한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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고집적화된 1TC SONOS 플래시 메모리에 관한 연구

A study on the High Integrated 1TC SONOS Flash Memory

  • 김주연 (울산과학대학 전기전자학부) ;
  • 이상배 (광운대학교 전자재료공학과) ;
  • 한태현 (광운대학교 전자재료공학과) ;
  • 안호명 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • 발행 : 2002.07.01
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초록

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

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