Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Optimum Ge Profile for Higher Cut Off Frequency of SiGe HBT

SiGe HBT 소자의 높은 차단 주파수 특성을 위한 Ge profile 연구

  • Kim, Sung-Hoon (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Kyung-Hae (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Lee, Hoong-Joo (Division of Computer-Information-Telecommunication Science, Sangmyung University) ;
  • Ryum, Byung-Ryul (ASB Inc.) ;
  • Yi, Jun-Sin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
  • 김성훈 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 김경해 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 이홍주 (상명대학교 컴퓨터.정보.통신학부) ;
  • 염병렬 ;
  • 이준신 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2000.07.17
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Abstract

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

Keywords