compiler to efficiently assign data to multi- memory banks. Our algorithm differs from previous work in that it assigns variables to memory banks in separate, decoupled code generation phases, instead of a single, tightly-coupled phase. The experimental results have revealed that our decoupled algorithm greatly simplifies our code generation process; thus our compiler runs extremely fast, yet generates target code that is comparable In quality to the code generated by a coupled approach

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.3
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• pp.161-171
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• 2010

As embedded systems adopt monolithic kernels, NAND flash memory is used for swap space of virtual memory systems. While flash memory has the advantages of low-power consumption, shock-resistance and non-volatility, it requires garbage collections due to its erase-before-write characteristic. The efficiency of garbage collection scheme largely affects the performance of flash memory. This paper proposes a novel garbage collection technique which exploits data redundancy between the main memory and flash memory in flash memory-based virtual memory systems. The proposed scheme takes the locality of data into consideration to minimize the garbage collection overhead. Experimental results demonstrate that the proposed garbage collection scheme improves performance by 37% on average compared to previous schemes.

• The Journal of the Korea institute of electronic communication sciences
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• v.3 no.2
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• pp.79-85
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• 2008

It is important to consider the life of battery and low power operation for various wireless communications. Thus, Analog current-mode signal processing with SI circuit has been taken notice of in designing the LSI for wireless communications. However, in current mode signal processsing, current memory circuit has a problem called clock-feedthrough. In this paper, we examine the connection of CMOS switch that is the common solution of clock-feedthrough and calculate the relation of width between CMOS switch for design methodology for improvement of current memory. As a result of simulation, when the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the width relation in CMOS switch is obtained with $W_{Mp}=5.62W_{Mn}+1.6$, for the nMOS width of 2~6um in CMOS switch. And from the same simulation condition, it is obtained with $W_{Mp}=2.05W_{Mn}+23$ for the nMOS width of 6~10um in CMOS switch. Then the defined width relation of MOS transistor will be useful guidance in design for improvement of current memory.

• KIPS Transactions on Computer and Communication Systems
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• v.3 no.5
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• pp.129-140
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• 2014

BIST(Built-in self test) is to detect various faults of the existing memory and BIRA(Built-in redundancy analysis) is to repair detected faults by allotting spare. Also, BISR(Built-in self repair) which integrates BIST with BIRA, can enhance the whole memory's yield. However, the previous methods were suggested for RAM and are difficult to diagnose disturbance that is NAND-type flash memory's intrinsic fault when used for the NAND-type flash memory with different characteristics from RAM's memory structure. Therefore, this paper suggests a BISD(Built-in self diagnosis) to detect disturbance occurring in the NAND-type flash memory and to diagnose the location of fault, and BISR to repair faulty blocks.

• The Journal of Korean Medicine
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• v.38 no.2
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• pp.31-40
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• 2017

Objectives: We investigated the effect of acupuncture on memory function in relation with neurogenesis in old rats. Methods: In this study, a step-down avoidance task for short-term memory and Y-maze task for spatial memory capability were conducted. Western blot analysis for brain-derived neurotorphic factor (BDNF) and tyrosine kinase B (TrkB), and immunohistochemistry for 5-bromo-2'-deoxyuridine (BrdU) were performed. Results: Short-term memory and spatial memories were decreased in the old-aged rats. Expressions of BDNF and TrkB in the hippocampus were significantly decreased in the old-aged rats. Neurogenesis in the hippocampal dentate gyrus was also decreased in the old-aged rats. However, acupuncture treatment alleviated impairment of short-term and spatial memories induced by ageing. Acupuncture also increased the expressions of BDNF and TrkB and enhanced neurogenesis in the hippocampus. The present study showed that acupuncture alleviated ageing-induced short-term and spatial memory loss by increasing of BDNF and neurogenesis. Acupuncture at ST41-acupoint showed most potent effect than at ST36-acupoint or non-acupoint. Conclusions: Acupuncture might be used as the effective therapeutic modality to ameliorate the age-related decrease of brain functions.

• Journal of KIISE:Computer Systems and Theory
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• v.34 no.9
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• pp.445-458
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• 2007

This article presents a novel infrastructure for large-memory database processing using commodity hardware with operating system support. We exploit inexpensive PCs and a high-speed network capable of Remote Direct Memory Access (RDMA) operations to build a new memory hierarchy between fast volatile memory and slow disk storage. The new memory hierarchy guarantees a reasonable response time, and its storage size enables us to run large-memory database systems with little performance degradation. The proposed architecture has two main components: (1) a remote memory system inside the Linux kernel to manage other computers' memory pages efficiently and (2) a remote memory pager responsible for manipulating remote read/write operations on remote memory pages. We insist that the proposed architecture is practical enough to support the rigorous demands of commercial in-memory database systems by demonstrating the performance of publicly available main-memory databases (e.g., MySQL) on our prototyped system. The experimental results show very interesting results from the TPC-C benchmark.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.8
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• pp.5213-5218
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• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.

• Journal of Internet Computing and Services
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• v.6 no.4
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• pp.47-58
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• 2005

There are two major type of flash memory products, namely, NAND-type and NOR-type flash memory. NOR-type flash memory is generally deployed as ROM BIOS code storage because if offers Byte I/O and fast read operation. However, NOR-type flash memory is more expensive than NAND-type flash memory in terms of the cost per byte ratio, and hence NAND type flash memory is more widely used as large data storage such as embedded Linux file systems. In this paper, we designed an efficient flash memory file system based an Embedded system and presented to make up for reduced to Swapping a weak System Performance to flash file system using NAND-type flash memory, then proposed Swapping algorithm insured to an Execution time. Based on Implementation and simulation studies, Then, We improved performance bases on NAND-type flash memory to the requirement of the embedded system.