• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.111-117
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• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.2
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• pp.253-261
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• 1987

Thermoacoustic oscillation of an air column induced by heated wires is investigated analytically and experimentally. Acoustic power generation from a single heater wire is estimated based on the result of heat transfer analysis and expressed in terms of the efficiency factor indicating the conversion efficiency from heat to acoustic energy. It is shown that the efficiency factor becomes maximum when the wire radius is the order of the coustic boundary layer thickness and the flow velocity is close to the thermal diffusion velocity. Onset condition of the column oscillation is obtained by equating the acoustic power generation at the heater to the power loss due to thermoviscous dissipation at the tube wall and the convection and radiationloss at the open ends of the tube. In estimating the acoustic power generation, the heater is treated as a stretched single wire by correcting the flow velocity to take into account the interactions between adjacent heater wires. Experiment is performed by using a spiral heater of 1mm diameter in an air column of 37mm diameter. The heat input to drive the oscillation is measured and compared with the theoretical prediction. A good agreement is found between the theory and experiment, which is regarded as a substantial verification of the present analysis.

• 한국전산유체공학회:학술대회논문집
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• 2006.10a
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• pp.181-184
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• 2006

High-speed flight vehicle have various cavities. The supersonic cavity flow is complicated due to vortices, flow separation and reattachment, shock and expansion waves. The general cavity flow phenomena include the formation and dissipation of vortices, which induce oscillation and noise. The oscillation and noise greatly affect flow control, chemical reaction, and heat transfer processes. The supersonic cavity' flow with high Reynolds number is characterized by the pressure oscillation due to turbulent shear layer, cavity geometry, and resonance phenomenon based on external flow conditions, The resonance phenomena can damage the structures around the cavity and negatively affect aerodynamic performance and stability. In the present study, we performed numerical analysis of cavities by applying the unsteady, compressible three dimensional Reynolds-Averaged Navier-Stokes(RANS) equations with the ${\kappa}-{\omega}$ turbulence model. The cavity model used for numerical calculation had a depth(D) of 15mm cavity aspect ratio(L/D) of 3, width to spanwise ratio(W/D) of 1.0 to 5.0. Based on the PSD(Power Spectral Density) and CSD(Cross Spectral Density) analysis of the pressure variation, the dominant frequency was analyized and compared with the results of Rossiter's Eq.

• Journal of computational fluids engineering
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• v.11 no.4 s.35
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• pp.62-66
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• 2006

High-speed flight vehicle have various cavities. The supersonic cavity flow is complicated due to vortices, flow separation, reattachment, shock waves and expansion waves. The general cavity flow phenomena includes the formation and dissipation of vortices, which induce oscillation and noise. The oscillation and noise greatly affect flow control, chemical reaction, and heat transfer processes. The supersonic cavity flow with high Reynolds number is characterized by the pressure oscillation due to turbulent shear layer, cavity geometry, and resonance phenomenon based on external flow conditions. The resonance phenomena can damage the structures around the cavity and negatively affect aerodynamic performance and stability. In the present study, we performed numerical analysis of cavities by applying the unsteady, compressible three dimensional Reynolds-Averaged Navier-Stokes(RANS) equations with the ${\kappa}-{\omega}$ turbulence model. The cavity model used for numerical calculation had a depth(D) of 15mm cavity aspect ratio (L/D) of 3, width to spanwise ratio(W/D) of 1.0 to 5.0. Based on the PSD(Power Spectral Density) and CSD(Cross Spectral Density) analysis of the pressure variation, the dominant frequency was analyzed and compared with the results of Rossiter's Eq.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.1-10
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• 2016

This paper reports the trends of researches and technologies of electronic packaging using graphene. Electronic packaging is to provide the signal and electrical current among electronic components, to remove the heat in electronic systems or components, to protect and support the electronic components from external environment. As the required functions and performances of electronic systems or components increase, the electronic packaging has been intensively attracted attention. Therefore, technologies such as miniaturization, high density, Pb-free material, high reliability, heat dissipation and so on, are required in electronic packaging. Recently, graphene, which is a single two-dimensional layer of carbon atoms, has been extensively investigated because of its superior mechanical, electrical and thermal properties. Until now, many studies have been reported the applications using graphene such as flexible display, electrode, super capacitor, composite materials and so on. In this paper, we will introduce and discuss various studies on recent technologies of electronic packaging using graphene for solving the required issues.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.6
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• pp.409-414
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• 2017

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

• Journal of the Korean Wood Science and Technology
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• v.42 no.3
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• pp.339-345
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• 2014

For enhancing productivity of glulam, high frequency (HF) curing technique was researched in this study. Heat energy is generated by electromagnetic energy dissipation when HF wave is applied to a dielectric material. Because both lamina and adhesives have dielectric property, internal heat generation would be occurred when HF wave is applied to glulam. Most room temperature setting adhesives such as phenol-resorcinol-formaldehyde (PRF) resin, which is popularly used for manufacturing glulam, can be cured more quickly as temperature of adhesives increases. In this study, dielectric properties of larch wood and PRF adhesives were experimentally evaluated, and the mechanism of HF heating, which induced the fast curing of glue layer in glulam, was theoretically analyzed. Result of our experiments showed relative loss factor of PRF resin, which leads temperature increase, was higher than that of larch wood. Also, it showed density and specific heat of PRF, which are resistance factors of temperature increase, were higher than those of wood. It was expected that the heat generation in PRF resin by HF heating would occur greater than in larch wood, because the ratio of relative loss factor to density and specific heat of PRF resin was greater than that of larch wood. Through theoretical approach with the experimental results, the relative strengths of ISM band HF electric fields to achieve a target heating rate were estimated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4757-4761
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• 2012

LED chip on board(COB) package has been fabricated using aluminum substrate and aluminum anodization process. An alumina layer, used as a dielectric in COB substrate, is produced on aluminum substrate by selective anodization process. Also, selective anodization process makes it possible to construct a thermal via with a fully-filled via hole. Two types of the COB package are fabricated in order to analyze the effects of their substrate types on thermal resistivity and luminous efficiency. The aluminum substrate with the thermal via shows more improved measurement results compared with the alumina substrate. These results demonstrate that selective anodization process and thermal via can increase heat dissipation of COB package in this work. In addition, it is proved experimentally that these parameters also can be enhanced using efficient layout of multiple chip in the COB package.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.213-217
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• 2013

The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.