• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.15-19
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• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• 한국재료학회지
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• 제14권7호
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• pp.516-521
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• 2004

We applied a deuterium plasma treatment to the surface of polycrystalline silicon films using PECVD and observed the change with AFM, XRD, ET-IR, and SIMS measurement. A bias temperature stressing (BTS) test was carried out to evaluate the reliability of the thin-film transistors (TFT). TFTs with channel lengths as small as 2 ${\mu}m$ were electrically stressed fer up to 1000 sec at room temperature. From the parameter variation such as s-factor, leakage current and on/off ratio, we suggest that the deuterium plasma treatment suppress the hot carrier effect and improve the stability of TFTs.

• International Journal of Korean Welding Society
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• 제3권2호
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• pp.29-39
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• 2003

The durability and reliability of thermal barrier coatings (TBCs) play an important role in the service reliability, availability and maintainability (RAM) of hot­section components in advanced turbine engines for aero and utility applications. Photostimulated luminescence spectroscopy (PSLS) and electrochemical impedance spectroscopy (EIS) are being concurrently developed as complimentary non­destructive evaluation (NDE) techniques for quality control and life­remain assessment of TBCs. This paper overviews the governing principles and applications of the luminescence and the impedance examined in the light of residual stress, phase constituents and resistance (or capacitance) in TBC constituents including the thermally grown oxide (TGO) scale. Results from NDE by PSLS and EIS are discussed and related to the microstructural development during high temperature thermal cycling, examined by using a variety of microscopic techniques including focused ion beam (FIB) in­situ lift­out (INLO), transmission and scanning transmission electron microscopy (TEM and STEM).

• Current Photovoltaic Research
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• 제1권1호
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• 한국재료학회지
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• 제24권1호
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• pp.6-12
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• 2014

In the present work, $WO_3$ and $WO_3-TiO_2$ were prepared by the chemical deposition method. Structural variations, surface state and elemental compositions were investigated for preparation of $WO_3-TiO_2$ sonocatalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and transmission electron microscopy (TEM) were employed for characterization of these new photocatalysts. A rhodamine B (Rh.B) solution under ultrasonic irradiation was used to determine the catalytic activity. Excellent catalytic degradation of an Rh.B solution was observed using the $WO_3-TiO_2$ composites under ultrasonic irradiation. Sonocatalytic degradation is a novel technology of treating wastewater. During the ultrasonic treatment of aqueous solutions sonoluminescence, cavitaties and "hot spot" occurred, leading to the dissociation of water molecules. In case of a $WO_3$ coupled system, a semiconductor coupled with two components has a beneficial role in improving charge separation and enhancing $TiO_2$ response to ultrasonic radiations. In case of the addition of $WO_3$ as new matter, the excited electrons from the $WO_3$ particles are quickly transferred to $TiO_2$ particle, as the conduction band of $WO_3$ is 0.74 eV which is -0.5 eV more than that of $TiO_2$. This transfer of charge should enhance the oxidation of the adsorbed organic substrate. The result shows that the photocatalytic performance of $TiO_2$ nanoparticles was improved by loading $WO_3$.

• 대한전자공학회논문지
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• 제26권5호
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• pp.46-51
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• 1989

DC 스트레스에 의해 노쇠화된 짧은 채널 LDD NMOSFET에서 문턱전압과 subthreshold 전류곡선의 변화를 관측하여 hot-carrier 주입에 의한 노쇠화를 연구하였다. 포화영역에서 정의된 문턱전압의 변화 ${Delta}V_{tex}$를 trapped charge에 기인한 변화성분 ${Delta}V_{ot}$와 midgap에서 문턱전압 영역에 생성된 계면상태에 의한 변화성분${Delta}V_{it}$로 분리하였다. 게이트 전압이 드레인 전압보다 큰 positive oxid field ($V_g>V_d$) 조건에서는 전자들이 게이트 산화막으로 주입되어 문턱전압이 증가되었으나 subthreshold swing은 크게 변화하지 않고 subthreshold 전류곡선만 높은 게이트 전압으로 평행 이동하였다. 게이트 전압이 드레인 전압보다 낮은 negative oxide field ($V_g) 조건에서는 hole이 주입되고 포획된 결과를 보였으나 포획된 positive charge수 보다 더 많은 계면상태가 동시에 생성되어 문턱전압과 subth-reshold swing이 증가되었다.

• 공업화학
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• 제23권2호
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• pp.210-216
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• 2012

급냉 제강슬래그를 재활용하기 위하여 급냉 제강슬래그의 대체율과 폴리머 결합재의 첨가율을 다양하게 변화시켜 공시체를 제작하였다. 공시체의 제 물성을 조사하기 위하여 흡수시험, 압축 및 휨강도, 내열수성시험, 세공분포측정 및 SEM에 의한 미세조직 관찰을 실시하였다. 그 결과 폴리머 결합재 및 급냉 제강슬래그의 대체율 증가에 따라 휨강도는 현저히 증가되었으나 압축강도는 특정한 배합조건에서 최대강도를 나타내었다. 내열수성시험에 의하여 압축 및 휨강도는 현저히 감소되었고, 총세공량은 증가되었으나 세공직경은 감소되었다. 전자현미경 관찰에서 내열수시험 전의 조직은 견고하게 융착되어 있었으나 내열수시험 후의 조직에서는 폴리머 결합재가 분해 또는 열화되어 있는 것을 관찰할 수 있었다.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2009년도 정보통신설비 학술대회
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• pp.391-394
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• 2009

In this paper, achieved rise temperature distribution about degradation phenomenon of 2 MVA distribution mold transformer using finite element method (FEM). Usually, life of transformer is depended on temperature distribution of specification region than thermal special quality of transformer interior. Specially, life of transformer by decline of dielectric strength decreases rapidly in case rise by strangeness transformer interior hot spot temperature value permits. Because calculating high-voltage winding and low-voltage winding of mold transformer and Joule's loss of core for improvement these life, forecasted heat source, and high-voltage winding and low-voltage winding of mold transformer and rise temperature distribution of core for supply of electric power and temperature distribution of highest point on the basis of the result Also, calculated temperature rise limit of mold transformer and permission maximum temperature using analysis by electron miracle heat source alculate and forecasted rise temperature distribution by heat source of thermal analysis with calculated result.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.