• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.287-292
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• 1995

단결정 실리콘에 P,B,As 등의 dopant를 이온주입시켰을 때 상부에 스퍼터된 Ti과 고상반응에 의해 형성된 Ti 실리사이드막에 발생되는 blister 현상에 대해 조사했다. Dopant에 관계없이 dose양이 많을수록 Ti 실리사이드막에서 blister의 크기와 밀도가 증가한다. 실리콘 표면에 dopant를 주입한 후 열처리를 하여 damage를 줄여줌으로써 blister의 양을 줄일수 있었다. 이 때 열처리온도가 높을수록 blister의 수가 감소한다.

• Structural Engineering and Mechanics
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• v.57 no.4
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• pp.717-731
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• 2016

In orthopedic surgery and more especially in total arthroplastie of hip, the fixing of the implants generally takes place essentially by means of constituted surgical polymer cement. The damage of this materiel led to the fatal rupture and thus loosening of the prosthesis in total hip, the effect of over loading as the case of tripping of the patient during walking is one of the parameters that led to the damage of this binder. From this phenomenon we supposed that a remain of bone is included in the cement implantation. The object of this work is to study the effect of this bony inclusion in the zones where the outside conditions (loads and geometric shapes) can provoke the fracture of the cement and therefore the aseptic lousing of the prosthesis. In this study it was assumed the presence of two bones -type inclusions in this material, one after we analyzed the effect of interaction between these two inclusions damage of damage to this material. One have modeled the damage in the cement around this bone inclusion and estimate the crack length from the damaged cement zone in the acetabulum using the finite element method, for every position of the implant under the extreme effort undergone by the prosthesis. We noted that the most intense stress position is around the sharp corner of the bone fragment and the higher level of damage leads directly the fracture of the total prosthesis of the hip.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.78-84
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• 1998

Niobium ions of 380 keV energy have been implanted at 300k in sapphire with a dose of $5\times10^{16}\textrm{ions/cm}^2$ and subsequently thermal annealed up to $1100^{\circ}C$ at reducing atmosphere. The behavior of the radiation damage produced by ion implantation followed by annealing is investigated using optical absorption technique and X-ray photoelectron spectroscopy(XPS). It is found that different defects annealed are dependent on the annealing temperature owing to different mechanisms which are proposed on the basis of the optical absorption measurement, and the implanted niobium in sapphire is in different local environments with different charge states after annealing, which are analyzed by XPS measurements.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.37-42
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• 2004

Shallow $p^{＋}$-n junctions were formed by preamorphization, low-energy ion implantation and dual-step annealing processes. Germanium ions were implanted into silicon substrates for preamorphization. The dopant implantation was performed into the preamorphized and non-preamorphized substrates using B $F_2$2 ions. Rapid thermal anneal (RTA) and furnace anneal (FA) were employed for dopant activation and damage removal. Samples were annealed by one of the following four methods; RTA(75$0^{\circ}C$/10s)＋Ft FA＋RTA(75$0^{\circ}C$/10s), RTA(100$0^{\circ}C$/10s)＋FA, FA＋The Ge Preamorphized sample exhibited a shallower junction depth than the non-preamorphized sample. When the employed RTA temperature was 100$0^{\circ}C$, FA＋RTA annealing sequence exhibited better junction characteristics than RTA＋FA thermal cycle from the viewpoint of junction depth, sheet resistance, $R_{s}$$.$ $x_{j}$, and leakage current.t.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.1-10
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• 2000

A rigorous modeling of ultra-low energy implantation is becoming increasingly more important as devices shrink to deep submicron dimensions. In this paper, we have developed an efficient three-dimensional Monte Carlo ion implantation model based on a modified Binary Collision Approximation(BCA). To this purpose, the modified electronic stopping model and the multi-body collision model have been taken into account in this simulator. The dopant and damage profiles show very good agreement with SIMS(Secondary Ion Mass Spectroscopy) data and RBS(Rutherford Backscattering Spectroscopy) data, respectively. Moreover, the ion distribution replica method has been implemented into the model to get a computational efficiency in a 3D simulation, and we have calculated the 3D Monte Carlo simulation into the topographically complex structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.39 no.1
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• pp.27-30
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• 2013

Dental implantation in the mandibular anterior region is considered a safe and reliable surgical procedure. On the other hand, several articles have reported that inadvertent hemorrhage of the sublingual artery can result in life-threatening airway obstruction. Surgical ligation under intubation or tracheostomy is the most widely used approach for controlling mouth floor bleeding in this highly vascular region. Nonetheless, surgically exploring the bleeding focus is difficult because of anatomical distortion followed by widespread edema and swelling. Since swelling of the mouth floor advances quickly, timely management is essential for favorable postoperative outcome. This paper reports a case of immediate hemorrhage control with angiographic embolization to perform rapid hemostasis before the ongoing swelling causes airway obstruction. Less invasive, angiographic embolization can prevent neurovascular damage during a surgical exploration of injured vascular structures on the mouth floor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1101-1105
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• 2005

We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{\times}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{\times}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.

• The korean journal of orthodontics
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• v.32 no.6 s.95
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• pp.435-441
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• 2002

Surgical microscrews were introduced and used as one method to provide absolute anchorage. Some clinicians implanted microscrews or miniscrews into the basal bone below the roots of the teeth to evade damage to the roots. Because the implanted microscrews were positioned too low the applied force was insufficient to retract the anterior teeth or protract the posterior teeth, and the use of microscrews or miniscrews seemed limited in applying vertical force. However Park implanted microscrews(micro-implants (1.2mm in diameter)) into the alveolar bone between the roots of the posterior teeth to change the direction of the applied force toward increasing horizontal component of the force. Moreover, these microscrew implants were positioned in the alveolar bone between the roots without causing discernable damage to the roots. This study was performed to provide guidelines and anatomic data to assist in the determination of the safe location for micro-implants. By measuring the CT images from 21 patients, anatomical data were obtained which were then used as a guide to determine the location for the implantation of micro-implants. The thickness of the cortical bones at the alveaolar bone region increased from the anterior to the posterior teeth area. The mandibular posterior teeth area showed thicker cortical bone. A greater distance was observed in distance between the second premolar root and first molar root in the upper arch, between the first molar root and the second molar root in the lower arch. The alveolar bone of the posterior teeth area is considered the best site for the implantation of micro-implants.