• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.137-140
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.1
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• pp.9-17
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• 2022

The series-connected semiconductor devices structure is one way to achieve a high voltage rating. However, a problem with voltage imbalance exists in which different voltages are applied to the series-connected switches. This paper proposed a new voltage balancing technique that controls the turn-off delay time of the switch by adding one bipolar junction transistor to the gate turn-off path. The validity of the proposed method is proved through simulation and experiment. The proposed active gate driver not only enables voltage balancing across a variety of current ranges but also has a greater voltage balancing performance compared with conventional RC snubber methods.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.5
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• pp.509-521
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• 1988

In the designs of integrated circuits, the buffer circuits used for driving a large capacitive load from minimum-structured logic circuit outputs have important effects upon system throughputs. Therefore it is important to optimize the buffer circuits. In this paper, the principle of designing CMOS buffer circuits which have the minimum delay and drive the given capacitive load is discussed. That is, the effects of load capacitance upon rise time, fall time, and delay of the CMOS inverter and the effects of parasitic capacitances are finely analysed to calculate the requested minimum-delay CMOS buffer condition. This is different from the method by C.A. Mead et. al.[2.3.4.]which deals with passive-load-nMOS buffers. Large channel width MOS transistor stages are necessary to drive a large capacitive load. The effects of polysilicon gate resistances of such large stages upon delay are also analysed.And, the area of buffer circuits designed by the proposed method is smaller than that of buffer circuits designed by C.A. Mead's method.

• Journal of IKEEE
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• v.10 no.1 s.18
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• pp.16-21
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• 2006

This paper shows a vernier delay technique for generating precise multiphase clocks using PLL structure. The proposed technique can achieve the finer timing resolution less than the gate delay of the delay chain in VCO. Using this technique, 62.5ps of timing resolution can be achieved if the reference clock rate is set at 1GHz using 0.18um CMOS technology. Jitter of 14ps peak-to-peak was measured.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.136-142
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• 2013

CRC features have been added to increase the reliability of the data in memory products for high-speed operation, such as DDR4. High-speed memory products in a shortage of internal timing margin increases for the CRC calculation. Because the existing CRC requires many additional circuit area and delay time. In this paper, we show that the matrix-type CRC and a new XOR/XNOR gate could be improved the circuit area and delay time. Proposed matrix-type CRC can detect all odd-bit errors and can detect even number of bit errors, except for multiples of four bits. In addition, a single error in the error correction can reduce the burden of re-transmission of data between memory products and systems due to CRC errors. In addition, the additional circuit area, compared to existing methods can be improved by 57%. The proposed XOR gate which is consists of six transistors, it can reduce the area overhead of 35% compared to the existing CRC, 50% of the gate delay can be reduced.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.261-266
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• 1998

This paper describes the fabrication and characterization of dual-polysilicon gated surface channel 0.1$\mu\textrm{m}$ CMOSFETs using BF2 and arsenic as channel dopants. We have used and LDD structure and 40${\AA}$ gate oxide as an insulator. To suppress short channel effects down to 0.1$\mu\textrm{m}$ channel length, shallow source/drain extensions implemented by low energy implantation and SSR(Super Steep Retrograde) channel structure were used. The threshold voltages of fabricated CMOSFETs are 0.6V. The maximum transconductance of nMOSFET is 315${\mu}$S/$\mu\textrm{m}$, and that of pMOSFET is 156 ${\mu}$S/$\mu\textrm{m}$. The drain saturation current of 418 ${\mu}$A/$\mu\textrm{m}$, 187${\mu}$A/$\mu\textrm{m}$ are obtained. Subthreshold swing is 85mV/dec and 88mV/dec, respectively. DIBL(Drain Induced Barrier Lowering) is below 100mV. In the device with 2000${\AA}$ thick gate polysilicon, depletion in polysilicon near the gate oxide results in an increase of equivalent gate oxide thickness and degradation of device characteristics. The gate delay time is measured to be 336psec at operation voltage of 2V.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.8
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• pp.30-37
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• 2014

In this paper, the compact model for FinFET gate resistance is developed. Based on the FinFET geometry and material, the value of the gate resistance is extracted by Y-parameter analysis using 3D device simulator, Sentaurus. By dividing the gate resistance into horizontal and vertical components, the proposed gate resistance model captures the non-linear characteristics. The proposed compact model reflects the realistic gate structure which has two different materials (Tungsten, TiN) stacked. Using the proposed model, the number of fins for the minimum gate resistance can be proposed based on the variation of gate geometrical parameters. The proposed gate resistance model is implemented in BSIM-CMG. A ring-oscillator is designed, and its delay performance is compared with and without gate resistance.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.106-115
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• 1994

This paper presents the design of a technology mapping system for optimizing delays of combinational and synchronous sequential logic circuits. The proposed system performs delay optimization for combinational logic circuits by remapping, buffering, and gate merging methods through the correct delay calculation in which the loading values are considered. To get time optimized synchronous sequential circuits, heuristic algorithms are proposed. The proposed algorithms reallocate registers by considering the critical path characteristics. Experimental results show that the proposed system produces a more optimized technology mapping for MCNC benchmarks compared with mis-II.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.2
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• pp.50-55
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• 2001

In this paper, a 8bit parity checker/generator is designed using a new gate which is proposed to implement the exclusive or(XOR) and exclusive-nor(XNOR) functions for low power consumption on transistor level. Conventional XOR/XNOR gate such as CPL, DPL and CCPL designed to reduce the power consumption has an inverter to get the full swing output signals. But this inverter consumes the major part of power and causes the time delay on CMOS circuits. Thus a new technique was adopted not utilizing inverter in the circuits. The results of simulation by Hspice shows 33% of power reduction compared with CCPL gate when A 8 bit parity checker was made with the proposed new gate using $0.8{\mu}mCMOS$ technology.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.132-135
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• 2000

We have been aware fer some time. that it is becoming harder to develop ASIC only, using the vendor wire model for the current top-down/bottom-up process. Because VDSM has a much bigger wired delay than cell delay, it is also difficult to reduce development time, as well as time-to-market, while developing several million gate ASIC's. The same is true for high frequency ASIC's with VDSM (which have larger wire delay versus cell delay). Therefore, a solution called “RTS-GDS”, using physical constraints fur SOC with timing met, is being actively discussed. This paper suggests a methodology for SOC development by utilizing a top down flow via CWLM along with discussing potential problems. This paper also provides a design flow, including physical synthesis, DFT, floor plan and CWLM, all of which are relevant to proper SOC development.