• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.195-198
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• 2002

현재의 광통신, 이동통신 및 디지털 시대에서는 보다 소형화되고, 대용량의 데이터 저장 및 다기능 소자에 대한 요구가 많아지고 있다. 이러한 전자 산업 환경에서 MEMS 소자는 여러 요구조건을 만족시킬 수 있는 특징을 갖추고 있으며 실제 소자의 제작에 있어서 MEMS 소자를 이용하여 여러 물리 및 화학 센서 및 Actuator 제작에 응용이 되어지고 있고 Optical switch, Gyroscope, 적외선 어레이 센서, 가속도 센서, 위치 센서 등 여러 분야에서 실용화가 진행되어지고 있다. MEMS 구조물의 packaging 방법에 있어서는 내부 MEMS 소자의 동작을 위한 외부 환경으로부터의 보호를 위하여 Hermetic sealing에 대한 요구를 만족시켜야 한다. 본 발표에서는 이와 같은 MEMS device의 진공 패키지를 구현함에 있어서 기판 내부에 수동소자를 실장할 수 있는 LTCC 기술을 이용하여 진공 패키징하는 방법에 대하여 소개한다. 본 기술을 이용하는 경우 기존의 Hermetic sealing 이외에 향후 적층 기판 내부에 수동소자를 내장시켜 배선 길이 및 노이즈 성분을 감소시켜 더욱 전기적 성능을 향상시킬 수 있는 장점이 있게된다. 본 논문에서는 LTCC 기판을 이용하여 패키징 시킨 후, 내부 진공도에 영향을 줄 수 있는 계면들에서의 시간에 따른 진공도 변화의 특성치를 측정하여 LTCC 기판의 Hermetic sealing 특성에 관하여 조사하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.249-272
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• 2005

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.129-133
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• 2001

In this paper, hermetic sealing was studied fur wafer level packaging of the MEMS devices. With the flip-chip bonding method, this B-stage epoxy sealing will be profit to MEMS device sealing and further more RF-MEMS device sealing. B-stage epoxy can be cured 2-step and hermetic sealing can be obtained. After defining $500{\mu}{\textrm}{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was then aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line were maintained during the sealing process. The height of the seal-line was controlled within $\pm0.6${\mu}{\textrm}{m}$ and the strength was measured to about 20MPa by pull test. The leak rate of the epoxy was about $10^7$ cc/sec from the leak test.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.33-36
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• 2006

Many issues arose to use the Pb-free solder as adhesive materials in MEMS ICs and packaging. Then this study for easy and simple sealing method using adhesive materials was carried out to maintain hermetic characteristic in MEMS Package. In this study, Hermetic characteristic using negative PR (XP SU-8 3050 NO-2) as adhesive at the interface of Si test coupon/glass substrate and Si test coupon/LTCC substrate was examined. For experiment, the dispenser pressure was 4 MPa and the $200\;{\mu}m{\Phi}$ syringe nozzle was used. 3.0 mm/sec as speed of dispensing and 0.13 mm as the gap between Si test coupon and nozzle was selected to machine condition. 1 min at $65^{\circ}C$ and 15 min at $95^{\circ}C$ as Soft bake, $200\;mj/cm^2$ expose in 365 nm wavelength as UV expose, 1 min at $65^{\circ}C$ and 6 min at $95^{\circ}C$ as Post expose bake, 60 min at $150^{\circ}C$ as hard bake were selected to activation condition of negative PR. Hermetic sealing was achieved at the Si test coupon/ glass substrate and Si test coupon/LTCC substrate. The leak rate of Si test coupon/glass substrate was $5.9{\times}10^{-8}mbar-l/sec$, and there was no effect by adhesive method. The leak rate of Si test coupon/LTCC substrate was $4.9{\times}10^{-8}mbar-l/sec$, and there was no effect by dispensing cycle. Better leak rate value could be achieved to use modified substrate which prevent PR flow, to increase UV expose energy and to use system that controls gap automatically with vision.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.58-64
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• 2006

In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.1-5
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• 2003

In this project, the efficiency of localized heating for micro systems packaging is developed by using a forced potential scheme microheater. Less than 0.2 Mpa contact pressure was used for bonding with a 200 mA current input for $50{\mu}m$ width, $2{\mu}m$ height and $8mm{\times}8mm$, $5mm{\times}5mm$, $3mm{\times}3mm$ sized phosphorus-doped poly-silicon microheater. The temperature can be raised at the bonding region to $800^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3 minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional microheaters. For performing the gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for conducting a gross leak check. The pass ratio of bonded dies was 67%, for conventional localized heating, and 85% for our newly developed FP scheme. The bonding strength was more than 25Mpa for FP scheme packaging, which shows that FP scheme can be a good candidate for micro-scale hermetic packaging.

• Journal of Information Display
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• v.3 no.1
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.239-242
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• 2003

Optical module package is a hermetic metal-ceramic package for carrying optical IC. In case of LD(laser diode) module, window is used for both the path of optical signal and hermetic sealing of package. So, window has the metallization pattern on the surface for brazing process with package wall. In this study, several method were investigated for metallization. Thin film, thick film and mixed method were used for fabrication of metallization pattern. After brazing process, hermeticity and adhesion strength were tested for characterization of metallization pattern.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.91-95
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• 2014

This paper presents the structure and process technology of simple and low-cost wafer-level packaging (WLP) for thin film radio frequency (RF) devices. Low-cost practical micromachining processes were proposed as an alternative to high-cost processes, such as silicon deep reactive ion etching (DRIE) or electro-plating, in order to reduce the fabrication cost. Gold (Au)/Tin (Sn) alloy was utilized as the solder material for bonding and hermetic sealing. The small size fabricated WLP of $1.04{\times}1.04{\times}0.4mm^3$ had an average shear strength of 10.425 $kg/mm^2$, and the leakage rate of all chips was lower than $1.2{\times}10^{-5}$ atm.cc/sec. These results met Military Standards 883F (MIL-STD-883F). As the newly proposed WLP structure is simple, and its process technology is inexpensive, the fabricated WLP is a good candidate for thin film type RF devices.