• Journal of radiological science and technology
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• v.26 no.2
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• pp.63-69
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• 2003

Filtering is necessary to reduce statistical noise and to increase image quality in SPECT images. Noises controled by low-pass filter designed to suppress high spatial frequency in SPECT image. Most SPECT filter function control the degree of high frequency supression by chosing a cut of frequency. The location of cut off frequency determines the affect image noise and spatial resolution. If select the low cut off frequency, its provide good noise suppression but insufficient image quantity and high cut off frequencies increase the image resolution but insufficient noise suppression. The purpose of this study was to determines the optimam cut off level with comparison of FWHM according to cut off level in each kiters-Band-limited, Sheep-logan, Sheep-logan Hanning, Generalized Hamming, Low pass cosine, Parazen and Butterworth filter in SPECT camera. We recorded image along the X, Y, Z-axis with $^{99m}TcO_4$ point source and measured FWHM by use profile curve. We find averaged length is $9.16\;mm{\sim}18.14\;mm$ of FWHM in X, Y, and Z-axis, and Band-limited and Generalized Hamming filters measures 9.16 mm at 0.7 cycle/pixel cut off frequency.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.5
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• pp.447-454
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• 2011

This paper reports a filtered velocity feedback(FVF) controller, which is an alternative to direct velocity feedback(DVFB) controller. The instability problems due to high frequency response under DVFB can be alleviated by the suggested FVF controller. The FVF controller is designed to filter out the unstable high frequency response. The FVF controller and the dynamics of clamped beams under forces and moments are first formulated. The effects of the design parameters(cut-off frequency, gain, and damping ratio) on the stability and the performance are then investigated. The cut-off frequency should be selected not to affect the system stability. The magnitude of the open loop transfer function(OLTF) at the cut-off frequency should be small. As increasing the gain of the FVF controller, the magnitude of the OLTF is increased, so that the closed loop response can be reduced more. The enhancement of the OLTF at the cut-off frequency is reduced but the phase behavior around the cut-off frequency is distorted, as the damping ratio is increased. The control performance is finally estimated for the clamped beam. More than 10 dB reductions in velocity response can be achieved at the modal frequencies from the first to eighth modes.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.04a
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• pp.264-270
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• 2011

This paper reports a filtered velocity feedback (FVF) controller, which is an alternative to direct velocity feedback (DVFB) controller. The instability problems due to high frequency response under DVFB can be alleviated by the suggested FVF controller. The FVF controller is designed to filter out the unstable high frequency response. The FVF controller and the dynamics of clamped beams under forces and moments are first formulated The effects of the design parameters (cut-off frequency, gain, and damping ratio) on the stability and the performance are then investigated. The cut-off frequency should be selected not to affect the system stability. The magnitude of the open loop transfer function (OLTF) at the cut-off frequency should be small. As increasing the gain of the FVF controller, the magnitude of the OLTF is increased, so that the closed loop response can be reduced more. The enhancement of the OLTF at the cut-off frequency is reduced but the phase behavior around the cut-off frequency is distorted, as the damping ratio is increased The control performance is finally estimated for the clamped beam. More than 10dB reductions in velocity response can be achieved at the modal frequencies from the first to eighth modes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.892-897
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• 2007

This paper presents the output filter design and the output characteristic analysis by cut-off frequency set up of the LCR filter on NPC multi-level inverter with trap-filter. The single-phase NPC three-level inverter operates at low switching frequency. The proposed LC trap filter is comprised of a conventional LCR output filter, by using LC trap filter the need for high damping resistor and low LC cut-off frequency is eliminated. Also. low damping resistor is increased the output filter system. The multilevel inverter system used NPC type inverter in proper system for high power application and controller is used DSP(TMS320C31). The effectiveness of proposed system confirmed the validity through SPICE simulation and experimental results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.690-692
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• 2003

In this paper, we have investigated characteristics of radio frequency for double gate MOSFET with 50nm main gate in according to variation of side gate length. We could know the increasement of cut-off frequency as the side gate length is lower. As a result, we could know the most optimum performance characteristics when side gate length was 70nm. In this time, the DG MOSFET of side gate with 70nm has very high cut-off frequency like 41.4GHz.

• Korean Journal of Clinical Laboratory Science
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• v.55 no.3
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• pp.132-142
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• 2023

Human leukocyte antigen (HLA) typing was performed in the diagnostic immunology laboratory of the Seoul National University Hospital. Among 611 HLA-DR tests, specific bead reactions suspected of being false positive and false negative in Lot 20 reagents were found. Therefore, we aimed to identify the factors causing cut-off corrections by examining cases where cut-off corrections were not made for 533 test results and cases where cut-off corrections were made for 78 cases after the cut-off corrections of specific beads. Frequency analysis was conducted to verify the demographic characteristics, and descriptive statistics were used to assess the humidity in the laboratory as a variable. Cross-tabulation was done to examine the association between cut-off corrections and demographic characteristics. Independent samples t-tests were conducted to verify the difference in humidity based on cut-off corrections. Finally, logistic regression analysis was conducted to examine the relationship between humidity levels and the rate of cut-off corrections, and results showed as the humidity level in the laboratory highs, the number of cut-off corrections decreased by a factor of 0.986. This suggests cut-off corrections rate increases when the humidity lowers. Therefore, it indicates that humidity in the laboratory is also a factor that affects HLA typing results.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1803-1805
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• 2000

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.142-142
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• 2011

Microwave diagnostics method for plasma science and engineering is vigorous research area for its good characteristics such as high sensitivity, reliability, and broad measurement spectrum from low density plasma to high density. We investigate mechanism of microwave probes (hairpin, impedance and absorbtionf probe) and apply it for interpretation of full transmitted spectrum of cutoff probe. Mechanism of the spectrum having same key roles of I-V curve of Langmuir probe is not exactly revealed yet in spite of its importance. This study elucidates physics behind it using a circuit model and E/M wave simulation. Circuit model reveals exact cut-off peak frequency taking account of a collision frequency and a plasma frequency and it enable precise diagnostics of plasma densty from low pressure to high pressre. Cut-off like peaks have been obstacle for choosing cut-off peak is analyzed by E/M simulation and one of cutoff like peaks made by probe holder used for acquire plasma density with cutoff peak applying the hairpin relation. Furthermore, phase difference method for plasma density is conducted. This method uses a single microwave frequency source and it is low-priced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.