Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Linearity Enhancement of Doped Channel GaAs-based Power FETs Using Double Heterostructure

이중이종접합을 이용한 채널도핑된 GaAs계 전력FET의 선형성 증가

  • 김우석 (포항공과대학교 전자전기공학과) ;
  • 김상섭 (포항공과대학교 전자전기공학과) ;
  • 정윤하 (포항공과대학교 전자전기공학과)
  • Published : 2000.06.01
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Abstract

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

Keywords