• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.10
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• pp.22-29
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• 1998

In this paper, an 10 bit current-mode CMOS A/D converter with a current predictor is designed with a CMOS process to be integrated into a portable image signal processing system. A current predictor let the number of comparator reduce to 70 percent compared with the two step flash architecture. The current magnitude of current reference is reduced to 68 percent with a modular current reference. The designed 10 bit Low-power current-mode CMOS A/D converter with a current predictor is simulated with HSPICE using 0.6$\mu\textrm{m}$ N-well single-poly triple-metal CMOS process parameters. It results in a conversion rate of 10MSamples/s. A power consumption is measured to be 94.4mW at single +5V supply voltage. The 10 bit A/D converter fabricated using the same process occupies the chip area of 1.8mm x 2.4mm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.27-36
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• 2006

Conventional delay-insensitive (DI) data encodings usually require 2N+1 wires for transferring N-bit. To reduce complexity and power dissipation of wires in designing a large scaled chip, an encoder and a decoder circuits, where N-bit data transfer can be peformed with only N+l wires, are proposed. These circuits are based on a quasi delay-insensitive (QDI) model and designed by using current-mode multiple valued logic (CMMVL). The effectiveness of the proposed data transfer mechanism is validated by comparisons with conventional data transfer mechanisms using dual-rail and 1-of-4 encodings through simulation at the 0.25 um CMOS technology. In general, simulation results with wire lengths of 4 mm or larger show that the CMMVL scheme significantly reduces delay-power product ($D{\ast}P$) values of the dual-rail encoding with data rate of 5 MHz or more and the 1-of-4 encoding with data rate of 18 MHz or more. In addition, simulation results using the buffer-inserted dual-rail and 1-of-4 encodings for high performance with the wire length of 10 mm and 32-bit data demonstrate that the proposed CMMVL scheme reduces the D*P values of the dual-rail encoding with data rate of 4 MHz or more and 1-of-4 encoding with data rate of 25 MHz or more by up to $57.7\%\;and\;17.9\%,$ respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.47-56
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• 1999

As the density of logic gates of VLSI chips has rapidly increased, more number of I/O pins has been required. This results in bigger package size and higher packager cost. The package cost is higher than the cost of bare chips for high I/O count VLSI chips. As the density of logic gates increases, the reduction method of the number of I/O pins for a given complexity of logic gates is required. In this paper, we propose the novel I/O interface circuit using CTR (Constant-Transition-Rate) code to reduce 50% of the number of I/O pins. The rising and falling edges of the symbol pulse of CTR codes contain 2-bit digital data, respectively. Since each symbol of the proposed CTR codes contains 4-bit digital data, the symbol rate can be reduced by the factor of 2 compared with the conventional I/O interface circuit. Also, the simultaneous switching noise(SSN) can be reduced because the transition rate is constant and the transition point of the symbols is widely distributed. The channel encoder is implemented only logic circuits and the circuit of the channel decoder is designed using the over-sampling method. The proper operation of the designed I/O interface circuit was verified using. HSPICE simulation with 0.6 m CMOS SPICE parameters. The simulation results indicate that the data transmission rate of the proposed circuit using 0.6 m CMOS technology is more than 200 Mbps/pin. We implemented the proposed circuit using Altera's FPGA and confimed the operation with the data transfer rate of 22.5 Mbps/pin.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.65-72
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• 2008

This paper proposes a new dual-loop digital PLL(DPLL) using seamless frequency tracking methods. The dual-loop construction, which is composed of the coarse and fine loop for fast locking time and a switching noise suppression, is used successive approximation register technique and TDC. The proposed DPLL in order to compensate the quality of jitter which follows long-term of input frequency is newly added cord conversion frequency tracking method. Also, this DPLL has VCO circuitry consisting of digitally controlled V-I converter and current-control oscillator (CCO) for robust jitter characteristics and wide lock range. The chip is fabricated with Dongbu HiTek $0.18-{\mu}m$ CMOS technology. Its operation range has the wide operation range of 0.4-2GHz and the area of $0.18mm^2$. It shows the peak-to-peak period jitter of 2 psec under no power noise and the power dissipation of 18mW at 2GHz through HSPICE simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.1-7
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• 2008

Magnetic Tunneling Junction (MTJ) has been used as a nonvolatile universal storage element mainly in memory technology. However, according to several recent studies, magneto-logic using MTJ elements show much potential in substitution for the transistor-based logic device. Magneto-logic based on MTJ can maintain the data during the power-off mode, since an MTJ element can store the result data in itself. Moreover, just by changing input signals, the full logic functions can be realized. Because of its programmability, it can embody the reconfigurable magneto-logic circuit in the rigid physical architecture. In this paper, we propose a novel 3-bit arbitrary magneto-logic circuit beyond the simple combinational logic or the short sequential one. We design the 3-bit magneto-logic which has the most complexity using MTJ elements and verify its functionality. The simulation results are presented with the HSPICE macro-model of MTJ that we have developed in our previous work. This novel magneto-logic based on MTJ can realize the most complex logic function. What is more, 3-bit arbitrary logic operations can be implemented by changing gate signals of the current drivel circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.10-17
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• 2007

It opens a new horizon on spintronics for the potential application of MTJ as a universal logic element, to employ the magneto-logic in substitution for the transistor-based logic device. The magneto-logic based on the MTJ element shows many potential advantages, such as high density, and nonvolatility. Moreover, the MTJ element has programmability and can therefore realize the full logic functions just by changing the input signals. This magneto-logic using MTJ elements can embody the reconfigurable circuit to overcome the rigid architecture. The established magneto-logic element has been designed and fabricated on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity. A 4-bit gray counter is designed to verify the magneto-logic functionality of the proposed single-layer MTJ and the simulation results are presented with the HSPICE macro-model of MTJ that we have developed.

• Journal of IKEEE
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• v.4 no.2 s.7
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• pp.181-191
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• 2000

In this paper, two schemes of generating reference voltages using enhancement-mode MOS transistors and resistors are proposed. The first one is a voltage-mode scheme where the temperature compensation is made by summing a voltage component proportional to a threshold voltage and a voltage component proportional to a thermal voltage. In the second one, that is a current-mode scheme, the temperature compensation is made by summing a current component proportional to a threshold voltage and a current component proportional to a thermal voltage. The designed circuits have been simulated using a $0.65{\mu}m$ n-well CMOS process parameters. The voltage-mode circuit has a temperature coefficient less than $48.0ppm/^{\circ}C$ and a power-supply(VDD) coefficient less than 0.21%/V for a temperature range of $-30^{\circ}C{\sim}130^{\circ}C$ and a VDD range of $3V{\sim}12V$. The current-mode circuit has a temperature coefficient less than $38.2ppm/^{\circ}C$ and a VDD coefficient less than 0.8%/V for $-30^{\circ}C{\sim}130^{\circ}C\;and\; 4V{\sim}12V$. The power consumption of the voltage-mode and current-mode circuits are $27{\mu}W\;and\;65{\mu}W$ respectively for 5V and $30^{\circ}C$. Measurement results show that the voltage-mode reference circuit has a VDD coefficient less than 0.63%/V for $30^{\circ}C{\sim}100^{\circ}C$ and has a temperature coefficient less than $490ppm/^{\circ}C\;for\;3V{\sim}6V$. The proposed reference circuits are simple and thus easy to design. The proposed current-mode reference circuit can be designed to generate a wide range of reference voltages.