Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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A Study on the Effect of Plasma Deuterium Treatment on Reliability of Poly-Silicon Thin Film Transistors

중수소 프라즈마 처리가 다결정 실리콘 TFT의 안정성에 미치는 영향에 관한 연구

  • Sohn Song Ho (Department of Materials Science and Engineering, Korea University) ;
  • Bae S. C. (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim Donghwan (Department of Materials Science and Engineering, Korea University)
  • 손송호 (고려대학교 신소재공학과) ;
  • 배성찬 (경북대학교 전자공학과) ;
  • 김동환 (고려대학교 신소재공학과)
  • Published : 2004.07.01
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Abstract

We applied a deuterium plasma treatment to the surface of polycrystalline silicon films using PECVD and observed the change with AFM, XRD, ET-IR, and SIMS measurement. A bias temperature stressing (BTS) test was carried out to evaluate the reliability of the thin-film transistors (TFT). TFTs with channel lengths as small as 2 ${\mu}m$ were electrically stressed fer up to 1000 sec at room temperature. From the parameter variation such as s-factor, leakage current and on/off ratio, we suggest that the deuterium plasma treatment suppress the hot carrier effect and improve the stability of TFTs.

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References

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