Review on RTL-GDS Methodology for VDSM Process

VDSM 공정에서 적용되는 RTL-to-GDS Methodology 검토 및 적용

  • 권오철 (삼성전자 중앙연구소 NS Lab.) ;
  • 정길임 (삼성전자 중앙연구소 NS Lab.) ;
  • 김주선 (삼성전자 중앙연구소 NS Lab.) ;
  • 배점한 (삼성전자 중앙연구소 NS Lab.)
  • Published : 2000.11.01

Abstract

We have been aware fer some time. that it is becoming harder to develop ASIC only, using the vendor wire model for the current top-down/bottom-up process. Because VDSM has a much bigger wired delay than cell delay, it is also difficult to reduce development time, as well as time-to-market, while developing several million gate ASIC's. The same is true for high frequency ASIC's with VDSM (which have larger wire delay versus cell delay). Therefore, a solution called “RTS-GDS”, using physical constraints fur SOC with timing met, is being actively discussed. This paper suggests a methodology for SOC development by utilizing a top down flow via CWLM along with discussing potential problems. This paper also provides a design flow, including physical synthesis, DFT, floor plan and CWLM, all of which are relevant to proper SOC development.

Keywords