• Journal of Magnetics
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• 제14권4호
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.1019-1022
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30W rf bias condition. A high pretilt angle of about 5$^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C:H thin film surface as working gas at 30W rf bias condition can be achieved.

• 한국인터넷방송통신학회논문지
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• 제8권6호
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• pp.105-110
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• 2008

질소 분위기 하에서 GaN 에피층의 고온 급속 열처리 효과를 조사하였다. 열처리는 950도의 급속 열처리로를 이용하여 수행하였다. 급속 열처리에 따른 효과는 x선 회절을 통하여 연구하였다. 열처리 시간이 증가할수록 Bragg 피크는 각도가 큰 쪽으로 이동하였다. 피크의 FWHM은 열처리 시간이 증가함에 따라 약간의 증가 후 감소하였다가 다시 증가하였다. 시료는 적절한 조건 하에서 급속 열처리 후 구조적인 특성의 개선이 관측되었다. 시료의 결정성의 향상은 에피층의 격자 관련 요소들의 흐트러짐의 감소에 기인한다.

• 한국재료학회지
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• 제21권3호
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• pp.156-160
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• 2011

FePt nanoparticles suspension was synthesized by reduction of platinum acetylacetonate and decomposition of iron pentacarbonyl in the presence of oleic acid and oleyl amine. FePt nanoparticles were coated on a substrate by convective assembly from the suspension. To prevent the coalescence during the annealing of FePt nanoparticles double convective coatings were tried. First convective coating was for silica particle assembly on a silicon substrate and second one was for FePt nanoparticles on the previously coated silica layers. It was observed by scanning electron microscopy (SEM) that FePt nanoparticles were dispersed on the silica particle surface. After annealing at $700^{\circ}C$ for 30 minutes under nitrogen atmosphere, FePt nanoparticles on silica particles were maintained in a dispersed state with slight increase of particle size. On the contrary, FePt nanoparticles that were directly coated on silicon substrate showed severe particle growth after annealing due to the close-packing of nanoparticles during assembly. The size variation during annealing was also verified by X-ray diffractometer (XRD). It was suggested that pre-coating, which offered solvent flux oppose to the capillary force between FePt nanoparticles, was an effective method to prevent coalescence of nano-sized particles under high temperature annealing.

• 열처리공학회지
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• 제19권3호
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• pp.149-155
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• 2006

The effects of eight types of spheroidizing annealing conditions including annealing temperature, annealing time, cooling rate, and gas atmosphere in the annealing furnace on the microstructure were determined in SM45C steel which has been widely used for automotive parts. The well-developed spheroidized structure and minimum hardness were obtained when the steel was heat-treated 6 hours at $740^{\circ}C$, cooled to $710^{\circ}C$ at a cooling rate of $24^{\circ}C/h$, and then kept for 7 hours at the $710^{\circ}C$ followed by air cooling. In order to increase the productivity and to save the manufacturing cost, it is desirable to apply a faster cooling rate in the spheroidizing annealing. It was found that air cooling was the fastest cooling rate applicable to the SM45C steel. The steel heat treated in air showed the decarburized layer of about $110{\mu}m$ in thickness at the surface of the specimen, resulting in serious problems in the quality of the quenched product.

• 한국기계가공학회지
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• 제18권2호
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• pp.82-90
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• 2019

In this paper, the effects of different 3D printing conditions including oil lubrication and annealing are observed for their effects on tensile testing. In 3D printing, a press-out extrude filament is rapidly heated and cooled to create internal stress in the printed part. The 3D printing internal stress can be removed using oil-coated filament and annealing. During the oven cooling at an annealing temperature of $106^{\circ}C$, the stress of the specimens with laminated angle $0^{\circ}$ tends to increase by 12.6%, and that of the oil-coated filament printing specimens is increased by 17%. At the annealing temperature of $106^{\circ}C$, the stress of the oil-coated filament printing specimens tends to increase by 35%. In this study, we have found that the oil lubrication and annealing remove the internal stresses and increase the strength of the printed specimens. The oil lubrication and annealing reform the crystalline structures to even out the areas of high and low stress, which creates fewer fragile areas. These results are very useful for the manufacture of 3D printing products with a suitable mechanical strength for applications.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• 전자공학회논문지A
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• 제30A권8호
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• pp.42-48
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• 1993

Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.

• 한국세라믹학회지
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• 제43권1호
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

• 열처리공학회지
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• 제25권5호
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• pp.239-243
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at $300^{\circ}C$ show the higher sensitivity than the other films annealed at $150^{\circ}C$. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of $SnO_2$ films for hydrogen gas. These results suggest that the vacuum annealed $SnO_2$ thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.