• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.271-277
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• 2002

In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.126-126
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• 2003

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.40-46
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• 2002

A MEMS(Micro Electro Mechanical System) package using a doped-silicon(Si) carrier for coplanar microwave and millimeter-wave integrated circuits is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabrication and measuring a GaAs CPW(Coplanar Waveguide) on the three types of Si-carriers(gold-plated high resistivity, lightly doped, high resistivity). The proposed MEMS package using the lightly doped(15 ${\Omega}{\cdot}$) Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the resonant leakage.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.142-147
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• 2023

This paper presents a novel design of a differential patch antenna for 60-GHz millimeter-wave applications. The design process of the back-to-back (BTB) patch antenna is based on the conventional single-patch antenna. The initial design of the BTB patch antenna (Type-I) has a patch size of 0.66 × 0.98 mm² and a substrate size of 0.99 × 1.48 mm². It has a gain of 1.83 dBi and an efficiency of 94.4% with an omni-directional radiation pattern. A 0.4 mm-thick high-resistivity silicon (HRS) is employed for the substrate of the BTB patch antenna. The proposed antenna is further analyzed to investigate the effect of substrate size and resistivity. As the substrate resistivity decreases, the gain and efficiency degrade due to the substrate loss. As the substrate (HRS) size decreases approaching the patch size, the resonant frequency increases with a higher gain and efficiency. The BTB patch antenna has optimal performances when the substrate size matches the patch size on the HRS substrate (Type-II). The antenna is redesigned to have a patch size of 0.81 × 1.18 mm² on the HRS substrate in the same size. It has an efficiency of 94.9% and a gain of 1.97 dBi at the resonant frequency of 60 GHz with an omni-directional radiation pattern. Compared to the initial design of the BTB patch antenna (Type-I), the optimal BTB patch antenna (Type-II) has a slightly higher efficiency and gain with a considerable reduction in antenna area by 34.8%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.145-150
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• 2011

In this paper, we designed a tunable microstrip patch antenna using RF MEMS switches. The design and simulation of the antenna were performed using a high frequency structure simulator(HFSS). The antenna was designed for use in the ISM band and either operates at 2.4 GHz or 5.7 GHz achieving -10 dB return-loss bandwidths of 20 MHz and 180 MHz, respectively. In order to obtain high efficiency and improve the ease of integration, a high resistivity silicon(HRS) wafer on a glass substrate was used for the antenna. The antenna achieved high gains: 8 dB at 5.7 GHz and 1 dB at 2.4 GHz. The RF MEMS DC contact switches were simulated and analyzed using ANSYS software.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.129-129
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• 2009

In this paper, a tunable microstrip patch antenna designed using RF MEMS switches is reported. The design and simulation antenna were performed using high frequency structure simulator (HFSS). The antenna was designed in ISM Band and operates simultaneously at 2.4 GHz and 5.7 GHz with a -10 dB return-loss bandwidth of 20 MHz and 180 MHz, respect-tively. To obtain high efficiency and improve integrated ability, the High Resistivity Silicon (HRS) wafer was used for the antenna. The antenna achieved high gain with 8 dB at 5.7 GHzand 1.5 dB at 2.4 GHz. The RF MEMS DC contact switches was simulated and analysis by ANSYS software.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.135-145
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• 2006

This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.